Abstract:Among the many ferroelectric film fabrication techniques, the sol-gel process provides high purity, large deposition area and easy composition control. However, the thickness limit of a crack-free single-layer film is about 0.2 mum and about 10 times of coating and thermal treatment processing are needed to deposit 1.5 mum-thick films. In laser ablation, the deposition rate is expected to be 1-2 mum/h, but the film quality is lower than that deposited by the sol-gel method. In this work, the hybrid process, involving the sol-gel method and laser ablation, was used to make 1.65 mum-thick lead zirconate titanate (PZT) films with well-crystallized perovskite phase at the (111) orientation. We deposited (111)-oriented 0.15 mum-thick PZT film on Pt/Ti/SiO2/Si substrates using the sol-gel method and then deposited 1.5 mum-thick PZT films by laser ablation. The remanent polarization of 28.6 muC/cm(2) and the coercive field of 58.0 kV/cm were obtained while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The piezoelectric coefficient d(31) was also investigated and found to be 16.65 +/- 4 pC/N. In the application, a micromirror actuated by the hybrid PZT films was designed and fabricated successfully by a three-mask lithography process. The scanning angle of 6 2 degrees was demonstrated, while resonating with 5 V-p.p at the resonance frequency (1975 Hz).

Low-temperature processing of lead zirconate titanate thin films by 28 GHz microwave irradiation for MEMS application

Rapid Crystallization of Sol–Gel-Deposited Lead Zirconate Titanate Thin Films by 2.45 GHz Microwave Irradiation

Low-Temperature Processing of Pzt Thin Films by 2.45 Ghz Microwave Heating

Crystallization of Ferroelectric Lead Zirconate Titanate Thin Films by Microwave Annealing at Low Temperatures

Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45 GHz Microwave Irradiation

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Low Temperature Preparation of Sol-Gel PZT Thin Film Annealed at 160°C by Hydrothermal Method

Preparation and characterization of lead zirconate titanate thick films prepared by chemical solution deposition for MEMS applications

Preparation of Pb(Zr0.52TiO0.48)O3 Thin Films at Low-Temperature of Less Than 400°C by Hydrothermal Treatment Following Sol-Gel Deposition

Excellent Uniformity and Properties of Micro-Meter Thick Lead Zirconate Titanate Coatings with Rapid Thermal Annealing

Low Temperature Preparation Of Sol-Gel Pzt Thin Film Annealed At 160 Degrees C By Hydrothermal Method

Low temperature fabrication of PbZr0.44Ti0.56O3 thin films

Fabrication of Pzt Thin Films with Tiox Buffer Layers by Rf Magnetron Sputtering

A new and rapid heat-treatment process for fabricating lead zirconate titanate thin film

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Growth and ferroelectric properties of sol-gel derived Pb(Zr,Ti)O3 using inorganic zirconium precursor

Fabrication of (100) Orientated PZT Thin Films for MEMS Applications

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Modification of Microstructure on PZT Films for Ultrahigh Frequency Transducer.

Polymer-Assisted Mod Preparation of Pbzr0.52ti0.48o3 Thick Films for Mems Applications

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation