Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

On-chip Integration of InGaAs/GaAs Quantum Dot Lasers with Waveguides and Modulators on Silicon

Tunable Quantum Dot Lasers Grown Directly on Silicon

Monolithic integration of embedded III-V lasers on SOI

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

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Monolithic Quantum Dot Discrete Mode Laser on SOI

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Photonic-integrated circuits and components using quantum well intermixing

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

High Speed Evanescent Quantum‐Dot Lasers on Si

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review

Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

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Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform