Enhanced Carrier Localization in Near-Ultraviolet Multiple Quantum Wells Using Quaternary AlInGaN As the Well Layers

Tong Liu,Shujie Jiao,Hongwei Liang,Tianpeng Yang,Dongbo Wang,Liancheng Zhao

DOI: https://doi.org/10.1039/c5ra02460a

IF: 4.036

2015-01-01

RSC Advances

Abstract:Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers.

What problem does this paper attempt to address?

Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Li Chen,Yijun Dai,Liang Li,Jiean Jiang,Houqiang Xu,Kuang-hui Li,Tien Khee Ng,Mei Cui,Wei Guo,Haiding Sun,Jichun Ye

DOI: https://doi.org/10.1016/j.jallcom.2020.157589

IF: 6.2

2021-04-01

Journal of Alloys and Compounds

Abstract:In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths*

Xiang Li,Degang Zhao,Desheng Jiang,Jing Yang,Ping Chen,Zongshun Liu,Jianjun Zhu,Wei Liu,Xiaoguang He,Xiaojing Li,Feng Liang,Jianping Liu,Liqun Zhang,Hui Yang,Yuantao Zhang,Guotong Du,Heng Long,Mo Li

DOI: https://doi.org/10.1088/1674-1056/26/1/017805

2017-01-01

Chinese Physics B

Abstract:Four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with different well widths are grown by metal-organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.
Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Tong Liu,Shujie Jiao,Dongbo Wang,Shiyong Gao,Tianpeng Yang,Hongwei Liang,Liancheng Zhao

DOI: https://doi.org/10.1016/j.jallcom.2014.09.170

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:The structural and optical properties of In0.20Ga0.80N/AlxInyGa1 (x) N-y multiple quantum wells samples with varying Al content in barrier layers grown on sapphire substrates by metalorganic chemical vapor deposition have been investigated by means of high-resolution X-ray diffraction, Raman scattering measurements and temperature-dependent photoluminescence. Raman measurements verified the existence of In-rich clusters in ternary and quaternary layers. At 10 K and 300 K, the PL spectrum of each sample is dominated by a sharp emission peak arising from In0.20Ga0.80N well layers. The anomalous temperature-dependent S-shaped behaviors of emission energies have been observed, indicating the presence of localized states induced by the potential fluctuations in the quantum wells due to the inhomogeneous distribution of In-rich clusters. The degree of the localization effect and the transition temperatures between different temperature regions can be enhanced by increasing Al content in barrier layers. The improvement of the localized states emission has been observed at the lower energy side of band gap emission of quantum wells with increasing Al content. The origin of the deep localized states could be attributed to the larger quantum-confined Stark effect in the quantum wells with higher Al content. The recombination mechanism of carriers between band edge and localized states was proposed for interpreting of the emission characteristics. (C) 2014 Elsevier B.V. All rights reserved.
Localization Effect in Green Light Emitting Ingan/Gan Multiple Quantum Wells with Varying Well Thickness

W. Liu,D. G. Zhao,D. S. Jiang,P. Chen,Z. S. Liu,J. J. Zhu,M. Shi,D. M. Zhao,X. Li,J. P. Liu,S. M. Zhang,H. Wang,H. Yang

DOI: https://doi.org/10.1016/j.jallcom.2014.11.138

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:Green light emitting InGaN/GaN multiple-quantum-well (MQW) structures with varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD). The localization effect in these samples is studied by means of temperature-dependent photoluminescence (PL) measurements. The S-shape shift of PL peak energy with increasing temperature is observed, from which the extent of localization effect is determined quantitatively by using a band-tail model. It is found that the composition-related deep localization states dominate the light emission in thin-well MQWs, while in thick-well MQWs the shallow localization states induced by the fluctuations of InGaN well thickness dominate the luminescence efficiency. It is considered that in the thinner wells the improved emitting efficiency may partially originate from the stronger localization effect. (C) 2014 Elsevier B. V. All rights reserved.
Carrier localization mechanisms in InGaN/GaN quantum wells

D. Watson-Parris,M. J. Godfrey,P. Dawson,R. A. Oliver,M. J. Galtrey,M. J. Kappers,C. J. Humphreys

DOI: https://doi.org/10.1103/PhysRevB.83.115321

2010-06-07

Abstract:Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment.

Mesoscale and Nanoscale Physics
Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Wei Bao,Zhicheng Su,Changcheng Zheng,Jiqiang Ning,Shijie Xu

DOI: https://doi.org/10.1038/srep34545

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of "negative" thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.
Deep localization features of photoluminescence in narrow AlGaN quantum wells

Jianyang Deng,Rui Li,Ya’nan Guo,Junxi Wang,Chengxin Wang,Ziwu Ji

DOI: https://doi.org/10.1007/s11801-024-3296-x

2024-11-27

Optoelectronics Letters

Abstract:The research prepared two deep ultraviolet (DUV) AlGaN-based multiple quantum well (MQW) samples with the same Al content in the QWs but different well widths (3 nm for Sample A and 2 nm for Sample B). Photoluminescence (PL) measurements reveal that Sample A exhibits only one main PL peak across all measured temperatures, while Sample B displays one main PL peak at low temperatures and two distinct PL peaks at high temperatures. Furthermore, compared with Sample A, Sample B exhibits a more significant temperature-dependent PL peak wavelength blue shift relative to the Varshni curve, a more significant excitation power density-dependent PL peak blue shift accompanied by linewidth broadening, as well as a larger non-radiative recombination related activation energy and higher internal quantum efficiency ( IQE ). These findings can be explained by the observation that the narrower well width of Sample B induces a more pronounced effect of carrier localization than the wider well width of Sample A, due to the enhanced fluctuation in well width and reduced quantum-confined Stark effect (QCSE).

optics
Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Wei Liu,De Gang Zhao,De Sheng Jiang,Ping Chen,Zong Shun Liu,Jian Jun Zhu,Xiang Li,Ming Shi,Dan Mei Zhao,Jian Ping Liu,Shu Ming Zhang,Hui Wang,Hui Yang

DOI: https://doi.org/10.1116/1.4927388

2015-01-01

Abstract:The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.
Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Hailiang Dong,Tiantian Jia,Jian Liang,Aiqin Zhang,Zhigang Jia,Wei Jia,Xuguang Liu,Guoqiang Li,Yucheng Wu,Bingshe Xu

DOI: https://doi.org/10.1016/j.optlastec.2020.106309

2020-09-01

Abstract:Band alignment of InGaN/GaN multiple quantum wells (MQW) light-emitting diode was investigated by regulating the widths of well and barrier. Novel structure of InGaN/GaN MQW was designed with wider well and narrower barrier with respect to conventional InGaN/GaN MQW with the layer thickness of 2.5/12.5 nm, respectively. The analyses of band alignment, and hole and electron concentrations within the MQW zone show that the novel MQW structure could improve hole transport and block electron leakage owing to the increased potential barrier for electron and the decreased potential barrier for hole in MQW zone, as can be confirmed by decreased electron density and increased hole density. Both the intensity of electroluminescence and internal quantum efficiency for novel MQW are enhanced by increasing radiative recombination. Moreover, it was found that non-radiative recombination current density mainly stems from Auger recombination current density that mainly depends on excess electron. The novel MQW structure reduces built-in field at well/barrier interface owing to increased hole injection. This work provides an effective approach for achieving high performance for InGaN/GaN LED by regulating band offset.

optics,physics, applied
Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Kunzi Liu,Li Chen,Tian Luo,Zihui Zhao,Ping Ouyang,Jiaxin Zhang,Qiushuang Chen,Biao Zhou,Shengli Qi,Houqiang Xu,Zhenhai Yang,Wei Guo,Jichun Ye

DOI: https://doi.org/10.1063/5.0131013

IF: 4

2022-12-16

Applied Physics Letters

Abstract:The distribution of electrons and holes inside the multiple-quantum wells is highly non-uniform for AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) due to both insufficient hole injection and excessive electron leakage. A key factor to improve the quantum efficiency of DUV-LED is to reduce the proportion of hot electrons in n-AlGaN through carrier deceleration. In this work, we propose a structure design by introducing an additional Al 0.55 Ga 0.45 N/Al 0.42 Ga 0.58 N superlattice electron restriction layer between the active region and n-AlGaN for electron deceleration. The superlattice structure not only reduces the mobility of the electrons, which helps to balance the distribution of carriers in the active region, thus, promoting radiative recombination, but also facilitates the lateral transport of the electrons, thus, reducing the current crowding effect through band engineering. Low temperature electroluminescence analysis reveals that the improvement of quantum efficiency is due to both enhanced carrier injection efficiency and radiation recombination efficiency in the active region.

physics, applied
Growth and Characterization of Quaternary AlInGaN Multiple Quantum Wells with Different Aluminum Composition

Tong Liu,Shujie Jiao,Dongbo Wang,Liancheng Zhao,Tianpeng Yang,Zhiguo Xiao

DOI: https://doi.org/10.1016/j.apsusc.2014.02.034

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:Quaternary AlInGaN multiple quantum well structures with (Al)InGaN wells were grown on sapphire substrates by metalorganic chemical vapor deposition. The structural and optical properties of the samples were investigated by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL). The shift of satellite peaks in HRXRD shows the fact that the Al composition increases and In composition decreases with increasing Al precursor flow rate during the growth process of quaternary AlInGaN wells or barriers. The PL intensity could be enhanced by optimizing Al composition in the barrier layers and further improved by adding Al atoms into InGaN wells due to the reduction in the quantum-confined Stark effect, even if the surface morphology is degraded when using AlInGaN as well layers observed from atomic force microscopy images. The reasons for the improvement are attributed to the reduced polarization mismatch and the enhanced carrier localization effect induced by Al composition increasing. (C) 2014 Elsevier B.V. All rights reserved.
Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Meng Cao,Huizhen Wu,Yanfeng Lao,Cheng Liu,Zhengsheng Xie

DOI: https://doi.org/10.3321/j.issn:0253-2239.2007.03.022

2007-01-01

Acta Optica Sinica

Abstract:To investigate the influence of dry etching on strained multiple quantum wells (SMQWs),we etch the cap layer of metalorganic chemical vapor phase deposition (MOCVD) grown InGaN/AlGaN SMQWs about 95 nm by inductively coupled plasma (ICP).Photoluminescence (PL) measurements show that,the photoluminescence intensity of the quantum wells is enhanced about 3 times after dry etching.The surface of the quantum well becomes fluctuant,the degree of roughness becomes larger,and it allows the photons generated within the quantum wells to escape surface more easily by multiple scattering at the rough surface.The theoretic calculation result shows that the pattern change of the quantum well surface causes the enhancement of the photoluminescence intensity about 1.3 times.On the other side,because the inductively coupled plasma power is small,the damage depth almost cannot reach the well layer,but the tunneling of Ar~+ inside the quantum well structure may bring new luminescence centers,and enhances the photoluminescence intensity.
Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Zilan Wang,Lai Wang,Yuchen Xing,Di Yang,Jiadong Yu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1021/acsphotonics.7b00516

IF: 7

2017-01-01

ACS Photonics

Abstract:Due to structural imperfection and indium content fluctuation, carriers' localization in an InGaN-based active layer can produce efficient luminescence and unusual thermodynamic behaviors. Spectral features associated with localization, such as the "S-shaped" shift of peak energy in temperature-dependent photoluminescence (PL) and the nonexponential decay in time-resolved photoluminescence (TRPL), have not yet formed a comprehensive physical interpretation. In this work, the thermal evolution of carriers' decay process is examined by spectroscopic approaches in high-efficiency InGaN/GaN multiple quantum well (MQW) samples. Based on the localized-state ensemble model, the peak shift in temperature-dependent PL is excellently fitted by the "red" and "blue" localization centers, which perfectly match with the fast and slow processes resolved from TRPL using biexponential model, All variations in emission peak, line shape, filling position, and lifetime with temperature are elucidated by carriers redistributing between two kinds of localization centers according to the density of states. Meanwhile, the impact of substrate and underlying layers in MQW samples has also been compared. Through such systematic analysis, the dynamics of carriers in MQWs have been quantitatively discussed, and a comprehensive understanding on the localization-induced luminescence mechanism is achieved.
High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Yuan Li,Zhiheng Xing,Yulin Zheng,Xin Tang,Wentong Xie,Xiaofeng Chen,Wenliang Wang,Guoqiang Li

DOI: https://doi.org/10.1039/c9tc06138j

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.
The Investigation on Carrier Distribution in InGaN/GaN Multiple Quantum Well Layers

J. H. Zhu,S. M. Zhang,H. Wang,D. G. Zhao,J. J. Zhu,Z. S. Liu,D. S. Jiang,Y. X. Qiu,H. Yang

DOI: https://doi.org/10.1063/1.3587176

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:The carrier distribution and recombination dynamics of InGaN/GaN multiple quantum well (MQW) light-emitting diode structure are investigated. Two emission peaks were observed in the low temperature photoluminescence spectra of an InGaN/GaN MQW structure, but only one peak was observed in the electroluminescence (EL) spectra. Combined with the spatially resolved cathodoluminescence (CL) measurements, it is found that the electrically injected carrier distribution is governed by hole transport and diffusion in InGaN/GaN MQW structure due to the much lower mobility of hole. And the electron and hole recombination of EL occurs predominantly in the QWs that are located closer to the p-GaN layer.
Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Xuanqi Huang,Dongying Li,Po-Yi Su,Houqiang Fu,Hong Chen,Chen Yang,Jingan Zhou,Xin Qi,Tsung-Han Yang,Jossue Montes,Xuguang Deng,Kai Fu,Steven P. DenBaars,Shuji Nakamura,Fernando A. Ponce,Cun-Zheng Ning,Yuji Zhao

DOI: https://doi.org/10.1016/j.nanoen.2020.105013

IF: 17.6

2020-10-01

Nano Energy

Abstract:Nonpolar InGaN/GaN quantum wells (QWs) have gained significance for efficient light emitting since it eliminates polarization-related effects and allows for higher radiative capability. Although much progress has been made in analyzing carrier localization effects at cryogenic temperatures, carrier dynamics at above room temperatures are still not well understood. In this work, we have observed and explored anomalous carrier dynamics of two nonpolar m-plane InGaN/GaN QWs at high temperatures by combining scanning transmission electron microscopy (STEM) and photophysical characterization. Both experimental and theoretical results suggest that carrier lifetime in both samples increases with temperature in a certain range of temperature. However, the reduced integrity and uniformity of QWs make carriers more prone to the nonradiative Shockley-Reed-Hall recombination as temperature rises. Moreover, both acoustic and optical phonon scatterings dominate from 300 to 600 K through the analysis on the evolution of photoluminescence spectra. Overall, these detailed studies provide insights into approaches to evaluate carrier dynamics at elevated temperatures and improve emitting performance to further push the practical efficiency limit.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Y. B. Tao,Z. Z. Chen,T. J. Yu,Y. Yin,X. N. Kang,Z. J. Yang,G. Z. Ran,G. Y. Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2010.10.031

IF: 1.8

2011-01-01

Journal of Crystal Growth

Abstract:InGaN/GaN quantum wells (QWs) with symmetrical ultra thin (about 0.5nm) low temperature GaN (LT-GaN) layers bounding each InGaN layer were grown by metal-organic vapor phase epitaxy (MOVPE). From the high resolution X-ray diffraction (HR-XRD) measurement, it showed improved well-barrier interface abruptness compared to the reference MQWs without the LT-GaN layers. In addition, the V-defect density and surface roughness were reduced, especially with the depth of V-defect as low as 0.7nm. Based on the temperature dependence photoluminescence (TDPL) experiments, the internal quantum efficiency (IQE) was increased from 21.2% to 30.1% by inserting the LT-GaN layers. The carrier lifetime obtained from room temperature time resolved photoluminescence (TRPL) measurement was 7.95ns, which was longer than 5.34ns for reference MQWs. These results indicated that these additional symmetrical thin LT-GaN layers enhanced the mobility of indium and gallium atoms as well as suppressed the indium desorption for growth high quality InGaN layers and in turn improved its structural and luminescence properties.
Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Wang Baozhu,Wang Xiaoliang,Wen Huanming,Wu Ruihong,Hu Guoxin,Ran Junxue,Xiao Hongling

DOI: https://doi.org/10.1117/12.742512

2007-01-01

Abstract:InGaN/GaN multiple quantum wells (MQWs) structure for ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition (MOCVD). The High resolution x-ray diffraction (HRXRD), atomic-force microscopy (AFM) and photoluminescence (PL) are used to characterize the structural and optical prosperities of MQWs, respectively. HRXRD shows multiple satellite peaks to 3rd order indicates the high quality of InGaN/GaN layer interface. AFM measurement shows that there are some spiral growth hillocks and 3D nanostructures on the MQWs surface. They are related with the surface kinetics or thermodynamics of InGaN growth. Temperature-dependent PL results show that there exists a clear excition-localization effect in the InGaN/GaN MQWs. The fitted σvalue of InGaN/GaN MQWs is around 8meV. The emission peak was almost unchanged with the increase PL excitation power. Those results indicate there is almost none piezoelectric field-induced quantum-confined stark effect in the InGaN/GaN MQWs due to the low In content and thin quantum well thickness.
Performance Improvement of Ultraviolet-a Multiple Quantum Wells Using a Vertical Oriented Nanoporous GaN Underlayer.

Xilin Su,Yufeng Li,Minyan Zhang,Peng Hu,Zhenhuan Tian,Maofeng Guo,Ye Zhang,Feng Yun

DOI: https://doi.org/10.1088/1361-6528/aba6b0

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Well-aligned, lateral and vertical oriented nanoporous GaN was fabricated using the electrochemical etching procedure and its influence on the optical characteristics of ultraviolet-A multiple quantum well (MQW) structure was investigated. We used a MQW structure with a V-defect and n-Al0.1Ga0.9 N layer, which greatly improved the uniformity of vertical electrochemical etching. Compared to the as-grown MQW structure, the lateral and vertical oriented nanoporous MQW structures have 3.8-fold and 8.1-fold photoluminescence intensity enhancement and the full width at half maximum has been narrowed from 18.4 nm to 7.9 nm and 2.8 nm, respectively. The vertical oriented nanoporous MQW structure has a rectangular far-field emission pattern with uniform forward light distribution and the view angle of 85% intensity is 50°. This study provides an effective method for improving the light output and controlling the emission angle of GaN based light emitting devices, as well as a method for preparing well-aligned nanopores in semiconductors.
Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Wei Guo,Haiding Sun,Bruno Torre,Junmei Li,Moheb Sheikhi,Jiean Jiang,Hongwei Li,Shiping Guo,Kuang-Hui Li,Ronghui Lin,Andrea Giugni,Enzo Di Fabrizio,Xiaohang Li,Jichun Ye

DOI: https://doi.org/10.1002/adfm.201802395

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:Aluminum-gallium-nitride alloys (AlxGa1-xN, 0 <= x <= 1) can emit light covering the ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full promise to replace the toxic and fragile mercury UV lamps due to their low efficiencies. This study demonstrates a promising approach to enhancing the luminescence efficiency of AlGaN multiple quantum wells (MQWs) via the introduction of a lateral-polarity structure (LPS) comprising both III and N-polar domains. The enhanced luminescence in LPS is attributed to the surface roughening, and compositional inhomogeneities in the N-polar domain. The space-resolved internal quantum efficiency (IQE) mapping shows a higher relative IQE in N-polar domains and near inversion domain boundaries, providing strong evidence of enhanced radiative recombination efficiency in the LPS. These experimental observations are in good agreement with the theoretical calculations, where both lateral and vertical band diagrams are investigated. This work suggests that the introduction of the LPS in AlGaN-based MQWs can provide unprecedented tunability in achieving higher luminescence performance in the development of solid state light sources.

Enhanced Carrier Localization in Near-Ultraviolet Multiple Quantum Wells Using Quaternary AlInGaN As the Well Layers

Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths*

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Localization Effect in Green Light Emitting Ingan/Gan Multiple Quantum Wells with Varying Well Thickness

Carrier localization mechanisms in InGaN/GaN quantum wells

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Deep localization features of photoluminescence in narrow AlGaN quantum wells

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Growth and Characterization of Quaternary AlInGaN Multiple Quantum Wells with Different Aluminum Composition

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

The Investigation on Carrier Distribution in InGaN/GaN Multiple Quantum Well Layers

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Performance Improvement of Ultraviolet-a Multiple Quantum Wells Using a Vertical Oriented Nanoporous GaN Underlayer.

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence