Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Electrical Control of Carriers Spin Orientation in FeVTiSi Heusler Alloy

Electrical Control of Carriers' Spin Orientation in the FeVTiSi Heusler Alloy

Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF

Electric control of spin injection into a ferroelectric semiconductor

Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor

Valley polarization in a two-dimensional high-temperature semiconducting TiInTe 3 honeycomb ferromagnet

Predictable gate-field control of spin in altermagnets with spin-layer coupling

Magnetic Anisotropy Control with Curie Temperature above 400 K in a van der Waals Ferromagnet for Spintronic Device

Ferroelectric control of spin-polarized two-dimensional electron gas

Ferroelectric control of a spin-polarized two-dimensional electron gas

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control

Control of spin in a La(Mn,Zn)AsO alloy by carrier doping

Cr2TiC2-based Double MXenes: Novel 2D Bipolar Antiferromagnetic Semiconductor with Gate-Controllable Spin Orientation Toward Antiferromagnetic Spintronics.

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures

Electrical switching of spin-polarized current in multiferroic tunneling junctions

Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi2Te3/TbFeCo Heterostructures

Control of Spin in La(Mn,Zn)AsO Alloy by Carrier Doping