Abstract:Spintronics, using spins of electrons for the information transmission, process and storage, which is a promising technology in the future. Low-dimensional materials, with strong quantum effect, is an ideal platform for the study of spin-charge interactions and could be utilized as spintronics devices. So far, due to the excess freedoms provided by defect, impurity, interface and boundary effects, the magnetic systems with long-range order are difficult to obtain and manipulate. Exploring novel materials in low-dimensional remains a big challenge. In recent years, based on the well-developed first-principle calculations, together with the classical physical model, its efficient to predict the critical phenomena in low-dimensional materials accurately, which can provide the insights into the spintronics. Moreover, the hybrid and more advanced calculation methods are utilized as effective to understand the electronic structures of strongly correlated systems with consideration of the coulomb interaction between the local d or f electrons. Plus, the magnetic anisotropic energy is also calculated to confirm the easy-magnetization axis, which could be useful to determine the moderate interaction models and further to anticipate the critical behavior in ferromagnetic or antiferromagnetic systems. To utilize the low-dimensional spintronics above room-temperature, high critical transition temperature is prerequisite and in other words, the coupling mechanism matters. Here, through the overview of the recent low-dimensional researches, the highly reliable low-dimensional spintronics are summarized and their exchange interactions are discussed. For one-dimensional spintronics, ligand-H saturated 3d metal chains and MOF-like organic systems are introduced. The mechanical and thermodynamic stabilities are validated and electronic properties shows that the ground states are ferromagnetic or antiferromagnetic, which both own the high magnetization anisotropic energy. Unlike the benzene-ligand ferromagnetic chains, hydrogen can bring the direct interaction into one-dimensional chains and further modulate the transmission properties at the same time. The direct exchange interaction can be a better way to remain the magnetic states. Another MOF-like chains, the exchange interactions are through the basal plane of carbon materials, which could be a super-long exchange interaction. For two-dimensional materials, the CrI3 and Cr2Ge2Te6 are narrowed down to monolayer successfully and they are both ferromagnetic, which the critical transition behaviors can be reproduced using Ising or XY model. Besides, the high throughput calculations are carried out to screen the potential two-dimensional spintronics. However, the understanding of the exchange interactions which is important for keeping the ferromagnetic or antiferromagnetic states is rare. In the Fe-Si alloy systems, a possible two-dimensional system is designed and the ground states is ferromagnetic. Additionally, it is half-metallic and the curie temperature can reach up to 780 K, which is a promising candidate to investigate the two-dimensional spintronics and potential is applications. Other recent calculations also show that through the W-dopant in CrI3 or Cr2Ge2Te6, the curie temperature can be improved, which originates from the narrowing of virtual gaps between orbitals and enhances the coupling interactions. At last, the modulation of spintronics through magnetic fields is difficult for the device miniaturization. Hence, using the electronic field is more convenient and a novel spintronics called bipolar magnetic semiconductor is introduced as a potential material for spintronics. Some other methods like strain and carrier doping could also be utilized to regulate the intrinsic magnetic behaviors reversely.

Control of spin in a La(Mn,Zn)AsO alloy by carrier doping

Control of Spin in La(Mn,Zn)AsO Alloy by Carrier Doping

Spin-Dependent Transport Across Co/Laalo3/Srtio3 Heterojunctions

Exploring Unconventional Ferromagnetism in Hole-doped LaCrAsO: Insights into Charge-Transfer and Magnetic Interactions

Room-temperature Half-Metallicity in La(Mn,Zn)AsO Alloy Via Element Substitutions.

Manipulation of ferromagnetic ordering in magnetic semiconductor Li 1.05 (Zn 0.925 ,Mn 0.075 ) As by In doping

Predictable gate-field control of spin in altermagnets with spin-layer coupling

The synthesis and characterization of 1111-type diluted magnetic semiconductors (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co)

Structurally Manipulating Electron-Spin Polarization Via Δ-Doping in a Magnetic Nanostructure

Control of magnetic anisotropy by orbital hybridization with charge transfer in (La 0.67 Sr 0.33 MnO 3 ) n /(SrTiO 3 ) n superlattice

Controlling Spin Current Polarization Through Non-Collinear Antiferromagnetism

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

Electrical Control of Carriers Spin Orientation in FeVTiSi Heusler Alloy

Bipolar magnetic semiconductor and doping controllable spin transport property in 2D CoI2/MnBr2 heterostructure

Atomic-scale control of magnetic anisotropy via novel spin-orbit coupling effect in La2/3Sr1/3MnO3/SrIrO3 superlattices

The suppression of Curie temperature by Sr doping in diluted ferromagnetic semiconductor (La1-xSrx)(Zn1-yMny)AsO

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Ferroelectric gate control of Rashba–Dresselhaus spin–orbit coupling in ferromagnetic semiconductor (Zn, Co)O

Theoretical Design and Regulation of Low-Dimensional Spintronics

Cr2TiC2-based Double MXenes: Novel 2D Bipolar Antiferromagnetic Semiconductor with Gate-Controllable Spin Orientation Toward Antiferromagnetic Spintronics.