Multiple Exciton Generation in Silicon Nanocrystals

pingrong yu,kelly p knutsen,matthew c beard,arthur j nozik,randy j ellingson,joseph m luther,qing song

DOI: https://doi.org/10.1364/fio.2007.sme2

2007-01-01

Abstract:We report the threshold for multiple exciton generation (MEG) in silicon nanocrystals is approximately 2.5 times the effective bandgap, Eg, and 2.7 excitons are produced per absorbed photon at 3.3 Eg.

What problem does this paper attempt to address?

Multiple exciton generation in colloidal silicon nanocrystals.

Matthew C. Beard,Kelly P. Knutsen,Pingrong Yu,Joseph M. Luther,Qing Song,Wyatt K. Metzger,Randy J. Ellingson,Arthur J. Nozik

DOI: https://doi.org/10.1021/nl071486l

IF: 10.8

2007-01-01

Nano Letters

Abstract:Multiple exciton generation (MEG) is a process whereby multiple electron-hole pairs, or excitons, are produced upon absorption of a single photon in semiconductor nanocrystals (NCs) and represents a promising route to increased solar conversion efficiencies in single-junction photovoltaic cells. We report for the first time MEG yields in colloidal Si NCs using ultrafast transient absorption spectroscopy. We find the threshold photon energy for MEG in 9.5 nm diameter Si NCs (effective band gap equivalent to E-g = 1.20 eV) to be 2.4 +/- 0.1E(g) and find an exciton-production quantum yield of 2.6 +/- 0.2 excitons per absorbed photon at 3.4E(g). While MEG has been previously reported in direct-gap semiconductor NCs of PbSe, PbS, PbTe, CdSe, and InAs, this represents the first report of MEG within indirect-gap semiconductor NCs. Furthermore, MEG is found in relatively large Si NCs (diameter equal to about twice the Bohr radius) such that the confinement energy is not large enough to produce a large blue-shift of the band gap (only 80 meV), but the Coulomb interaction is sufficiently enhanced to produce efficient MEG. Our findings are of particular importance because Si dominates the photovoltaic solar cell industry, presents no problems regarding abundance and accessibility within the Earth's crust, and poses no significant environmental problems regarding toxicity.
Multiple Exciton Generation in SiGe Nanoclusters: A Numerical Study

Mahdi Gordi,Mohammad K. Moravvej‐Farshi

DOI: https://doi.org/10.1002/pssr.201800407

2018-10-21

Abstract:The multiple exciton generation (MEG) in Si(0≤x≤7)Ge(7−x) nanoclusters using the equation‐of‐motion coupled‐cluster (EOM‐CCSD) method has been studied here. Simulation results indicate that the energy normalized to the optical bandgap, at which the absorptivity profile peaks, depends on the elemental structure of the nanocluster (NC). Moreover, the results show that the larger the number of Si atoms (x) in the NC, the larger the normalized MEG threshold to the optical energy gap (ETh), and the larger the optical absorption cross section. As an example, the maximum absorptivity in Si7Ge0 nanocluster is about 2.37 times that in Si0Ge7, and ETh for the former NC is larger than that of the latter. Hence, the superior optical absorptivity of Si7 shows, despite its larger normalized MEG threshold, it is the most desirable option for the MEG process in light‐harvesting devices, including solar cells. This is contrary to the concluding remark in our previous study that was made solely on the basis of comparing the normalized MEG thresholds. In multiple exciton generation (MEG), absorption of a photon in a given condition can lead to the production of more than one exciton. Simulations show that by increasing the percentage of silicon in the SiGe nanocluster, a blue shift is seen in the absorption spectrum and the normalized MEG threshold to the optical energy as well as optical absorption increases.

physics, condensed matter, applied,materials science, multidisciplinary
Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

B F P McVey,D König,X Cheng,P B O'Mara,P Seal,X Tan,H A Tahini,S C Smith,J J Gooding,R D Tilley

DOI: https://doi.org/10.1039/c8nr05071f

IF: 6.7

2018-01-01

Nanoscale

Abstract:The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential. For the first time, we report multiple emission pathways in semiconductor nanocrystals (NCs) where the number of emission pathways desired is controlled by the number of dopant atoms per quantum dot. The origin of additional emission pathways is explained by interactions between dopant states and NC energy levels. Density functional theory (DFT) calculations of undoped 2.3 nm silicon (Si NCs) and the same NCs doped with 2 interstitial Cu atoms show good agreement to experiment. Such calculations provide valuable data to explain the changes in optical transitions due to the Cu dopant in terms of transition energies, quantum yield and dopant position as a function of dopants per NC. Changes in the optical properties of Si NCs induced by dopant concentration include extended excitation range and enhanced absorption coefficients, emission redshifts of up to 60 nm, and a two-fold increase in quantum yields up to 22%. The optical properties of doped NCs lead to significant bioimaging improvements illustrated by in vitro cell imaging, including redshifted excitation wavelengths away from natural autofluorescence and enhanced fluorescent signals.
Extended Storage of Multiple Excitons in Trap States of Semiconductor Nanocrystals

Qinfeng Xu,Xiangnan Huang,Zheng Hua,Lian Hu,Lingxiao Du,Huizhen Wu,Chunfeng Zhang,Xiaoyong Wang,Min Xiao

DOI: https://doi.org/10.1063/1.4943367

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Owing to the Auger recombination effect, multiple excitons (MEs) in semiconductor nanocrystals (NCs) are dissipated nonradiatively at the sub-nanosecond time scale, which sets a stringent limit on the time window within which one can operate with them. Here, we show that this issue can be resolved by utilizing an intrinsic energy transfer system in CdSe NCs, where MEs created in the donor quantized states can be effectively extracted to the acceptor trap states. This was evidenced by the step-like increase in the intensity and the apparent decrease in the rise time of the trap-state photoluminescence with the elevated laser excitation power. With the radiative lifetime being tens of nanoseconds for the trap states, extended storage of MEs has been achieved and marks a crucial step towards flexible manipulations of their optoelectronic properties.
Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Efficiency of the coherent biexciton admixture mechanism for multiple exciton generation in InAs nanocrystals

P. Kowalski,P. Machnikowski

DOI: https://doi.org/10.1088/0268-1242/30/12/125009

2015-06-24

Abstract:We study the coherent mixing between two-particle (single exciton) and four-particle (biexciton) states of a semiconductor nanocrystal resulting from the coulomb coupling between states with different numbers of electron-hole pairs. Using a simple model of the nanocrystal wave functions and an envelope function approach, we estimate the efficiency of the multiple exciton generation (MEG) process resulting from such coherent admixture mechanism, including all the relevant states in a very broad energy interval. We show that in a typical ensemble of nanocrystals with 3~nm average radius, the onset of the MEG process appears about 1~eV above the lower edge of the biexciton density of states and the efficiency of the process reaches 50\% for photon energies around 5~eV. The MEG onset shifts to lower energies and the efficiency increases as the radius grows. We point out that the energy dependence of the MEG efficiency differs considerably between ensembles with small and large inhomogeneity of nancrystal sizes.

Mesoscale and Nanoscale Physics
Direct biexciton generation in Si nanocrystal by a single photon

Sergey Fomichev,Vladimir Burdov

2023-12-06

Abstract:It has been shown theoretically that strong quantum confinement regime in Si nanocrystals promotes the highly efficient simultaneous excitation of two electron-hole pairs (biexciton) by a single photon. The rate (inverse lifetime) of biexciton generation has been calculated analytically as function of the nanocrystal radius. In contrast to the case of a nanocrystal formed of direct-band-gap semiconductor, the size-dependence of the rate in Si nanocrystal turns out to be sharp enough. At radii approaching a nanometer, the lifetime of biexciton generation falls into the nanosecond range.

Mesoscale and Nanoscale Physics
Excitons in Silicon Nanocrystalites: The Nature of Luminescence

Eleonora Luppi,Federico Iori,Rita Magri,Olivia Pulci,Stefano Ossicini,Elena Degoli,Valerio Olevano

DOI: https://doi.org/10.48550/arXiv.0707.3113

2007-07-20

Materials Science

Abstract:The absorption and emission spectra of silicon nanocrystals up to 1 nm diameter including geometry optimization and the many-body effects induced by the creation of an electron-hole pair have been calculated within a first-principles framework. Starting from hydrogenated silicon clusters of different size, different Si/O bonding at the cluster surface have been considered. We found that the presence of a Si-O-Si bridge bond originates significative excitonic luminescence features in the visible range that are in fair agreement with the experimental outcomes.
Highly Efficient Multiple Exciton Generation In Colloidal Pbse And Pbs Quantum Dots

Rj Ellingson,Mc Beard,Jc Johnson,Pr Yu,Oi Micic,Aj Nozik,A Shabaev,Al Efros

DOI: https://doi.org/10.1021/nl0502672

IF: 10.8

2005-01-01

Nano Letters

Abstract:We report ultra-efficient multiple exciton generation (MEG) for single photon absorption in colloidal PbSe and PbS quantum dots (QDs). We employ transient absorption spectroscopy and present measurement data acquired for both intraband as well as interband probe energies. Quantum yields of 300% indicate the creation, on average, of three excitons per absorbed photon for PbSe QDs at photon energies that are four times the QD energy gap. Results indicate that the threshold photon energy for MEG in QDs is twice the lowest exciton absorption energy. We find that the biexciton effect, which shifts the transition energy for absorption of a second photon, influences the early time transient absorption data and may contribute to a modulation observed when probing near the lowest interband transition. We present experimental and theoretical values of the size-dependent interband transition energies for PbSe QDs. We present experimental and theoretical values of the size-dependent interband transition energies for PbSe QDs, and we also introduce a new model for MEG based on the coherent superposition of multiple excitonic states.
Theory of multiexciton generation in semiconductor nanocrystals

Eran Rabani,Roi Baer

DOI: https://doi.org/10.1016/j.cplett.2010.07.059

2010-07-07

Abstract:We develop a generalized framework based on a Green's function formalism to calculate the efficiency of multiexciton gen-eration in nanocrystal quantum dots. The direct/indirect absorption and coherent/incoherent impact ionization mechanisms, often used to describe multiexciton generation in nanocrystals, are reviewed and rederived from the unified theory as certain approximations. In addition, two new limits are described systematically - the weak Coulomb coupling limit and the semi-wide band limit. We show that the description of multiexciton generation in nanocrystals can be described as incoherent process and we discuss the scaling of multiexciton generation with respect to the photon energy and nanocrystal size. Illustrations are given for three prototype systems: CdSe, InAs and silicon quantum dots.

Mesoscale and Nanoscale Physics,Materials Science
Multiexciton Annihilation and Dissociation in Quantum Confined Semiconductor Nanocrystals.

Haiming Zhu,Ye Yang,Tianquan Lian

DOI: https://doi.org/10.1021/ar300202d

IF: 24.466

2012-01-01

Accounts of Chemical Research

Abstract:Recent reports of multiexciton generation (MEG), a process by which one absorbed photon generates multiple excitons, in lead chalcogenide nanocrystals (NCs) have intensified research interest in using this phenomenon to improve the efficiency of solar energy conversion. Practical implementation of MEG processes in solar cells and solar-to-fuel conversion devices requires the development of materials with higher MEG efficiencies and lower excitation thresholds than are currently available, as well as schemes for efficient multiexciton extraction before the ultrafast exciton-exciton annihilation occurs. This Account focuses on the extraction of multiexcitons by interfacial electron transfer in model NC-molecular acceptor complexes. We provide an overview of multiexciton annihilation and multiexciton dissociation (MED) processes in NC-acceptor complexes of (i) CdSe quantum dots (QDs), (ii) CdSe/CdS quasi-type II core/shell QDs, (iii) CdSe quantum confined nanorods (QRs), and (iv) PbS QDs. We show that ultrafast electron transfer to adsorbed molecular acceptors can efficiently dissociate multiexcitons generated by absorption of multiple photons in (i), (ii), and (iii). Compared to core-only CdSe QDs, the electron hole distributions in CdSe/CdS quasi-type II QDs and CdSe QRs significantly improve their MED efficiencies by simultaneously retarding Auger recombination and facilitating interfacial electron transfer. Finally, in PbS-methylene blue (MB(+)) complexes, we show that the presence of electron acceptors does not affect the MEG efficiency and electron transfer to MB(+) efficiently dissociates the multiple excitons generated in PbS QDs. Our findings demonstrate that ultrafast interfacial charge transfer can be an efficient approach for extracting multiexcitons, and wavefunction engineering in quantum confined NCs can further improve MED efficiency.
Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Hao Shen,Huabao Shang,Yuhan Gao,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.3390/ma15031093

IF: 3.4

2022-01-01

Materials

Abstract:In this study, we prepare Erbium compound nanocrystals and Si nanocrystal (Si NC) co-embedded silica film by the sol-gel method. Dual phases of Si and Er chloride silicate (ECS) nanocrystals were coprecipitated within amorphous silica. Effective sensitized emission of Er chloride silicate nanocrystals was realized via interparticle energy transfer between silicon nanocrystal and Er chloride silicate nanocrystals. The influence of density and the distribution of sensitizers and Er compounds on interparticle energy transfer efficiency was discussed. The interparticle energy transfer between the semiconductor and erbium compound nanocrystals offers some important insights into the realization of efficient light emission for silicon-based integrated photonics.
Time Dependent Study of Multiple Exciton Generation in Nanocrystal Quantum Dots

Fikeraddis A. Damtie,Andreas Wacker

DOI: https://doi.org/10.1088/1742-6596/696/1/012012

2016-01-04

Abstract:We study the exciton dynamics in an optically excited nanocrystal quantum dot. Multiple exciton formation is more efficient in nanocrystal quantum dots compared to bulk semiconductors due to enhanced Coulomb interactions and the absence of conservation of momentum. The formation of multiple excitons is dependent on different excitation parameters and the dissipation. We study this process within a Lindblad quantum rate equation using the full many-particle states. We optically excite the system by creating a single high energy exciton $E_{SX}$ in resonance to a double exciton $E_{DX}$. With Coulomb electron-electron interaction, the population can be transferred from the single exciton to the double exciton state by impact ionisation (inverse Auger process). The ratio between the recombination processes and the absorbed photons provide the yield of the structure. We observe a quantum yield of comparable value to experiment assuming typical experimental conditions for a $4$ nm PbS quantum dot.

Mesoscale and Nanoscale Physics
Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Lingbo Xu,Lu Jin,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1063/1.4818130

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Indirect excitation of Er3+ ions via energy transfer from silicon nano-clusters (Si-NCs) is demonstrated in silicon rich oxynitride films with different Si excess concentrations. Excess Si shows competitive effects on Er3+ luminescence. It could enhance the Er3+ emission efficiency while it degrades the energy transfer efficiency and density of optically active Er3+ ions at the same time. Furthermore, coalescence of Si-NCs is observed in the samples with high Si excess concentrations, reducing the density of sensitizers and their coupling with Er.
Plasmonic multiple exciton generation

Jiantao Kong,Xueyuan Wu,Xin Wang,Michael J Naughton,Krzysztof Kempa

DOI: https://doi.org/10.1103/PhysRevMaterials.3.065201

2018-06-27

Abstract:We show that bi-exciton formation can be highly efficient in a solar cell with the semiconductor absorber filled with an array of metallic nanoparticles having plasmonic resonance tuned to the semiconductor gap energy. This process can be viewed as plasmon-enhanced multiple exciton generation (PMEG), with the resulting cell efficiency exceeding the Shockley-Queisser limit. We demonstrate, that efficiency of the PMEG process, increases with decreasing of the semiconductor gap size, and illustrate that by considering in detail three systems with gradually decreasing gap size: GaAs, Si and Ge.

Materials Science
Field-effect electroluminescence in silicon nanocrystals

Robert J. Walters,George I. Bourianoff,Harry A. Atwater

DOI: https://doi.org/10.1038/nmat1307

IF: 41.2

2005-01-23

Nature Materials

Abstract:There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon1,2. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection3,4,5,6,7,8. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Multiple Dark Excitons in Semiconductor CdSe Nanocrystals

Yan Lv,Xiangnan Huang,Chunfeng Zhang,Xiaoyong Wang,Min Xiao

DOI: https://doi.org/10.1021/acs.jpcc.8b06826

2018-01-01

Abstract:When excited with a low laser power, the dark excitons in semiconductor CdSe nanocrystals (NCs) are associated with a long radiative lifetime at the cryogenic temperature. With the increasing laser excitation power, there additionally appears a fast lifetime component that signifies the effective generation of multiple dark excitons. Similar to the case of multiple bright excitons, the Auger recombination of multiple dark excitons in large-sized CdSe NCs is greatly suppressed to render them a highly emissive nature. The introduction of multiple dark excitons to the current studies of semiconductor CdSe NCs will surely promote various potential applications such as in high-capacity energy storage and low-threshold optoelectronic lasing.
Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

S. Oda,S. Y. Huang,M. A. Salem,D. Hippo,H. Mizuta

DOI: https://doi.org/10.1016/j.physe.2006.12.049

2007-01-01

Abstract:Monodispersed silicon nanocrystals show novel electrical and optical characteristics of silicon quantum dots, such as single-electron tunneling, ballistic electron transport, visible photoluminescence and high-efficiency electron emission. Single-electron memory effects have been studied using a short-channel MOSFET incorporating Si quantum dots as a floating gate. Surface nitridation of Si nanocrystal memory nodes extends the charge-retention time significantly. Single-electron storage in individual Si dots has been evaluated by Kelvin probe force microscopy.Photoluminescence and electron emission are observed for surface-oxidized silicon nanocrystals. Efficiency of the no-phonon-assisted transition increases with decreasing core Si size. Electron emission efficiency as high as 5% has been achieved for the Si-nanocrystal-based cold electron emitter devices. The non-Maxwellian energy distribution of emitted electrons suggests that the mechanism of electron emission is due to ballistic transport through arrays of surface-oxidized Si nanocrystals. Combined with the ballistic electron emission, the quasi-direct light emission properties can be used for developing Si-based lasers. (C) 2007 Elsevier B.V. All rights reserved.
Multiple exciton generation in VO2

S. R. Sahu,S. Khan,A. Tripathy,K. Dey,N. Bano,S. Raj Mohan,M. P. Joshi,S. Verma,B. T. Rao,V. G. Sathe,D. K. Shukla

DOI: https://doi.org/10.1103/PhysRevB.108.125133

2023-10-23

Abstract:Multiple exciton generation (MEG) is a widely studied phenomenon in semiconductor nanocrystals and quantum dots, aimed at improving the energy conversion efficiency of solar cells. MEG is the process wherein incident photon energy is significantly larger than the band gap, and the resulting photoexcited carriers relax by generating additional electron-hole pairs, rather than decaying by heat dissipation. Here, we present an experimental demonstration of MEG in a prototype strongly correlated material, VO2, through photocurrent spectroscopy and ultrafast transient reflectivity measurements, both of which are considered the most prominent ways for detecting MEG in working devices. The key result of this paper is the observation of MEG at room temperature (in a correlated insulating phase of VO2), and the estimated threshold for MEG is 3Eg. We demonstrate an escalated photocurrent due to MEG in VO2, and quantum efficiency is found to exceed 100%. Our studies suggest that this phenomenon is a manifestation of expeditious impact ionization due to stronger electron correlations and could be exploited in a large number of strongly correlated materials.

Strongly Correlated Electrons
Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride

Narumi Nagaya,Alexandra Alexiu,Collin F. Perkinson,Oliver M. Nix,Moungi G. Bawendi,William A. Tisdale,Troy Van Voorhis,Marc A. Baldo

2024-10-05

Abstract:Singlet exciton fission has the potential to increase the efficiency of crystalline silicon solar cells beyond the conventional single junction limit. Perhaps the largest obstacle to achieving this enhancement is uncertainty about energy coupling mechanisms at the interfaces between silicon and exciton fission materials such as tetracene. Here, the previously reported silicon-hafnium oxynitride-tetracene structure is studied and a combination of magnetic-field-dependent silicon photoluminescence measurements and density functional theory calculations is used to probe the influence of the interlayer composition on the triplet transfer process across the hafnium oxynitride interlayer. It is found that hafnium oxide interlayers do not show triplet exciton sensitization of silicon, and that nitrogen content in hafnium oxynitride layers is correlated with enhanced sensitization. Calculation results reveal that defects in hafnium oxynitride interlayers with higher nitrogen content introduce states close to the band-edge of silicon, which can mediate the triplet exciton transfer process. Some defects introduce additional deleterious mid-gap states, which may explain observed silicon photoluminescence quenching. These results show that band-edge states can mediate the triplet exciton transfer process, potentially through a sequential charge transfer mechanism.

Materials Science,Chemical Physics

Multiple Exciton Generation in Silicon Nanocrystals

Multiple exciton generation in colloidal silicon nanocrystals.

Multiple Exciton Generation in SiGe Nanoclusters: A Numerical Study

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Extended Storage of Multiple Excitons in Trap States of Semiconductor Nanocrystals

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Efficiency of the coherent biexciton admixture mechanism for multiple exciton generation in InAs nanocrystals

Direct biexciton generation in Si nanocrystal by a single photon

Excitons in Silicon Nanocrystalites: The Nature of Luminescence

Highly Efficient Multiple Exciton Generation In Colloidal Pbse And Pbs Quantum Dots

Theory of multiexciton generation in semiconductor nanocrystals

Multiexciton Annihilation and Dissociation in Quantum Confined Semiconductor Nanocrystals.

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Time Dependent Study of Multiple Exciton Generation in Nanocrystal Quantum Dots

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Plasmonic multiple exciton generation

Field-effect electroluminescence in silicon nanocrystals

Multiple Dark Excitons in Semiconductor CdSe Nanocrystals

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Multiple exciton generation in VO2

Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride