Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

The growth behavior of graphene on iron-trichloride-solution-soaked copper substrates in a low pressure chemical vapor deposition

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Density Functional Theory and Molecular Dynamics Study on the Growth of Graphene by Chemical Vapor Deposition on Copper Substrate

The effect of catalytic copper pretreatments on CVD graphene growth at different stages

The Efficiency Study of Graphene Synthesis on Copper Substrate via Chemical Vapor Deposition Method with Methanol Precursor

Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

Copper-Containing Carbon Feedstock for Growing Superclean Graphene

Low-Temperature Chemical Vapor Deposition Growth Of Graphene From Toluene On Electropolished Copper Foils

Structural Evolution and Growth Mechanism of Graphene Domains on Copper Foil by Ambient Pressure Chemical Vapor Deposition

Deposition and Growth Mechanism of Graphene on Copper Crystal Surface Based on Molecular Dynamics Simulation

Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Suppression of Graphene Nucleation by Plasma Treatment of Cu Foil for the Rapid Growth of Large-Size Single-Crystal Graphene

The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper.

Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

Effect of Chemical Treatment and Thermal Annealing in N2 Atmosphere on Copper Foil Surface for Graphene Growth by Direct-Liquid-Injection Chemical Vapor Deposition Process

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Controllable Growth of Millimeter-Size Graphene Domains on Cufoil