Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Resistance Non-volatile Memory — RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Resistance Switching for RRAM Applications.

Resistance Switching Memory Effect in Transition Metal Oxide Thin Films

An Overview of Resistive Random Access Memory Devices

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

The storage mechanism of resisitive random access

Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

Investigation of Self-Selective RRAM Based on V/ITO Structure with Rapid Thermal Annealed ITO for Synapse Emulation

A Resistive Device with Electrolyte As Active Electrode

Resistive Switching Mechanisms for Nonvolatile Resistive Random Access Memory Based on I-V Characteristic

Review of Electrical Stimulus Methods Ofin Situtransmission Electron Microscope to Study Resistive Random Access Memory

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Origin of Negative Resistance in Anion Migration Controlled Resistive Memory