Emergent Carrier Spin Polarization in (Fe,al)-Codoped Zno Thin Films Explored by Andreev Reflection Spectroscopy

Tongshuai Xu,Xia Gao,Jing Zhang,Liran Shi,Lin Ju,Ting Sun,Xiwei Zhang,Shuanwen Jia,Shishen Yan
DOI: https://doi.org/10.1016/j.jallcom.2024.173602
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:The carrier spin polarization of magnetic materials is one of the most critical elements for current-driven spintronics devices. Experimental evidence of spin polarization of magnetic oxides is still a matter of considerable debate although room-temperature ferromagnetism was reported in nearly all doped/undoped oxides materials. In this work, we systematically study the carrier spin polarization and non-uniform magnetization scattering of Zn1-xFexAl0.01O (x=0.05, 0.10) thin films in metallic regime. Spin polarization 65±8% is confirmed experimentally for Zn0.95Fe0.05Al0.01O by Andreev Reflection spectroscopy, which reduces to 40±5% for Zn0.90Fe0.10Al0.01O as Fe doping level increases to 10%. Magnetoresistance and Anomalous Hall effect are observed in Zn1-xFexAl0.01O films which corroborates the spin-polarized carrier in spin-split bands close to the Fermi level. Furthermore, combining element mapping and Andreev reflection spectra, our results support that non-uniform magnetization of Zn1-xFexAl0.01O films which introduces large inelastic spin-flip scattering at the interface of Zn1-xFexAl0.01O/Pb superconducting junctions, and consequently reduction of spin polarization. The spin-polarized carrier and transport behaviors in Zn1-xFexAl0.01O magnetic oxides provide the reliable evidence to identify the intrinsic ferromagnetism and an excellent platform for spintronics device applications.
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