Electrical Control of Carriers' Spin Orientation in the FeVTiSi Heusler Alloy

Jiahui Zhang,Xingxing Li,Jinlong Yang

DOI: https://doi.org/10.1039/c4tc02587c

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Control of the spin-polarization direction by carrier doping in a quaternary Heusler alloy FeVTiSi with a bipolar magnetic semiconducting character and room temperature ferromagnetism.

What problem does this paper attempt to address?

Electrical Control of Carriers Spin Orientation in FeVTiSi Heusler Alloy

Jiahui Zhang,Xingxing Li,Jinlong Yang

DOI: https://doi.org/10.48550/arXiv.1411.3426

2014-11-13

Abstract:The direct control of carriers spin by electric field under room temperature is one of the most important challenges in the field of spintronics. For this purpose, we here propose a quaternary Heusler alloy FeVTiSi. Based on first principles calculations, FeVTiSi alloy is found to be an intrinsic bipolar magnetic semiconductor in which the valence band and conduction band approach the Fermi level through opposite spin channels. Thus FeVTiSi alloy can conduct completely spin-polarized currents with tunable spin-polarization direction simply by applying a gate voltage. Furthermore, by Monte Carlo simulations based on the classical Heisenberg Hamiltonian, the Curie temperature of FeVTiSi alloy is predicted to be as high as 1293 K, far above the room temperature. The bipolar magnetic semiconducting character and the high Curie temperature endow the FeVTiSi alloy great potentials in developing electrically controllable spintronic devices working at room temperature.

Materials Science
Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Asif Ilyas,Shuling Xiang,Miaogen Chen,Muhammad Yar Khan,Hua Bai,Pimo He,Yunhao Lu,Renren Deng

DOI: https://doi.org/10.1039/d0nr06054b

IF: 6.7

2021-01-01

Nanoscale

Abstract:The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices. However, using this approach for practical applications remains challenging due to its volatile memory. Herein, we adopt an alternative strategy, where the bistable ferroelectric switches (P up arrow and P down arrow) of Sc2CO2 (SCO) assist the ferromagnetic states of Cr2Ge2Te6 (CGT) in order to achieve non-volatile memories. Moreover, MXene SCO, being an aided layer in multiferroic CGT/SCO hetero-structures, also modifies the electronic properties of CGT to half metal by its polarized P down arrow state. In contrast, the P up arrow state does not change the semiconducting nature of CGT. Hence, non-volatile, electrical-controlled switching of ferromagnetic CGT can be engineered by the two opposite ferroelectric states of single layer SCO. Importantly, the magnetic easy axis of CGT switches from in-plane to out-of-plane when the direction of electric polarization of SCO is altered from P down arrow to P up arrow.
Nonvolatile electrical control of 2D Cr 2 Ge 2 Te 6 and intrinsic half metallicity in multiferroic hetero-structures

Asif Ilyas,Shuling Xiang,Miaogen Chen,Muhammad Yar Khan,Hua Bai,Pimo He,Yunhao Lu,Renren Deng

DOI: https://doi.org/10.1039/d0nr06054b

IF: 6.7

2021-01-01

Nanoscale

Abstract:The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

Lili Kang,Yongxing Deng,Xiaohong Zheng,Peng Jiang,Zhenzhen Feng,Weiyang Wang,Gaofeng Zhao

DOI: https://doi.org/10.1063/5.0197848

IF: 4

2024-03-25

Applied Physics Letters

Abstract:Multiferroic van der Waals (vdW) heterostructures offer an exciting route toward the nanoelectronics and spintronics device technology. How to realize the mutual regulation between ferroelectric and magnetic materials has attracted extensive research. In this work, based on the density functional theory, we simulate a vdW multiferroic heterostructure based on the bipolar magnetic semiconductor material graphone and ferroelectric monolayer In2Te3 and further investigate its electronic properties. We find that direct contact between In2Te3 and graphone induces a transition in graphone from a ferromagnetic state to a non-magnetic state. Fortunately, the magnetic properties of graphone are preserved by using graphene as an intercalation layer, and the graphone monolayer changes from its original semiconductor to a half-metal in the graphone/graphene/In2Te3 vdW heterostructure for P↓ state. Furthermore, by adjusting the layer spacing of the heterostructure, the spin polarization states of graphone at the Fermi level (EF) are regulated between spin-up (S↑) and spin-down (S↓) with the reversal of ferroelectric polarization states. Our results not only provide a promising way to realize the half-metallicity in 2D magnetic materials but also computationally predict the ferroelectric control of the spin polarization state, which has great application potential in the next-generation nonvolatile electrically controlled spintronic devices.

physics, applied
Electric control of spin injection into a ferroelectric semiconductor

Xiaohui Liu,J. D. Burton,Evgeny Y. Tsymbal

DOI: https://doi.org/10.1103/PhysRevLett.114.046601

2014-06-06

Abstract:Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density functional calculations, we explore the effect of ferroelectric polarization of electron-doped BaTiO3 (n-BaTiO3) on the spin-polarized transmission across the SrRuO3/n-BaTiO3 (001) interface. Our study reveals that the interface transmission is negatively spin-polarized and that ferroelectric polarization reversal leads to a change in the transport spin polarization from -65% to -98%. We show that this effect stems from the large difference in Fermi wave vectors between up- and down-spins in ferromagnetic SrRuO3 and a change in the transport regime driven by ferroelectric polarization switching. The predicted sizeable change in the spin polarization provides a non-volatile mechanism to electrically control spin injection in semiconductor-based spintronics devices.

Materials Science
Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures

Huiping Li,Wenguang Zhu

DOI: https://doi.org/10.1021/acs.nanolett.3c04030

IF: 10.8

2023-01-01

Nano Letters

Abstract:Achieving magnetic control of ferroelectricity or electric control of magnetism is usually challenging in material systems as their magnetism and ferroelectricity have distinct fundamental origins and are subject to different symmetry constraints. However, such control has significant promise for a wide range of device applications. In this work, we employ first-principles density functional theory calculations to demonstrate the emergence of spin-driven ferroelectricity in a vertically stacked two-dimensional (2D) van der Waals magnetic heterostructure, formed by two ferromagnetic (FM) CrBr3 layers separated by an antiferromagnetic (AFM) MnPSe3 layer, delicately designed to be structurally inversion symmetric but magnetically asymmetric. The spin-induced out-of-plane electric polarization of the entire heterostructure can be reversibly controlled by an external magnetic field. We further validate the effectiveness of this design strategy in several other lattice-matched FM/AFM/FM heterostructures, thereby providing a novel family of multiferroic systems based on 2D materials.
Ferroelectric control of a spin-polarized two-dimensional electron gas

Yakui Weng,Wei Niu,Xin Huang,Ming An,Shuai Dong

DOI: https://doi.org/10.1103/physrevb.103.214101

IF: 3.7

2021-06-01

Physical Review B

Abstract:The spin-polarized two-dimensional electron gas (2DEG) at oxide interfaces is an emerging physical phenomenon, which is technologically important for potential device applications. However, most previous relevant studies only focused on the creation and characterization of the spin-polarized 2DEG. To push forward the device applications, the control of a spin-polarized 2DEG by electric field is an important step. Here, a model system based on antiferromagnetic and ferroelectric perovskites, i.e., the YTiO3/PbTiO3 superlattice, is designed to manipulate the spin-polarized 2DEG. By switching the direction of polarization, the spin-polarized 2DEG can be effectively tuned for both symmetric interfaces and asymmetric polar interfaces.

physics, condensed matter, applied,materials science, multidisciplinary
Ferroelectric control of spin-polarized two-dimensional electron gas

Yakui Weng,Wei Niu,Xin Huang,Ming An,Shuai Dong

DOI: https://doi.org/10.1103/PhysRevB.103.214101

2021-10-27

Abstract:Spin-polarized two-dimensional electron gas (2DEG) at oxide interfaces is an emerging physical phenomenon, which is technologically important for potential device applications. However, most previous relevant studies only focused on the creation and characterization of the spin-polarized 2DEG. To push forward the device applications, the control of spin-polarized 2DEG by electric field is an important step. Here, a model system based on antiferromagnetic and ferroelectric perovskites, i.e., YTiO3/PbTiO3 superlattice, is designed to manipulate the spin-polarized 2DEG. By switching the direction of polarization, the spin-polarized 2DEG can be effectively tuned for both symmetric interfaces and asymmetric polar interfaces.

Strongly Correlated Electrons
Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Yaping Wang,Xinguang Xu,Weixiao Ji,Shengshi Li,Yanlu Li,Xian Zhao

DOI: https://doi.org/10.1038/s41524-023-01178-2

IF: 12.256

2023-12-15

npj Computational Materials

Abstract:Abstract Two-dimensional (2D) XY ferromagnets have drawn pronounced interest in recent years, but the characteristic of easy-plane magnetization restricts their application in spintronics to some extent. Here, we propose a general strategy for constructing multiferroic van der Waals heterostructures, aiming to achieve electrical control over the magnetic anisotropy in 2D XY ferromagnets. The validity of this strategy is verified by the heterostructure composed of ferromagnetic VBi 2 Te 4 and ferroelectric In 2 Se 3 monolayers. By manipulating the polarized states of In 2 Se 3 , the VBi 2 Te 4 can be reversibly transformed between 2D XY and Heisenberg ferromagnets, characterized by the switching of easy magnetization axis between in-plane and out-of-plane directions. More interestingly, accompanied by the changes in magnetic anisotropy, the VBi 2 Te 4 also demonstrates a phase transition from a semiconductor to a half-metal state, which can be ascribed to the band alignment and interfacial charge transfer. The switchable magnetic and electronic properties enable the heterostructure to be utilized in nonvolatile memory and logic devices. Additionally, the half-metallicity and magnetocrystalline anisotropy energy of the heterostructure can be effectively tuned by biaxial strain. These findings not only pave the way for electrically nonvolatile control of 2D XY ferromagnet, but also facilitate the development of interfacial magnetoelectric physics and applications.

materials science, multidisciplinary,chemistry, physical
Electric control of spin polarization orientation in a magnetic–electric barrier structure

Feng Zhai,H.Q. Xu

DOI: https://doi.org/10.1016/j.physleta.2007.05.037

IF: 2.707

2007-01-01

Physics Letters A

Abstract:We investigate spin-dependent transport properties of two-dimensional electron systems modulated by both the stray field from a ferromagnetic metal (FM) stripe and the electrostatic potential (EP) provided by two normal metal Schottky stripes which sandwich the FM stripe. The EP consists of a single barrier and a single well. By switching the gate voltages applied to the Schottky stripes, the barrier and the well exchange their positions. Accordingly, the spatial region, where spin-dependent resonant tunneling happens, is transferred from one side of the FM stripe to the other, resulting in a rotation or a reversal of the spin polarization orientation.
Electric-controlled Half-Metallicity in Magnetic Van Der Waals Heterobilayer

Cheng Tang,Lei Zhang,Stefano Sanvito,Aijun Du

DOI: https://doi.org/10.1039/d0tc01541e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Electric-field controlled half-metallic transport in CrI3–CrGeTe3 heterobilayers for spintronic applications.
Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF

Yuhui Li,Jun Deng,Yan-Fang Zhang,Xin Jin,Wen-Han Dong,Jia-Tao Sun,Jinbo Pan,Shixuan Du

DOI: https://doi.org/10.1038/s41524-023-01005-8

IF: 12.256

2023-04-04

npj Computational Materials

Abstract:Nonvolatile electrical control of spin polarization in two-dimensional (2D) magnetic semiconductors is greatly appealing toward future low-dissipation spintronic nanodevices. Here, we report a 2D material VSeF, which is an intrinsic bipolar magnetic semiconductor (BMS) featured with opposite spin-polarized valence and conduction band edges. We then propose a general nonvolatile strategy to manipulate both spin-polarized orientations in BMS materials by introducing a ferroelectric gate with proper band alignment. The spin-up/spin-down polarization of VSeF is successfully controlled by the electric dipole of ferroelectric bilayer Al 2 Se 3 , verifying the feasibility of the design strategy. The interfacial doping effect from ferroelectric gate also plays a role in enhancing the Curie temperature of the VSeF layer. Two types of spin field effect transistors, namely multiferroic memory and spin filter, are further achieved in VSeF/Al 2 Se 3 and VSeF/Al 2 Se 3 /Al 2 Se 3 multiferroic heterostructures, respectively. This work will stimulate the application of 2D BMS materials in future spintronic nanodevices.

materials science, multidisciplinary,chemistry, physical
Nonvolatile Modulation of Spin Transport in PMN-PT/LiFe5O8/Pt Multiferroic Heterostructures

Shiwei Chen,Cuimei Cao,Lvkang Shen,Ming Liu,Changjun Jiang,Qingfeng Zhan,Xuepeng Qiu

DOI: https://doi.org/10.1063/5.0070444

IF: 4

2021-01-01

Applied Physics Letters

Abstract:Beside playing a keystone role in spin-field-effect transistor, electrical control of spin transport is also of fundamental and practical importance for many other spintronic devices due to the advantages of energy efficiency and versatility. In this work, we demonstrate a significant electrical modulation of spin transport in the PMN-PT/LiFe5O8/Pt heterostructures. The key spin transport parameters, including the spin Hall angle, spin diffusion length, and spin mixing conductance, were extracted through the thickness dependence of spin Hall magnetoresistance. It is found that the spin Hall angle decreases with the decrease in temperature, while the spin diffusion length keeps invariant with temperature, revealing the dominance of D'yakonov–Perel' type spin transport in LiFe5O8/Pt. Remarkably, by applying the electric field onto the piezoelectric PMN-PT substrate, the spin Hall angle of Pt can be modulated 28% and exhibits a nonvolatile hysteresis relationship with the applied electric field, which primarily originates from the modulation of Pt resistivity induced by the strain coupling through the ferroelastic domain switching of the ferroelectric PMN-PT substrate. Our results elucidate the spin transport characteristics in PMN-PT/LiFe5O8/Pt heterostructures and pave the way toward novel spintronic devices with electrically tunable spin current generation and transport processes.
Ferroelectric Control of Polarity of the Spin‐polarized Current in Van Der Waals Multiferroic Heterostructures

Xiwen Zhang,Zhaobo Zhou,Xing Yu,Yilv Guo,Yunfei Chen,Jinlan Wang

DOI: https://doi.org/10.1002/adfm.202301353

IF: 19

2023-04-29

Advanced Functional Materials

Abstract:Ferroelectric control of polarity of the spin‐polarized current can be achieved in van der Waals multiferroic heterostructures via reversible FE switch of the internal electric field and the FE control of the interfacial effect. This opens up new opportunities for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as multiferroic spin field‐effect transistors. Ferroelectric (FE) control of magnetism at nanoscale, for instance, FE control of the polarity of spin‐polarized current is crucial for technological advances in magnetoelectric and spintronic applications. However, this fascinating functionality has not been reported in nanoscale systems yet. Herein, a new class of FE/A‐type antiferromagnetic heterobilayer/FE van der Waals (vdW) multiferroic structures is found, in which the FE control of polarity of spin‐polarized current is found possible. Take Sc2CO2/CrSiTe3/CrGeTe3/Sc2CO2 heterostructure as a successful example. First‐principles calculations reveal that its polarity of half‐metallicity can be switched by flipping the FE polarization orientation. Meanwhile, device transport simulation shows that its up/down spin current transmission ratio is as large as 0.1 × 103 at P→↑↑ Sc2CO2 configuration and is only 2.6 × 10−3 at P→↓↓ Sc2CO2 configuration in the vdW multiferroic heterostructures. Essentially, it stems from the reversible FE switch of the internal electric field across the CrSiTe3/CrGeTe3 heterobilayer and the FE control of the interfacial effect between Sc2CO2 and Cr(Si/Ge)Te3 layers. This work opens a direction for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as spin field‐effect transistors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Control of spin in a La(Mn,Zn)AsO alloy by carrier doping

Xingxing Li,Xiaojun Wu,Jinlong Yang

DOI: https://doi.org/10.1039/c3tc31514b

IF: 6.4

2013-01-01

Journal of Materials Chemistry C

Abstract:The control of spin without magnetic field is one of the challenges in developing spintronic devices. In an attempt to solve this problem, we proposed a novel hypothetical La(Mn0.5Zn0.5)AsO alloy from two experimentally synthesized rare earth element transition metal arsenide oxides, i.e. LaMnAsO and LaZnAsO. On the basis of the first-principles calculations with strong-correlated correction, we found that the La(Mn0.5Zn0.5)AsO alloy is an antiferromagnetic semiconductor at the ground state, and a bipolar magnetic semiconductor at the ferromagnetic state. Both electron and hole doping in the La(Mn0.5Zn0.5)AsO alloy induce the transition from antiferromagnetic to ferromagnetic, as well as semiconductor to half metal. In particular, the spin-polarization direction is switchable depending on the doped carrier type. As carrier doping can be realized easily in experiment by applying a gate voltage, the La(Mn0.5Zn0.5)AsO alloy stands as a promising spintronic material to generate and control the spin-polarized carriers with an electric field.
Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Yu Ye,Jun Xiao,Hailong Wang,Ziliang Ye,Hanyu Zhu,Mervin Zhao,Yuan Wang,Jianhua Zhao,Xiaobo Yin,Xiang Zhang

DOI: https://doi.org/10.1038/NNANO.2016.49

IF: 38.3

2016-01-01

Nature Nanotechnology

Abstract:The use of electric fields to control spin currents, which is one of the goals of modern spintronics, has now been extended to control the valley degree of freedom in a 2D semiconductor.
Electrical control of topological spin textures in two-dimensional multiferroics

Jiawei Jiang,Rui Li,Wenbo Mi

DOI: https://doi.org/10.1039/d1nr06266b

IF: 6.7

2021-01-01

Nanoscale

Abstract:The electrical control of topological magnetism can be realized in two-dimensional magnetoelectric multiferroics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Evolution of structure, magnetism, and electronic/thermal-transports of Ti(Cr)-substituted Fe2CrV all-d-metal Heusler ferromagnets

Yiting Feng,Shen Zhang,Qingqi Zeng,Meng Lyu,Junyan Liu,Jinying Yang,Yibo Wang,Qiusa Ren,Yang Liu,Binbin Wang,Hongxiang Wei,Enke Liu

2024-09-15

Abstract:All-d-metal full-Heusler alloys possess superior mechanical properties and high spin polarization, which would play an important role in spintronic applications. Despite this, their electrical and thermal transport properties have not been comprehensively investigated till now. In this work, we present an analysis on the evolution of structural, magnetic and transport properties of Cr- and Ti-substituted Fe2CrV all-d-metal Heusler alloys by combining theoretical calculations and experiments. Both series of alloys crystallize in Hg2CuTi-type structure. With increasing Ti doping, the calculated total magnetic moments of Fe50Cr25V25-xTix decrease linearly. The experimental saturation magnetization is highly consistent with theoretical calculations and Slater-Pauling rule when x < 4, indicating the highly ordered atomic occupation. The magnetization and Curie temperature can be significantly tuned by altering spin polarizations and exchange interactions. The introduction of the foreign atom, Ti, results in a linear increase in residual resistivity, while electron-phonon scattering keeps relatively constant. The maximum values for electrical and thermal transport properties are observed in the stoichiometric Fe2CrV composition.

Materials Science
Control of Spin in La(Mn,Zn)AsO Alloy by Carrier Doping

Xingxing Li,Xiaojun Wu,Jinlong Yang

DOI: https://doi.org/10.48550/arXiv.1308.0439

2013-08-02

Abstract:The control of spin without magnetic field is one of challenges in developing spintronic devices. In an attempt to solve this problem, we proposed a novel hypothetic LaMn0.5Zn0.5AsO alloy from two experimentally synthesized rare earth element transition metal arsenide oxides, i.e. LaMnAsO and LaZnAsO. On the basis of the first-principles calculations with strong-correlated correction, we found that the LaMn0.5Zn0.5AsO alloy is an antiferromagnetic semiconductor at ground state, while bipolar magnetic semiconductor at ferromagnetic state. Both electron and hole doping in the LaMn0.5Zn0.5AsO alloy induces the transition from antiferromagnetic to ferromagnetic, as well as semiconductor to half metal. In particular, the spin-polarization direction is switchable depending on the doped carrier's type. As carrier doping can be realized easily in experiment by applying a gate voltage, the LaMn0.5Zn0.5AsO alloy stands for a promising spintronic material to generate and control the spin-polarized carriers with electric field.

Materials Science
Electrical switching of spin-polarized current in multiferroic tunneling junctions

Ligong Zhang,Yuchen Wang,Xiaoyan Liu,Fei Liu

DOI: https://doi.org/10.1038/s41524-022-00886-5

IF: 12.256

2022-09-16

npj Computational Materials

Abstract:The generation and manipulation of spin-polarized current are critical for spintronic devices. In this work, we propose a mechanism to generate and switch spin-polarized current by an electric field in multiferroic tunnel junctions (MFTJs), with symmetric interface terminations in an antiparallel magnetic state. In such devices, different spin tunneling barriers are realized by the magnetoelectric coupling effect, resulting in a spin-polarized current. By reversing the electric polarization of the ferroelectric layer, the spin polarization of current is efficiently switched for the exchange of spin tunneling barriers. By first-principles quantum transport calculations, we show that a highly spin-polarized current is obtained and manipulated by the electric field in hafnia-based MFTJs based on the proposed mechanism. We also demonstrate that four resistance states are realized in Co/HfO 2 /Co junctions with asymmetric interface terminations. This work provides a promising approach for realizing the electrical control of spin current for spintronic applications.

materials science, multidisciplinary,chemistry, physical

Electrical Control of Carriers' Spin Orientation in the FeVTiSi Heusler Alloy

Electrical Control of Carriers Spin Orientation in FeVTiSi Heusler Alloy

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Nonvolatile electrical control of 2D Cr 2 Ge 2 Te 6 and intrinsic half metallicity in multiferroic hetero-structures

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

Electric control of spin injection into a ferroelectric semiconductor

Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures

Ferroelectric control of a spin-polarized two-dimensional electron gas

Ferroelectric control of spin-polarized two-dimensional electron gas

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Electric control of spin polarization orientation in a magnetic–electric barrier structure

Electric-controlled Half-Metallicity in Magnetic Van Der Waals Heterobilayer

Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF

Nonvolatile Modulation of Spin Transport in PMN-PT/LiFe5O8/Pt Multiferroic Heterostructures

Ferroelectric Control of Polarity of the Spin‐polarized Current in Van Der Waals Multiferroic Heterostructures

Control of spin in a La(Mn,Zn)AsO alloy by carrier doping

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Electrical control of topological spin textures in two-dimensional multiferroics

Evolution of structure, magnetism, and electronic/thermal-transports of Ti(Cr)-substituted Fe2CrV all-d-metal Heusler ferromagnets

Control of Spin in La(Mn,Zn)AsO Alloy by Carrier Doping

Electrical switching of spin-polarized current in multiferroic tunneling junctions