Is Cu3sbse3 A Promising Thermoelectric Material?

Tian-Ran Wei,Chao-Feng Wu,Wei Sun,Yu Pan,Jing-Feng Li

DOI: https://doi.org/10.1039/c5ra03953c

IF: 4.036

2015-01-01

RSC Advances

Abstract:Cu3SbSe3 characterized by ultralow thermal conductivity is a wide-gap, nondegenerate semiconductor with a large effective mass and deformation potential, yielding zTmax = 0.25.

What problem does this paper attempt to address?

Is Cu₃SbSe₃ a Promising Thermoelectric Material?

Tian‐Ran Wei,Chaofeng Wu,Wenzhao Sun,Yu Pan,Jing‐Feng Li

IF: 4.036

2015-01-01

RSC Advances

Abstract:Cu₃SbSe₃, a compound with an ultralow thermal conductivity, has been predicted as a promising thermoelectric material, but relevant experimental results are inadequate. In this work we studied the high-temperature thermoelectric properties of this ternary chalcogenide. An extremely low thermal conductivity was observed and a glass-like behavior was seen above an order–disorder transition. Possible mechanisms causing such an ultralow thermal conductivity were discussed concerning the disorder of Cu atoms. With a large band gap of ∼0.95 eV obtained by an optical absorption edge measurement, Cu₃SbSe₃ was found to be a nondegenerate p-type semiconductor, different from previous reports. A maximum zT of ∼0.25 was obtained at 650 K for Cu₃SbSe₃, which is much higher than the previously reported values, but this compound was considered inferior to Cu₃SbSe₄ in its thermoelectric performance by comparing some key physical parameters.
Unlocking the Potential of Cu3SbSe3: Ultralow Thermal Conductivity and Enhanced Thermoelectric Performance

Kivanc Saglik,Jinfeng Dong,Danwei Zhang,Thiri Zaw Hsu,Solco Samantha Faye Duran,Jing Cao,Qiang Zhu,Rong Ji,Seng Kai Wong,Siew Lang Teo,Feng Xia Wei,Qingyu Yan,Ady Suwardi

DOI: https://doi.org/10.1016/j.jssc.2024.124642

IF: 3.3

2024-01-01

Journal of Solid State Chemistry

Abstract:Cu3SbSe3, with its ultralow thermal conductivity and Earth -abundant elements, has emerged as a promising thermoelectric material. However, synthesizing its pure phase and achieving effective doping have proven to be challenging. In this study, we present our findings on the investigation of thermoelectric properties of stoichiometric and off-stoichiometric Cu3SbSe3 compositions along with various doping strategies. Our results demonstrate that samples with non-stoichiometric compositions and Bi doping further reduces the lattice thermal conductivity of 0.16 W/mK. The consistently moderate Seebeck coefficient leads to a zT value of 0.25 at 650 K across all cation -deficient samples. Furthermore, we observed that 5% Bi doping further enhances the zT value to 0.35, representing a 52% improvement over pristine Cu3SbSe3. We believe that the compositional insensitivity of zT and the enhanced performance achieved through Bi doping offer new opportunities for exploring materials with ultra -low thermal conductivity in the field of thermoelectrics.
Are Cu2Te‐Based Compounds Excellent Thermoelectric Materials?

Kunpeng Zhao,Ke Liu,Zhongmou Yue,Yancheng Wang,Qingfeng Song,Jian Li,Mengjia Guan,Qing Xu,Pengfei Qiu,Hong Zhu,Lidong Chen,Xun Shi

DOI: https://doi.org/10.1002/adma.201903480

IF: 29.4

2019-01-01

Advanced Materials

Abstract:AbstractMost of the state‐of‐the‐art thermoelectric (TE) materials exhibit high crystal symmetry, multiple valleys near the Fermi level, heavy constituent elements with small electronegativity differences, or complex crystal structure. Typically, such general features have been well observed in those well‐known TE materials such as Bi2X3‐, SnX‐, and PbX‐based compounds (X = S, Se, and Te). The performance is usually high in the materials with heavy constituent elements such as Te and Se, but it is low for light constituent elements such as S. However, there is a great abnormality in Cu2X‐based compounds in which Cu2Te has much lower TE figure of merit (zT) than Cu2S and Cu2Se. It is demonstrated that the Cu2Te‐based compounds are also excellent TE materials if Cu deficiency is sufficiently suppressed. By introducing Ag2Te into Cu2Te, the carrier concentration is substantially reduced to significantly improve the zT with a record‐high value of 1.8, 323% improvement over Cu2Te and outperforms any other Cu2Te‐based materials. The single parabolic band model is used to further prove that all Cu2X‐based compounds are excellent TE materials. Such finding makes Cu2X‐based compounds the only type of material composed of three sequent main group elements that all possess very high zT s above 1.5.
Facile Synthesis of Monodisperse Cu3SbSe4 Nanoparticles and Thermoelectric Performance of Cu3SbSe4 Nanoparticle-Based Materials

Yimin Wu,Xvsheng Qiao,Xianping Fan,Xianghua Zhang,Shuo Cui,Jun Wan

DOI: https://doi.org/10.1007/s11051-015-3094-2

IF: 2.533

2015-01-01

Journal of Nanoparticle Research

Abstract:In this study, large-scale synthesis of Cu3SbSe4 and Cu3Sb0.98Sn0.02Se4 nanoparticles with a narrow size distribution was achieved through a rapid-injection route. These nanoparticles showed a monodisperse and quasi-spherical morphology. The Cu3SbSe4 and Cu3Sb0.98Sn0.02Se4 nanoparticle-based bulk materials were then prepared by hot-pressed sinter of the nanoparticles, and their thermoelectric performances were systematically studied. Due to the reduced lattice thermal conductivity from enhanced phonon scattering at the grain interfaces of the bulk materials, the maximum ZT value of the Cu3Sb0.98Sn0.02Se4 bulk materials reached 0.50 at 575 K.
CsCu5S3: Promising Thermoelectric Material with Enhanced Phase Transition Temperature.

Ni Ma,Fei Jia,Lin Xiong,Ling Chen,Yan-Yan Li,Li-Ming Wu

DOI: https://doi.org/10.1021/acs.inorgchem.8b02919

IF: 4.6

2019-01-01

Inorganic Chemistry

Abstract:Cu2S, featuring low cost, nontoxicity, and earth abundance, has been recently recognized as a high efficiency thermoelectric (TE) material. However, before reaching the maximum of the figure of merit ( ZT), Cu2S undergoes three phase transformations starting at 370 K, which give rise to severe problems, such as possible decomposition and low reliability. Herein, we discover CsCu5S3 with phase transformation at 823 K, which is significantly higher than the 370 K value of Cu2S. Single crystal diffraction data reveal that its two phases are constructed by the same Cu4S4 columnar building unit via propagating either at the opposite sides into a layered o-CsCu5S3, or at the four apexes into a 3D t-CsCu5S3, respectively. Interestingly, the o-to- t transformation is quick, but the reverse one is relatively slow. Theoretical studies reveal that the Cu4S4 column exhibits not only the most condensed atomic aggregation ( Dcolumn) but also the lightest effective mass ( m*), along which higher σ is realized. More interestingly, both phases exhibit remarkable ZT enhancements, 0.46 at 800 K for o-CsCu5S3, and 0.56 at 875 K for t-CsCu5S3, which are 170% and 175% that of Cu2S at the same temperature.
Β‐cscu5se3: A Promising Thermoelectric Material Going Beyond Photovoltaic Application

Yanyan Chen,Yupeng Shen,Xiaoyin Li,Jie Sun,Qian Wang

DOI: https://doi.org/10.1002/adts.202000169

2020-01-01

Advanced Theory and Simulations

Abstract:Copper chalcogenides have attracted much attention in recent years because of their promising applications in thermoelectric conversion. However, many of them suffer from phase transformation at low temperature. Motivated by the synthesis of bulk β‐CsCu5Se3 with high phase transformation temperature of 923 K for photovoltaic applications, its thermoelectric properties using first‐principles calculations combined with Boltzmann transport theory are systematically studied. The results show that β‐CsCu5Se3 possesses ultralow lattice thermal conductivities of 0.24, 0.41, and 0.25 W mK−1 along the x, y, and z directions at room temperature, respectively, which are further reduced to 0.09, 0.15, and 0.09 W mK−1 at 800 K. A detailed analysis of its group velocity, three phonon scattering rate, Grüneisen parameter and three phonon phase space reveals that the weak harmonicity and strong phonon anharmonic scattering are responsible for the ultralow lattice thermal conductivity, leading to a high figure of merit (ZT) value of 1.81 along the y direction at 800 K, which is three times higher than that of known thermoelectric materials o‐CsCu5S3 (0.46 at 800 K) and t‐CsCu5S3 (0.56 at 875 K). This study suggests that β‐CsCu5Se3 is a multifunctional material promising for both photovoltaic and thermoelectric applications.
Superconductivity in efficient thermoelectric Cu$_3$Sb$_{0.98}$Al$_{0.02}$Se$_4$

Xiao-Miao Zhao,Yong-Hui Zhou,Qiao-Wei Huang,Viktor V. Struzhkin,Ho-Kwang Mao,Alexander G. Gavriliuk,Xiao-Ying Qin,Di Li,Xi-Yu Li,Yuan-Yue Li,Xiao-Jia Chen

DOI: https://doi.org/10.48550/arXiv.1501.03382

2015-01-14

Abstract:Both superconductivity and thermoelectricity offer promising prospects for daily energy efficiency applications. The advancements of thermoelectric materials have led to the huge improvement of the thermoelectric figure of merit in the past decade. By applying pressure on a highly efficient thermoelectric material Cu$_{3}$Sb$_{0.98}$Al$_{0.02}$Se$_4$, we achieve dome-shape superconductivity developing at around 8.5 GPa but having a maximum critical temperature of 3.2 K at pressure of 12.7 GPa. The novel superconductor is realized through the first-order structural transformation from its initial phase to an orthorhombic one. The superconducting phase is determined in the ultimate formation of the Cu-Al-Sb-Se alloy.

Superconductivity,Materials Science
Realizing the Ultralow Lattice Thermal Conductivity of Cu3SbSe4 Compound via Sulfur Alloying Effect

Lijun Zhao,Haiwei Han,Zhengping Lu,Jian Yang,Xinmeng Wu,Bangzhi Ge,Lihua Yu,Zhongqi Shi,Abdulnasser M Karami,Songtao Dong,Shahid Hussain,Guanjun Qiao,Junhua Xu,Abdulnasser M. Karami

DOI: https://doi.org/10.3390/nano13192730

IF: 5.3

2023-10-08

Nanomaterials

Abstract:Cu3SbSe4 is a potential p-type thermoelectric material, distinguished by its earth-abundant, inexpensive, innocuous, and environmentally friendly components. Nonetheless, the thermoelectric performance is poor and remains subpar. Herein, the electrical and thermal transport properties of Cu3SbSe4 were synergistically optimized by S alloying. Firstly, S alloying widened the band gap, effectively alleviating the bipolar effect. Additionally, the substitution of S in the lattice significantly increased the carrier effective mass, leading to a large Seebeck coefficient of ~730 μVK−1. Moreover, S alloying yielded point defect and Umklapp scattering to significantly depress the lattice thermal conductivity, and thus brought about an ultralow κlat ~0.50 Wm−1K−1 at 673 K in the solid solution. Consequently, multiple effects induced by S alloying enhanced the thermoelectric performance of the Cu3SbSe4-Cu3SbS4 solid solution, resulting in a maximum ZT value of ~0.72 at 673 K for the Cu3SbSe2.8S1.2 sample, which was ~44% higher than that of pristine Cu3SbSe4. This work offers direction on improving the comprehensive TE in solid solutions via elemental alloying.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
High Thermoelectric Performance of Cu 3 SbSe 4 Obtained by Synergistic Modulation of Power Factor and Thermal Conductivity

Li Ai,Hongwei Ming,Tao Chen,Ke Chen,Jinhua Zhang,Jian Zhang,Xiaoying Qin,Di Li

DOI: https://doi.org/10.1021/acsaem.2c03006

IF: 6.4

2022-10-01

ACS Applied Energy Materials

Abstract:In this work, Cu3– y Ag y Sb1–x Ge x Se4 (x = 0, 0.04, 0.06, 0.08, 0.10, 0.12; y = 0, 0.1, 0.2, 0.3, 0.4) is fabricated using a high-temperature melting process, and the thermoelectric properties are investigated in the temperature range of 300–700 K. As a result, a remarkable improvement in thermoelectric performance of Cu-based ternary thermoelectric materials is achieved here. Ge doping increases the carrier concentration leading to a decrease in electrical resistivity; Ag alloying can reduce thermal conductivity significantly and enhance the power factor. Consequently, a maximum figure of merit, 0.95, is obtained for Cu2.7Ag0.3Sb0.94Ge0.06Se4 and Cu2.6Ag0.4Sb0.94Ge0.06Se4 at 700 K, which is higher than most reported Cu3SbSe4-based systems.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Towards a new chalcopyrite high-performance thermoelectric semiconductor Cu3InSnSe5 by entropy engineering

Wang Li,Yubo Luo,Zheng Ma,Tian Xu,Yingchao Wei,Yang Tao,Yongxin Qian,Chengjun Li,Xianwei Zeng,Qinghui Jiang,Junyou Yang

DOI: https://doi.org/10.1016/j.actamat.2023.119259

IF: 9.4

2023-10-01

Acta Materialia

Abstract:A new semiconductor Cu3InSnSe5 is introduced by entropy driven alloying equimolar ratio CuInSe2 and Cu2SnSe3. Cu3InSnSe5 is a p-type semiconductor (Eg ∼0.41 eV) and crystallizes in the chalcopyrite structure with I4_2 m space group. Our density functional theory calculations show that Cu3InSnSe5 exhibits an electronic band structure with multiple valance band peaks, rendering a large density of state effective mass m* of 1.8 me. Therefore, Cu3InSnSe5 has a high power factor of 7.59 μW cm−1 K−2 at 773 K. In addition, Cu3InSnSe5 also has a low lattice thermal conductivity (0.34 W m−1 K−1 at 773 K) owing to its severe lattice distortion arose by entropy enhancement. As a result, the figure of merit reaches as high as 1.08 at 773 K for Cu3InSnSe5. Furthermore, electronic band engineering is adopted to enhance the carrier concentration and m* of Cu3InSnSe5 via the substitution of In for Sn, resulting in ∼28% enhancement in power factor, ∼21% increment in ZT (1.31 at 773 K), and ∼10% enhancement in average ZT (∼ 0.67 at 473 – 773 K) for Cu3In1.01Sn0.99Se5 compared with Cu3InSnSe5 itself. Our work shows Cu3InSnSe5 should be a promising candidate for thermoelectric power generation at medium temperature.

materials science, multidisciplinary,metallurgy & metallurgical engineering
CuPbBi5S9 thermoelectric material with an intrinsic low thermal conductivity: Synthesis and properties

Hao Liang,Jun Guo,Yun-Xuan Zhou,Zi-Yuan Wang,Jing Feng,Zhen-Hua Ge

DOI: https://doi.org/10.1016/j.jmat.2021.03.016

IF: 8.589

2022-01-01

Journal of Materiomics

Abstract:CuPbBi5S9 compounds have been investigated as gladite for years. However, there have been no significant studies on their physical and chemical properties. This work demonstrates that upon alloying with moderate Cu, Pb, Bi, and S using an appropriate preparation method, quaternary CuPbBi5S9 compounds can exhibit excellent figure of merit ZT within the temperature range 298-723 K. A low average velocity, low Young's modulus and Debye temperature, and large Gruneisen parameter, determined experimentally, indicate strong lattice anharmonicity in CuPbBi5S9 crystals. Furthermore, density functional theory calculations (local vibration of low-frequency acoustic phonons) justify the low lattice thermal conductivity of CuPbBi5S9 compounds. Because of the low thermal conductivity (0.514 W m(-1)K(-1)) and a relatively high power factor (293 mW m(-1)K(-2)), a maximum ZT of 0.42 was achieved at 723 K for CuPbBi5S9 prepared by mechanical alloying combined with solid-state melting. Thus, CuPbBi5S9 materials are promising candidates for use as high-performance thermoelectric materials in the intermediate-temperature range. (C) 2021 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.
Thermoelectric Properties Of Sn-Doped P-Type Cu3sbse4: A Compound With Large Effective Mass And Small Band Gap

tianran wei,heng wang,zachary m gibbs,chaofeng wu,g jeffrey snyder,jingfeng li

DOI: https://doi.org/10.1039/c4ta01957a

IF: 11.9

2014-01-01

Journal of Materials Chemistry A

Abstract:Cu3SbSe4-based compounds composed of earth-abundant elements have been found to exhibit good thermoelectric performance at medium temperatures. High zT values were achieved in previous studies, but further insight into the transport mechanism as well as some key material parameters is still needed. In this work, we studied the electrical and thermal transport properties of Sn-doped Cu3SbSe4 between 300 K and 673 K. It was found that the single parabolic band model explains the electrical transport very well. Experimentally, we determined the band gap to be around 0.29 eV. The density-of-state effective mass was found to be about 1.5 m(e) for the doped samples. The transport properties suggested degeneracy splitting near the valence band maximum that was not captured by previous band structure calculations. The maximum zT similar to 0.70 was obtained at 673 K, and the optimized carrier density was similar to 1.8 x 10(20) cm(-3), and the potential for further improvement of zT via material engineering is briefly discussed.
Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen

DOI: https://doi.org/10.48550/arXiv.2006.06260

2020-06-11

Materials Science

Abstract:Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures, and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.
Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe 2 via Cd-Doping

Tao Chen,Hongwei Ming,Baoli Zhang,Chen Zhu,Jian Zhang,Qi Zhou,Di Li,Hongxing Xin,Xiaoying Qin

DOI: https://doi.org/10.1021/acsaem.0c02820

IF: 6.4

2021-01-21

ACS Applied Energy Materials

Abstract:Thermoelectric properties of CuSb1–xCdxSe2 (x = 0–0.08) compounds, prepared by vacuum melting, were studied at temperatures of 300–675 K. The results indicate that Cd doping causes both remarkable increase in the Seebeck coefficient and drastic drop of lattice thermal conductivity. The enhancement of thermopower originates mainly from increase of electronic density of states, while the drop of lattice thermal conductivity can be ascribed to enhanced phonon scattering by introduced impurity (dopant) atoms. As a consequence, thermoelectric figure of merit ZT is improved with a maximum ZT = 0.55 (at 675 K) being reached for CuSb0.98Cd0.02Se2, which is around 2.2-fold higher than that of the CuSbSe2 pristine compound. Our results indicate that Cd substitution is a feasible way to improve thermoelectric performance of the CuSbSe2-based system.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c02820?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c02820</a>.Measurement of density and calculation of capacity, partial DOS of CuSbSe2 and CuSb0.9375Cd0.0625Se2, thermal diffusivity and carrier thermal conductivity, and calculation of lattice thermal conductivity (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c02820/suppl_file/ae0c02820_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
High Thermoelectric Performance of AgSb1-xPbxSe2 Prepared by Fast Non-Equilibrium Synthesis.

Xing Tan,Jingxuan Ding,Huifang Luo,Olivier Delaire,Jiong Yang,Zhifang Zhou,Jin-Le Lan,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1021/acsami.0c10508

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:AgSbSe2 is a typical member of cubic I-V-VI2 semiconductors, which are known for their extremely low lattice thermal conductivity (κl). However, the low electrical conductivity of AgSbSe2, below ∼10 S cm-1 at room temperature, has hindered its thermoelectric performance. In this work, single-phase AgSbSe2 bulk samples with much higher electrical conductivity were synthesized via self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) for the first time. Pb doping through the nonequilibrium process further increases the electrical conductivity to >100 S cm-1. Furthermore, continuously increased effective mass md* can be achieved upon Pb doping because of the multiple degenerate valence bands of AgSbSe2 and the energy-filtering effect induced by in situ-formed nanodots. The simultaneous enhancement of both the electrical conductivity and Seebeck coefficient contributes to an unprecedentedly high average power factor of 6.75 μW cm-1 K-2. Meanwhile, the introduced dense grain boundaries and point defects enhance the phonon scattering and consequently suppress κl, yielding a high ZT value of 1.2 at 723 K in AgSb0.94Pb0.06Se2. This study opens a new avenue for rapid, low-cost, large-scale production of AgSbSe2-based materials and demonstrates that Pb-doped AgSbSe2 prepared via the SHS-SPS method is a promising candidate for thermoelectric applications.
Ultralow Thermal Conductivity and High ZT of Cu2Se-based Thermoelectric Materials Mediated by TiO2−n Nanoclusters

Jincheng Yu,Xiaodong Liu,Haihua Hu,Yilin Jiang,Hua-Lu Zhuang,Hezhang Li,Bin Su,Jing-Wei Li,Zhanran Han,Zhengqin Wang,Lu Chen,Kei Hayashi,Yuzuru Miyazaki,B. Layla Mehdi,Jing-Feng Li

DOI: https://doi.org/10.1016/j.joule.2024.06.007

IF: 46.048

2024-01-01

Joule

Abstract:Cu2Se is a promising p-type thermoelectric material for energy harvesting due to its intrinsically low thermal conductivity arising from the liquid-like Cu ions, leaving very limited room for regulation of phonon propagation. Herein, the thermal conductivity of superionic Cu2Se is efficiently mediated by titanium oxide nanoclusters, leading to an exceptionally high thermoelectric figure of merit (ZT) at high temperatures. By controlling the oxygen deficiency, the sophisticated TiO2-n architectures can be constructed with optimized phase composition and electrical properties. The presence of p-n junctions helps to reduce carrier concentration without degrading mobility, and the complex heterogeneous interfaces generated by TiO2-n nanoclusters give rise to huge interfacial thermal resistance. Benefiting from the suppressed electrical transport and enhanced phonon scattering, the total thermal conductivity shows a reduction of at least 36%, contributing to a high ZT value of 2.8 at 973 K. This work demonstrates a paradigm of modulating thermal transport through the self-assembly design.
Enhanced Thermoelectric Properties of Earth-Abundant Cu2sns3 Via in Doping Effect

Qing Tan,Wei Sun,Zhiliang Li,Jing-Feng Li

DOI: https://doi.org/10.1016/j.jallcom.2016.02.185

IF: 6.2

2016-01-01

Journal of Alloys and Compounds

Abstract:Ternary copper tin sulfide (Cu-Sn-S) compounds have been investigated for decades as promising candidates of earth-abundant thin film solar cell absorbers. Cu2SnS3 is a representative member of this material system, and is highly expected to be a potential thermoelectric material by the first-principles calculations. In this work, Cu2SnS3 bulk materials were synthesized by the mechanical alloying (MA) combined with spark plasma sintering (SPS), and their crystal structures, electronic transport properties and enhanced thermoelectric performance were systematically investigated. We found that pristine Cu2SnS3 is a p-type thermoelectric material with a relatively high thermopower up to 300 mV/K and low thermal conductivity below 1.0 W/m K above 700 K. It revealed that In doping is an effective means to improve the electrical transport properties, which leads to a figure of merit (ZT) of Cu2Sn0.9In0.1S3 close to 0.6 at the relatively low temperature (773 K). (C) 2016 Elsevier B.V. All rights reserved.
Dense twin and domain boundaries lead to high thermoelectric performance in Sn-doped Cu 3 SbS 4

Baobiao Lu,Mingyuan Wang,Jian Yang,Haigang Hou,Xiangzhao Zhang,Zhongqi Shi,Junlin Liu,Guanjun Qiao,Guiwu Liu

DOI: https://doi.org/10.1063/5.0084862

IF: 4

2022-04-25

Applied Physics Letters

Abstract:Exploring high-performance medium-temperature thermoelectric (TE) materials with nontoxicity and low price is of great significance for waste heat recovery. In spite of low price and nontoxicity, the poor intrinsic electrical properties of Cu 3 SbS 4 restrict its potential commercial applications. Herein, intermediate-phase-free Cu 3 SbS 4 -based bulks were fabricated by incorporating a sulfurization process between melting and sintering, and the as-formed dense twin and domain boundaries in a Sn-doped Cu 3 SbS 4 system can significantly enhance the electrical conductivity and retain a higher level of the Seebeck coefficient based on the energy filtering effect and band flattening and convergence. The high power factor of ∼13.6 μW cm −1 K −2 and relatively low thermal conductivity are achieved for a 1.5%Sn-doped Cu 3 SbS 4 sample, resulting in a record zT of ∼0.76 at 623 K in Cu 3 SbS 4 -based systems. This work develops an effective pathway to synthesize intermediate-phase-free Cu 3 SbS 4 -based TE materials and provides an effective strategy for enhancing TE performance in diamond-like semiconductors by interface engineering.

physics, applied
Electronic origin of the enhanced thermoelectric efficiency of Cu2Se

Shucui Sun,Yiwei Li,Yujie Chen,Xiang Xu,Lu Kang,Jingsong Zhou,Wei Xia,Shuai Liu,Meixiao Wang,Juan Jiang,Aiji Liang,Ding Pei,Kunpeng Zhao,Pengfei Qiu,Xun Shi,Lidong Chen,Yanfeng Guo,Zhengguo Wang,Yan Zhang,Zhongkai Liu,Lexian Yang,Yulin Chen

DOI: https://doi.org/10.1016/j.scib.2020.07.007

IF: 18.9

2020-11-01

Science Bulletin

Abstract:Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials.

multidisciplinary sciences
Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering

D Li,H W Ming,J M Li,B Jabar,W Xu,J Zhang,X Y Qin

DOI: https://doi.org/10.1021/acsami.9b20103

2020-01-22

Abstract:Cu3SbSe4-based materials have attracted much attention for thermoelectric power generation in the mid-temperature range due to their low cost, ecofriendliness, and abundant elements on the earth. However, the peak figure of merit (ZT) for the Cu3SbSe4-based system prepared by the fusion method is usually smaller than unity because of its high thermal conductivity. Here, we show that through a coprecipitation method combined with spark plasma sintering ultrafine-grained Cu3Sb0.94Sn0.06Se4-ySy (y = 0, 0.5) embedded with Cu3SbSe3 nanoprecipitates can be prepared. Due to the ultralow thermal conductivity and enhanced Seebeck coefficient, a record-high ZT value of 1.32 is achieved for the sample Cu3Sb0.94Sn0.06Se3.5Se0.5. The ultralow thermal conductivity is attributed to the enhanced phonon scattering caused by the nanoprecipitates and fine grains of the samples, and the improved Seebeck coefficient originates from the enhancement of electronic density-of-state effective mass. Present results demonstrate that excellent thermoelectric performance can be realized in dual-substituted and fine-grained Cu3Sb0.94Sn0.06Se4-ySy with nanoprecipitates.

Is Cu3sbse3 A Promising Thermoelectric Material?

Is Cu₃SbSe₃ a Promising Thermoelectric Material?

Unlocking the Potential of Cu3SbSe3: Ultralow Thermal Conductivity and Enhanced Thermoelectric Performance

Are Cu2Te‐Based Compounds Excellent Thermoelectric Materials?

Facile Synthesis of Monodisperse Cu3SbSe4 Nanoparticles and Thermoelectric Performance of Cu3SbSe4 Nanoparticle-Based Materials

CsCu5S3: Promising Thermoelectric Material with Enhanced Phase Transition Temperature.

Β‐cscu5se3: A Promising Thermoelectric Material Going Beyond Photovoltaic Application

Superconductivity in efficient thermoelectric Cu$_3$Sb$_{0.98}$Al$_{0.02}$Se$_4$

Realizing the Ultralow Lattice Thermal Conductivity of Cu3SbSe4 Compound via Sulfur Alloying Effect

High Thermoelectric Performance of Cu 3 SbSe 4 Obtained by Synergistic Modulation of Power Factor and Thermal Conductivity

Towards a new chalcopyrite high-performance thermoelectric semiconductor Cu3InSnSe5 by entropy engineering

CuPbBi<sub>5</sub>S<sub>9</sub> thermoelectric material with an intrinsic low thermal conductivity: Synthesis and properties

Thermoelectric Properties Of Sn-Doped P-Type Cu3sbse4: A Compound With Large Effective Mass And Small Band Gap

Electronic Origin for the Enhanced Thermoelectric Efficiency of Cu2Se

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe 2 via Cd-Doping

High Thermoelectric Performance of AgSb1-xPbxSe2 Prepared by Fast Non-Equilibrium Synthesis.

Ultralow Thermal Conductivity and High ZT of Cu2Se-based Thermoelectric Materials Mediated by TiO2−n Nanoclusters

Enhanced Thermoelectric Properties of Earth-Abundant Cu2sns3 Via in Doping Effect

Dense twin and domain boundaries lead to high thermoelectric performance in Sn-doped Cu 3 SbS 4

Electronic origin of the enhanced thermoelectric efficiency of Cu2Se

Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering