Abstract:In this work an extensive characterization over XeCl multishot laser irradiation was performed at different energy densities and with different thicknesses of graphitic coating superimposed on P and Al implanted 4H–SiC epitaxial layers. It was noted that at 0.6 J/cm2 the 180 nm coating provides a smooth surface unlike lower thicknesses or uncoated treatments. The μ-Raman investigation showed the crystalline quality as a function of the energy density. Through Medium Angle Annular Dark Field-Scanning Transmission Electron Microscopy (MAADF-STEM) and High Angle Annular Dark Field (HAADF)-STEM investigations, the absence of extended defects and the presence of regions with higher density of carbon interstitials (C i ) was revealed. Circular Transfer Length Method (CTLM) measurements demonstrated how irradiation at 0.9 J/cm2 succeeded to reach values of (7.28 ± 1.15) × 102 Ω/sq, lower than the findings achieved with furnace treatment at 1650 °C. However, electrical characterization carried out through μ-Raman investigation over the Folded Transverse Acoustic (FTA) modes showed consistent activation of the order of 7 × 1019 cm−3 at 0.6 J/cm2 while exhibited CTLM extracted sheet resistance of (3.17 ± 0.06) × 104 Ω/sq. Therefore, this work highlights the contrast between fast processes as the accommodation and ionization of dopant atoms in substitutional positions and slow processes such as the recovery of ion implantation damage. By offering faster processing rates, lower thermal budgets, and high spatial control over the annealing process, laser annealing on 4H–SiC as a post-implantation thermal treatment approach presents several advantages over conventional annealing methods. This study marks a significant progress in comprehending and improving the effectiveness of laser annealing on 4H–SiC.

Recrystallization of 75as Implanted Silicon by a Free Running Ruby Laser

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

[30-years of sport medicine and rehabilitation].

Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Optical properties of excimer laser annealed polycrystalline Si by spectroscopic ellipsometry

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

Laser Crystallization and Dopant Activation for a-Si:H Film in Carrier-Selective Contacts for Silicon Solar cells

Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing