Abstract:Low temperature preparable p-type transparent conductors are indispensable for flexible transparent electronics. The current research interest in p-type transparent conductors is mainly focused on wide-band gap copper-based oxides. However, the performance of these oxides is generally inferior to their n-type counterparts, and their high preparation temperature is unfavorable for flexible electronic applications. CuI is a p-type transparent conductor that can be prepared at low temperatures and possesses properties comparable to n-type transparent conductors. The commonly used method for preparing CuI films is iodination of Cu films. However, CuI films produced by this method have a frosted-glass-like appearance, the electrical properties are difficult to be regulated, thus is not suitable for electronic devices. In this paper, we have successfully developed CuI−Cu 2 O composite films with enhanced surface morphology and electronic properties at room temperature. Cu 2 O inhibits the movement of CuI grain boundaries during the iodination process, resulting in a reduction of CuI grain size and a polycrystalline organization with a smoother surface. Due to the increased concentration of grain boundaries in the films and the charge redistribution between Cu 2 O and CuI, the hole concentration in the films decreases and the hole mobility increases. The conductivity of the films increases and then decreases as the Cu 2 O content rises. For CuI−Cu 2 O films with optimized Cu 2 O composition, the transparency in the visible region is 70-80%, the hole concentration is 6.16×1018 cm -3 , the hole mobility is 25.40 cm 2 V -1 s -1 , and the conductivity is 18.57 S cm -1 . After 6 months of aging, the electrical properties of CuI−Cu 2 O films are more stable than those of pure CuI films. These findings will accelerate the wide application of CuI films in transparent electronics.

Structural, Optical and Electrical Properties of Transparent Conducting Cuino2 Thin Films Prepared by Rf Sputtering

Optical and Wetting Properties of CuAlO2 Films Prepared by Radio Frequency Magnetron Sputtering

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Review in optoelectronic properties of p-type CuCrO2 transparent conductive films

Fabrication and characterization of CuInS 2 films by chemical bath deposition in acid conditions

Structural and optical properties of CuInS2 thin films prepared by magnetron sputtering and sulfurization heat treatment

Deposition and Optical Characterization of Sputter Deposited p-Type Delafossite CuGaO2 Thin Films Using Cu2O and Ga2O3 Targets

Preparation and Properties of CuInS2 Thin Film Deposited by Single-Source Thermal Evaporation

Transparent conductive F-doped SnO 2 films prepared by RF reactive magnetron sputtering at low substrate temperature

Preparation of Cualo2 Nanocrystalline Transparent Thin Films with High Conductivity

Optical Properties of P-Type Cualo2 Thin Film Grown by Rf Magnetron Sputtering

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Electrodeposition and Optical Properties of Highly Oriented Γ-Cui Thin Films

P-type Tin–indium Oxide Films Prepared by Thermal Oxidation of Metallic InSn Alloy Films

Electrical and Optical Properties of In₂O₃ Thin Films Deposited on Sapphire Substrate

Effect of annealing temperature on structural, optoelectronic properties and interband transitions of CuCrO2 nanocrystalline films prepared by the sol–gel method

Investigation On Structural, Electrical And Optical Properties Of Tungsten-Doped Tin Oxide Thin Films

Structural and optical properties of CdS thin films prepared by RF sputtering

Trimethoprim-sulphamethoxazole and metronidazole as prophylaxis in colorectal surgery: a study of bioavailability after an oral single dose.

Structure and Transparent Conductive Properties of SnO2 and SnO2:F Films Deposited by RF Reactive Magnetron Sputtering

High-Performance p-Type Transparent Conducting CuI−Cu2O Thin Films with Enhanced Hole Mobility, Surface, and Stability