Abstract:Insertion of quantum wells (QWs) extends the absorption edge to a longer wavelength than the value of a p-i-n cell without the QWs, which is preferable for the improved current matching of a InGaP/GaAs/Ge multijunction cell. The QWs, however, reduce the open-circuit voltage (V-oc) and degrade the fill factor; the latter is significant for a large number of QWs that are mandatory for sufficient light absorption. As a structure to minimize these drawbacks, a QW superlattice, a strain-balanced In0.13Ga0.86As (4.7 nm)/GaAs0.57P0.43 (3.1 nm) stack, was implemented by metalorganic vapour-phase epitaxy. It brought about an enhancement in short-circuit current density (3.0mAcm(-2)) with a minimal drop in V-oc(0.03 V) compared with a p-i-n cell without the superlattice. The collection efficiency of photocarriers from the wells to an external circuit was evaluated: the efficiency was above 0.95 for the superlattice, while it was below 0.8 at a large forward bias for a conventional QW cell with thicker barriers. With the fast electron-hole separation in the superlattice owing to tunnelling transport, the superlattice cell exhibited a steeper increase in V-oc as a function of the sunlight concentration ratio than the conventional QW cell: at the concentration ratio of 50, the value of V-oc for the superlattice cell was almost equivalent to the value of the GaAs p-i-n cell without QWs. As a possible mechanism behind such an enhancement in V-oc, photocurrent generation by two-step photon absorption was observed, using the electron ground state of the superlattice as an intermediate state.

MBE Growth of 1 Ev GaNAs/InGaAs Superlattice with Various Periods Thicknesses and Corresponding Photovoltaic Response

Metalorganic vapor phase epitaxy growth of dual junction solar cell with InGaAs/GaAsP superlattice on Ge

Photoelectric Property Improvement of 1.0-eV GaInNAs and Applications in Lattice-Matched Five-Junction Solar Cells

Optical Characteristics of Gaas Nanowire Solar Cells

Optimization of GaAs Nanowire Array for Solar Cells

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Study on GSMBE growth of InGaAs/InP superlattice materials

1.7Ev Al0.2ga0.8as Solar Cells Epitaxially Grown on Silicon by Ssmbe Using A Superlattice and Dislocation Filters

Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy

GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Ingaas/Gaasp Strain-Compensated Superlattice Solar Cell for Enhanced Spectral Response

Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications

High-pressure MOCVD Growth of InGaN Thick Films Toward the Photovoltaic Applications.

Carrier Recombination Dynamics of MBE Grown InGaAsP Layers with 1ev Bandgap for Quadruple-Junction Solar Cells

Structural Evolution of GeMn/Ge Superlattices Grown by Molecular Beam Epitaxy under Different Growth Conditions

A quantum-well superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration

MBE Growth of Mid-Wavelength Infrared Photodetectors Based on High Quality InAs/AlAs/InAsSb Superlattice

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

Growth and Characterization of Algan/Gan Superlattices

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy