Abstract:RE123 superconductive oxides are expected to be utilized for electric conductors due to its high superconducting performance at 77 K. The liquid phase epitaxy (LPE) process has an advantage to fabricate a thick superconducting layer at a high growth rate with high superconducting properties for realizing high J(c) conductors. We tried two structures to fabricate in-plane aligned Y123 layer on textured Ni substrates with SOE-NiO. One was a double layered LPE structure and the other was a nonreactive buffered structure using a BaZrO3 buffer layer. The in-plane aligned Y123 LPE layer was successfully grown on an NiO/Ni textured substrate for each structure and the T-c. value of 90 K was achieved in the non-reactive buffered structure. The in-plane alignment of the seed layer was found to be a crucial factor for the double LPE process since the partial dissolution of worse aligned seed crystals caused formation of non-coverage regions on the surface of the NiO buffer layer, where the NiO buffer layer would react with the solution during the second LPE processing.

LPE Growth of RE123 on a Metal Substrate