Electric-controlled Half-Metallicity in Magnetic Van Der Waals Heterobilayer

Cheng Tang,Lei Zhang,Stefano Sanvito,Aijun Du

DOI: https://doi.org/10.1039/d0tc01541e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Electric-field controlled half-metallic transport in CrI3–CrGeTe3 heterobilayers for spintronic applications.

What problem does this paper attempt to address?

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Asif Ilyas,Shuling Xiang,Miaogen Chen,Muhammad Yar Khan,Hua Bai,Pimo He,Yunhao Lu,Renren Deng

DOI: https://doi.org/10.1039/d0nr06054b

IF: 6.7

2021-01-01

Nanoscale

Abstract:The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices. However, using this approach for practical applications remains challenging due to its volatile memory. Herein, we adopt an alternative strategy, where the bistable ferroelectric switches (P up arrow and P down arrow) of Sc2CO2 (SCO) assist the ferromagnetic states of Cr2Ge2Te6 (CGT) in order to achieve non-volatile memories. Moreover, MXene SCO, being an aided layer in multiferroic CGT/SCO hetero-structures, also modifies the electronic properties of CGT to half metal by its polarized P down arrow state. In contrast, the P up arrow state does not change the semiconducting nature of CGT. Hence, non-volatile, electrical-controlled switching of ferromagnetic CGT can be engineered by the two opposite ferroelectric states of single layer SCO. Importantly, the magnetic easy axis of CGT switches from in-plane to out-of-plane when the direction of electric polarization of SCO is altered from P down arrow to P up arrow.
Nonvolatile electrical control of 2D Cr 2 Ge 2 Te 6 and intrinsic half metallicity in multiferroic hetero-structures

Asif Ilyas,Shuling Xiang,Miaogen Chen,Muhammad Yar Khan,Hua Bai,Pimo He,Yunhao Lu,Renren Deng

DOI: https://doi.org/10.1039/d0nr06054b

IF: 6.7

2021-01-01

Nanoscale

Abstract:The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Surface Vacancy-Induced Switchable Electric Polarization and Enhanced Ferromagnetism in Monolayer Metal Trihalides.

Yinghe Zhao,Lingfang Lin,Qionghua Zhou,Yunhai Li,Shijun Yuan,Qian Chen,Shuai Dong,Jinlan Wang

DOI: https://doi.org/10.1021/acs.nanolett.8b00314

IF: 10.8

2018-01-01

Nano Letters

Abstract:Monolayer chromium triiodide (CrI3), as the thinnest ferromagnetic material demonstrated in experiment [Huang et al. Nature 2017, 546, 270], opens up new opportunities for the application of two-dimensional (2D) materials in spintronic nanodevices. Atom-thick 2D materials with switchable electric polarization are now urgently needed for their rarity and important roles in nanoelectronics. Herein, we unveil that surface I vacancies not only enhance the intrinsic ferromagnetism of monolayer CrI3 but also induce switchable electric polarization. I vacancies bring about an out-of-plane polarization without breaking the nonmetallic nature of CrI3. Meanwhile, the induced polarization can be reversed in a moderate energy barrier, arising from the unique porosity of CrI3 that contributes to the switch of I vacancies between top and bottom surfaces. Engineering 2D switchable polarization through surface vacancies is also applicable to many other metal trihalides, which opens up a new and general way toward pursuing low-dimensional multifunctional nanodevices.
Nonvolatile Electric Field Control of Magnetism in Bilayer CrI3 on Monolayer In2Se3

Hai-Xia Cheng,Jun Zhou,Cong Wang,Wei Ji,Yan-Ning Zhang

DOI: https://doi.org/10.1103/physrevb.104.064443

2021-01-01

Abstract:Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Here, via first-principles calculations, we propose a van der Waals (vdW) multiferroic heterostructure composed of a magnetic ${\mathrm{CrI}}_{3}$ bilayer and a ferroelectric \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ monolayer substrate. Interestingly, the interlayer magnetism of bilayer ${\mathrm{CrI}}_{3}$ is switchable between the ferromagnetic and antiferromagnetic coupling by nonvolatile control of the ferroelectric polarization direction of \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$. The interlayer magnetic coupling of ${\mathrm{CrI}}_{3}$ bilayer originates from the direct interaction of adjacent I atoms between ${\mathrm{CrI}}_{3}$ monolayers, which can be tuned by the polarization of ${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$, explaining the electrical control of interlayer magnetic phase transition. Our work demonstrates a multiferroelectric material platform by artificially stacking two dimensional vdW layers, providing an effective method for achieving nonvolatile electrical control of atomic-thin vdW ferromagnets.
Nonvolatile electric field control of magnetism in bilayer CrI 3 on monolayer In 2 Se 3

Hai-Xia Cheng,Jun Zhou,Cong Wang,Wei Ji,Yan-Ning Zhang

DOI: https://doi.org/10.1103/physrevb.104.064443

IF: 3.7

2021-08-26

Physical Review B

Abstract:Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Here, via first-principles calculations, we propose a van der Waals (vdW) multiferroic heterostructure composed of a magnetic CrI3 bilayer and a ferroelectric α-In2Se3 monolayer substrate. Interestingly, the interlayer magnetism of bilayer CrI3 is switchable between the ferromagnetic and antiferromagnetic coupling by nonvolatile control of the ferroelectric polarization direction of α-In2Se3. The interlayer magnetic coupling of CrI3 bilayer originates from the direct interaction of adjacent I atoms between CrI3 monolayers, which can be tuned by the polarization of In2Se3, explaining the electrical control of interlayer magnetic phase transition. Our work demonstrates a multiferroelectric material platform by artificially stacking two dimensional vdW layers, providing an effective method for achieving nonvolatile electrical control of atomic-thin vdW ferromagnets.

physics, condensed matter, applied,materials science, multidisciplinary
Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Yaping Wang,Xinguang Xu,Weixiao Ji,Shengshi Li,Yanlu Li,Xian Zhao

DOI: https://doi.org/10.1038/s41524-023-01178-2

IF: 12.256

2023-12-15

npj Computational Materials

Abstract:Abstract Two-dimensional (2D) XY ferromagnets have drawn pronounced interest in recent years, but the characteristic of easy-plane magnetization restricts their application in spintronics to some extent. Here, we propose a general strategy for constructing multiferroic van der Waals heterostructures, aiming to achieve electrical control over the magnetic anisotropy in 2D XY ferromagnets. The validity of this strategy is verified by the heterostructure composed of ferromagnetic VBi 2 Te 4 and ferroelectric In 2 Se 3 monolayers. By manipulating the polarized states of In 2 Se 3 , the VBi 2 Te 4 can be reversibly transformed between 2D XY and Heisenberg ferromagnets, characterized by the switching of easy magnetization axis between in-plane and out-of-plane directions. More interestingly, accompanied by the changes in magnetic anisotropy, the VBi 2 Te 4 also demonstrates a phase transition from a semiconductor to a half-metal state, which can be ascribed to the band alignment and interfacial charge transfer. The switchable magnetic and electronic properties enable the heterostructure to be utilized in nonvolatile memory and logic devices. Additionally, the half-metallicity and magnetocrystalline anisotropy energy of the heterostructure can be effectively tuned by biaxial strain. These findings not only pave the way for electrically nonvolatile control of 2D XY ferromagnet, but also facilitate the development of interfacial magnetoelectric physics and applications.

materials science, multidisciplinary,chemistry, physical
CrI3/Y2CH2 Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI3 Monolayer Ferromagnets.

Guoqing Wang,Wenjing Qin,Siyuan Wang,Birkneh Sirak Teketel,Weili Yu,Tianyong Luo,Bo Xu,Bin Lin

DOI: https://doi.org/10.1021/acsami.1c01768

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) CrI3 monolayer ferromagnets are key to the development of future miniature spintronic devices and modulating them into a half-metal will greatly expand the application scenarios of CrI3 in nanospintronics. Nevertheless, existing strategies to induce half-metallicity of a CrI3 monolayer remain experimentally challenging and have unstable issues. In this work, the introduction of a 2D electride [Y2C]2+·2e- as an auxiliary layer is shown to be an effective way to achieve the generation of stable half-metallicity in the CrI3 monolayer. When the fully hydrogenated Y2CH2 and ferromagnetic CrI3 monolayer combine to form a heterostructure, surprisingly the appropriate amount of charge injection (0.72 e) turns CrI3 into a half-metal. Hetero-interfacial half-metallicity in CrI3 is an intrinsic one and does not require any chemical functionalization or external physical modification. Therefore, it is advantageous for practical applications of CrI3 in miniature spintronic devices, such as magnetic tunnel junctions, spin valves or spin field-effect transistors. A new strategy of the stable CrI3/Y2CH2 heterostructure was successfully developed to induce the half-metallicity of 2D CrI3 ferromagnets, which is experimentally feasible and half-metallic stable enough. This work paves the way for the application of the CrI3 monolayer in half-metallic-based spintronics.
Electrical control of 2D magnetism in bilayer CrI3

Bevin Huang,Genevieve Clark,Dahlia R. Klein,David MacNeill,Efrén Navarro-Moratalla,Kyle L. Seyler,Nathan Wilson,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Pablo Jarillo-Herrero,Xiaodong Xu

DOI: https://doi.org/10.1038/s41565-018-0121-3

IF: 38.3

2018-04-23

Nature Nanotechnology

Abstract:Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions1–3, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy4–6. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction2,4,7–9. Owing to their unique magnetic properties10–14, the recently reported two-dimensional magnets provide a new system for studying these features15–19. For instance, a bilayer of chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition15,16. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

materials science, multidisciplinary,nanoscience & nanotechnology
Fully Electrically Controlled van der Waals Multiferroic Tunnel Junctions

Xing Yu,Xiwen Zhang,Jinlan Wang

DOI: https://doi.org/10.1021/acsnano.3c08747

IF: 17.1

2023-12-12

ACS Nano

Abstract:The fully electrical control of the magnetic states in magnetic tunnel junctions is highly pursued for the development of the next generation of low-power and high-density information technology. However, achieving this functionality remains a formidable challenge at present. Here we propose an effective strategy by constructing a trilayer van der Waals multiferroic structure, consisting of CrI(3)-AgBiPSe(6) and Cr(2)Ge(2)Te(6)-In(2)Se(3), to achieve full-electrical control of multiferroic...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Efficient Electric Field Control of Magnetic Phase in Bilayer Magnets via interlayer hopping modulation

B. Liu,J. S. Feng,H. J. Xiang,Z. Dai,Zhi-Xin Guo

2024-12-07

Abstract:Two-dimensional (2D) van der Waals (vdW) magnets present a promising platform for spintronic applications due to their unique structural and electronic properties. The ability to electrostatically control their interlayer magnetic coupling between ferromagnetic and antiferromagnetic phases is particularly advantageous for the development of energy-efficient spintronic components. While effective in bilayer CrI3, achieving this control in other 2D magnets remains a challenge. In this work, we demonstrate that bilayer Cr2Ge2Te6 can achieve efficient electrostatic control through interlayer hopping modulation. We show that an external electric field can effectively manipulate the FM-AFM phase transition when interlayer hopping is enhanced by pressure or sliding. We further develop a four-site interlayer hopping model, revealing that the phase transition is driven by a combined effect of on-site energy splitting and interlayer electronic hopping. These findings pave the way for designing novel, electrically tunable spintronic devices, offering substantial potential for energy-efficient information processing and storage.

Mesoscale and Nanoscale Physics,Materials Science
Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Wen-ning Ren,Kui-juan Jin,Jie-su Wang,Chen Ge,Er-Jia Guo,Cheng Ma,Can Wang,Xiulai Xu

DOI: https://doi.org/10.1038/s41598-021-82394-y

IF: 4.6

2021-02-02

Scientific Reports

Abstract:Abstract The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr 2 Ge 2 Te 6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr 2 Ge 2 Te 6 . These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.

multidisciplinary sciences
Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Wen-ning Ren,Kui-juan Jin,Jie-su Wang,Chen Ge,Er-Jia Guo,Cheng Ma,Can Wang,Xiulai Xu

DOI: https://doi.org/10.1038/s41598-021-82394-y

IF: 4.6

2021-01-01

Scientific Reports

Abstract:The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr 2 Ge 2 Te 6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr 2 Ge 2 Te 6 . These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.
Electrostatic doping tunable magnetic transition and half-metallicity in the monolayer CrCTe 3

Linlin Liu,Peng Jiang,Hong-Mei Huang,Yanling Li

DOI: https://doi.org/10.1088/1361-648x/ad5094

2024-05-25

Journal of Physics Condensed Matter

Abstract:The electrical manipulation of the magnetic transition and spinpolarized states has attracted extensive attention in the field of spintronics. In this work, we perform a detailed study on the electronic and magnetic properties of the carrier-doped monolayer CrCTe 3 by using first-principles calculation. It is found that, the magnetic transition from Néel-antiferomagnetic (nAFM) to ferromagnetic (FM) is observed in the case of the electron doping, while for hole doping a magnetic transition sequence of nAFM → zigzag-AFM → FM is observed in the monolayer CrCTe 3 . Interestingly, the carrier doping induced FM ground state always exhibits half-metallicity with full spin polarization. Moreover, the spin polarity of the half-metallic electronic states is opposite for electron and hole doping, meaning that the spin polarization direction can be tuned by manipulating a gate voltage. The Monte Carlo calculations show that the magnetic transition temperature of the doped FM CrCTe 3 is rapidly increased with the increasing doping concentration and is extremely expected to achieve room temperature at a suitable doping concentration. These findings demonstrate that the monolayer AFM system possesses a potential application in spintronic devices with electrically tunable spin polarization.

physics, condensed matter
Selectively Controlled Ferromagnets by Electric Fields in Van Der Waals Ferromagnetic Heterojunctions

Zi-Ao Wang,Weishan Xue,Faguang Yan,Wenkai Zhu,Yi Liu,Xinhui Zhang,Zhongming Wei,Kai Chang,Zhe Yuan,Kaiyou Wang

DOI: https://doi.org/10.1021/acs.nanolett.2c04796

IF: 10.8

2023-01-01

Nano Letters

Abstract:Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface is formed. The recently discovered van der Waals ferromagnets with atomically sharp interfaces provided a perfect platform for the electrical control of interfacial charge transfer. Here, we report magnetoresistance experiments revealing electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the switching fields of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 is revealed by first-principles calculations, which remarkably modifies the magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of magnetism demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets. KEYWORDS: controllable coercivity, charge transfer, Cr2Ge2Te6, Fe3GeTe2, van der Waals heterostructure
Two-dimensional half-metallicity in transition metal atoms decorated Cr2Ge2Te6

Wei Kang,Xue Du,Jintian Wang,Ziqin Ye,Jinghong Zhao,Wei Wang,Yan Wang,Lin Wang,Xiaoqing Liu

DOI: https://doi.org/10.3389/fphy.2023.1188513

IF: 3.718

2023-04-07

Frontiers in Physics

Abstract:As one of the first experimentally found and naturally stable two-dimensional (2D) ferromagnetic materials, the monolayer Cr 2 Ge 2 Te 6 has garnered great interest due to its potential hires in electronics and spintronics. Yet, the Curie temperature of monolayer Cr 2 Ge 2 Te 6 is lower than the ambient temperature, severely restricting the creation of valuable devices. Using the first-principle calculations, we explored how the adsorption of 3 d transition metals affects the electronic and magnetic properties of the monolayer Cr 2 Ge 2 Te 6 (from Sc to Zn). Our findings indicate that depending on the 3 d transition metals to be adsorbed, the electronic properties of the Cr 2 Ge 2 Te 6 adsorption system may be adjusted from semiconductor to metal/half-metal. We found that the adsorption of Ti and Fe leads to a transformation from semiconductor to metal. While in Cr 2 Ge 2 Te 6 @Sc, V, Co, Ni, and Cu, the absorption realizes the changes from semiconductor to half metal. Moreover, adsorption may modify the magnetic moment and Curie temperature of the adsorbed system to enhance the ferromagnetic stability of the monolayer Cr 2 Ge 2 Te 6 . Furthermore, we are able to modulate the half-metallic of Cr 2 Ge 2 Te 6 @Mn by means of electric fields. Hence, adsorption is a viable method for modulating the ferromagnetic half-metallic of 2D ferromagnets, paving the door for the future development of nano-electronic and spintronic devices with enhanced performance for 2D ferromagnetic materials.

physics, multidisciplinary
Doping Enhanced Ferromagnetism and Induced Half-Metallicity in CrI 3 Monolayer

Hongbo Wang,Fengren Fan,Shasha Zhu,Hua Wu

DOI: https://doi.org/10.1209/0295-5075/114/47001

2016-01-01

Europhysics Letters

Abstract:Two-dimensional materials are of current great interest for their promising applications to postsilicon microelectronics. Here we study, using first-principles calculations and a Monte Carlo simulation, the electronic structure and magnetism of CrI3 monolayer, whose bulk material is an interesting layered ferromagnetic (FM) semiconductor. Our results show that CrI3 monolayer remains FM with T-C similar to 75K, and the FM order is due to a superexchange in the near-90 degrees Cr-I-Cr bonds. Moreover, we find that an itinerant magnetism could be introduced by carriers doping. Both electron doping and hole doping would render CrI3 monolayer half-metallic, and steadily enhance the FM stability. In particular, hole doping is three times as fast as electron doping in increasing T-C, and a room temperature FM half-metallicity could be achieved in CrI3 monolayer via a half-hole doping. Therefore, CrI3 monolayer would be an appealing two-dimensional spintronic material. Copyright (C) EPLA, 2016
Proposed Mechanical Method for Switching the Spin Transport Channel in Two-Dimensional Magnetic Metal-Magnetic Semiconductor Van Der Waals Contacts.

Pengfei Gao,Xingxing Li,Jinlong Yang

DOI: https://doi.org/10.1039/d0nh00289e

2020-01-01

Nanoscale Horizons

Abstract:Developing simple nonmagnetic methods to efficiently control spin transport across magnetic metal-magnetic semiconductor contacts plays a key role in developing high-performance nano-spintronic devices, since a magnetic field is hard to apply locally. For this purpose, based on first principles calculations, we here propose a mechanical means for manipulating the spin transport across two-dimensional magnetic metal-magnetic semiconductor van der Waals contacts formed between representative metallic Fe3GeTe2 and semiconducting CrGeTe3/CrI3 nanosheets. For such contacts, there exist four spin resolved Schottky barriers, i.e. the n/p-type Schottky barriers in the up/down spin channels, in which the dominant transport spin channel, characterized by the lowest Schottky barrier, can be selectively switched by regulating the magnetic coupling between the magnetic metal and magnetic semiconductor via interfacial sliding. In this way, single spin channel ohmic contacts with reversible spin polarization have been realized.
Excellent spin diode and spin-dependent Seebeck effects in hetero-junctions based on ferromagnetic Cr 3 M 4 (M = Se, Te)

Qihong Wu,Wenqiu Shang,Cong Wang,Dandan Wu,Jie Li,Guangqian Ding

DOI: https://doi.org/10.1088/1361-6463/ad1b31

2024-01-19

Abstract:Abstract Ferromagnetic (FM) half-metals have been regarded as the most promising candidates for spin injection into semiconductors due to their completely spin-polarized electronic states around the Fermi level. To explore the potential application of Cr 3 M 4 (M = Se, Te) in spintronic devices, which are experimentally synthesized FM bulks as well as half-metallic monolayers with high Curie temperature, we propose to design a Bi 2 Se 3 /Cr 3 Se 4 van der Waals hetero-junction and a 2D Cr 3 S 4 /Cr 3 Te 4 hetero-junction motivated by the recent report on controlling synthesis of Cr x M y based heterostructures. First-principles calculations combined with non-equilibrium Green’s function uncover the perfect spin filtering and spin diode effect in Bi 2 Se 3 /Cr 3 Se 4 van der Waals hetero-junction. More interestingly, the Cr 3 S 4 /Cr 3 Te 4 hetero-junction shows an excellent spin-dependent Seebeck effect, in which spin-dependent currents with opposite spin orientation can be driven by a temperature gradient to flow in the opposite transport direction. These effects can be understood from the calculated spin-dependent band structures and transmission spectrum. Our results put forward a promising designing and application of spintronic devices based on Cr 3 M 4 (M = Se, Te) FM materials.

physics, applied
CrI 3 /Y 2 CH 2 Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI 3 Monolayer Ferromagnets

Guoqing Wang,Wenjing Qin,Siyuan Wang,Birkneh Sirak Teketel,Weili Yu,Tianyong Luo,Bo Xu,Bin Lin

DOI: https://doi.org/10.1021/acsami.1c01768

2021-04-05

Abstract:Two-dimensional (2D) CrI3 monolayer ferromagnets are key to the development of future miniature spintronic devices and modulating them into a half-metal will greatly expand the application scenarios of CrI3 in nanospintronics. Nevertheless, existing strategies to induce half-metallicity of a CrI3 monolayer remain experimentally challenging and have unstable issues. In this work, the introduction of a 2D electride [Y2C]2+·2e– as an auxiliary layer is shown to be an effective way to achieve the generation of stable half-metallicity in the CrI3 monolayer. When the fully hydrogenated Y2CH2 and ferromagnetic CrI3 monolayer combine to form a heterostructure, surprisingly the appropriate amount of charge injection (0.72 e) turns CrI3 into a half-metal. Hetero-interfacial half-metallicity in CrI3 is an intrinsic one and does not require any chemical functionalization or external physical modification. Therefore, it is advantageous for practical applications of CrI3 in miniature spintronic devices, such as magnetic tunnel junctions, spin valves or spin field-effect transistors. A new strategy of the stable CrI3/Y2CH2 heterostructure was successfully developed to induce the half-metallicity of 2D CrI3 ferromagnets, which is experimentally feasible and half-metallic stable enough. This work paves the way for the application of the CrI3 monolayer in half-metallic-based spintronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c01768?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c01768</a>.The DOS, band structure, Fermi surface, ELF map, and phonon dispersion of Y2C, CrI3, Y2CH1, Y2CH2 monolayer, bilayer Y2C, and bilayer Y2CH1 and CrI3/Y2C-based heterostructure performance in this work (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c01768/suppl_file/am1c01768_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Zhi Wang,Tongyao Zhang,Mei Ding,Baojuan Dong,Yanxu Li,Maolin Chen,Xiaoxi Li,Jianqi Huang,Hanwen Wang,Xiaotian Zhao,Yong Li,Da Li,Chuankun Jia,Lidong Sun,Huaihong Guo,Yu Ye,Dongming Sun,Yuansen Chen,Teng Yang,Jing Zhang,Shimpei Ono,Zheng Han,Zhidong Zhang

DOI: https://doi.org/10.1038/s41565-018-0186-z

IF: 38.3

2018-07-01

Nature Nanotechnology

Abstract:Manipulating a quantum state via electrostatic gating has been of great importance for many model systems in nanoelectronics. Until now, however, controlling the electron spins or, more specifically, the magnetism of a system by electric-field tuning has proven challenging1–4. Recently, atomically thin magnetic semiconductors have attracted significant attention due to their emerging new physical phenomena5–13. However, many issues are yet to be resolved to convincingly demonstrate gate-controllable magnetism in these two-dimensional materials. Here, we show that, via electrostatic gating, a strong field effect can be observed in devices based on few-layered ferromagnetic semiconducting Cr2Ge2Te6. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate bipolar tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment rebalance in the spin-polarized band structure. Our findings of electric-field-controlled magnetism in van der Waals magnets show possibilities for potential applications in new-generation magnetic memory storage, sensors and spintronics.

materials science, multidisciplinary,nanoscience & nanotechnology

Electric-controlled Half-Metallicity in Magnetic Van Der Waals Heterobilayer

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Nonvolatile electrical control of 2D Cr 2 Ge 2 Te 6 and intrinsic half metallicity in multiferroic hetero-structures

Surface Vacancy-Induced Switchable Electric Polarization and Enhanced Ferromagnetism in Monolayer Metal Trihalides.

Nonvolatile Electric Field Control of Magnetism in Bilayer CrI3 on Monolayer In2Se3

Nonvolatile electric field control of magnetism in bilayer CrI 3 on monolayer In 2 Se 3

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

CrI3/Y2CH2 Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI3 Monolayer Ferromagnets.

Electrical control of 2D magnetism in bilayer CrI3

Fully Electrically Controlled van der Waals Multiferroic Tunnel Junctions

Efficient Electric Field Control of Magnetic Phase in Bilayer Magnets via interlayer hopping modulation

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Electrostatic doping tunable magnetic transition and half-metallicity in the monolayer CrCTe 3

Selectively Controlled Ferromagnets by Electric Fields in Van Der Waals Ferromagnetic Heterojunctions

Two-dimensional half-metallicity in transition metal atoms decorated Cr2Ge2Te6

Doping Enhanced Ferromagnetism and Induced Half-Metallicity in CrI 3 Monolayer

Proposed Mechanical Method for Switching the Spin Transport Channel in Two-Dimensional Magnetic Metal-Magnetic Semiconductor Van Der Waals Contacts.

Excellent spin diode and spin-dependent Seebeck effects in hetero-junctions based on ferromagnetic Cr 3 M 4 (M = Se, Te)

CrI 3 /Y 2 CH 2 Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI 3 Monolayer Ferromagnets

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor