Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

Engineering Electronic Structure of a Two Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Topological Edge States and Electronic Structures of A 2d Topological Insulator: Single-Bilayer Bi (111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Edge Engineering of A Topological Bi(111) Bilayer

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Topological and Electronic Transitions in a Sb(111) Nanofilm: the Interplay Between Quantum Confinement and Surface Effect

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Interfacial protection of topological surface states in ultrathin Sb films.

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States

Electronic and Topological Transitions in Sb (111) Thin Films

Epitaxial Fabrication of Topological Bi-Sb Alloy Films by Surface Alloying of Sb Nanofilms

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States

Abstract Submitted for the MAR16 Meeting of The American Physical Society One-dimensional edge states in Bi(111) bilayer grown on Sb2Te3

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.