Development of LPE Process for Fabrication of Coated Conductors

Izumi Teruo,Hobara Natsuro,Izumi Toru,Hasegawa Katsuya,Kai Masahiko,Fuji Hiroshi,Honjo Tetsuji,Xin Yao,Krauns Christian,Kuznetsov Maxim,Nakamura Yuichi,Shiohara Yuh
DOI: https://doi.org/10.1557/proc-659-ii4.6
2000-01-01
Abstract:Recent Progress of development for coated conductors by the LPE technique was reviewed. Double layered LPE films were applied to the growth on metal substrates. In both cases of MgO- and NiO- buffers, the constructions were succeeded to grow on Hastelloy and Ni tapes, respectively. In the case of the MgO-buffer, the problem, which is the melting back of the 1 st LPE layer during dipping for the growth of the 2 nd LPE layer, was found. The problem was solved by means of the selection of the materials for each LPE layer to introduce the difference in the growth temperature for the 1 st and the 2 nd layers. The lower growth temperature for the 1 st LPE layer than that for 2 nd one is effective to avoid the problem. On the other hand, the double layered LPE films on Ni tapes revealed Tc of 85K. Concerning the long tape processing, the high growth rate of 1≈ was confirmed even without rotation using the long tape apparatus.
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