Multiple Exciton Generation in SiGe Nanoclusters: A Numerical Study

Mahdi Gordi,Mohammad K. Moravvej‐Farshi
DOI: https://doi.org/10.1002/pssr.201800407
2018-10-21
Abstract:The multiple exciton generation (MEG) in Si(0≤x≤7)Ge(7−x) nanoclusters using the equation‐of‐motion coupled‐cluster (EOM‐CCSD) method has been studied here. Simulation results indicate that the energy normalized to the optical bandgap, at which the absorptivity profile peaks, depends on the elemental structure of the nanocluster (NC). Moreover, the results show that the larger the number of Si atoms (x) in the NC, the larger the normalized MEG threshold to the optical energy gap (ETh), and the larger the optical absorption cross section. As an example, the maximum absorptivity in Si7Ge0 nanocluster is about 2.37 times that in Si0Ge7, and ETh for the former NC is larger than that of the latter. Hence, the superior optical absorptivity of Si7 shows, despite its larger normalized MEG threshold, it is the most desirable option for the MEG process in light‐harvesting devices, including solar cells. This is contrary to the concluding remark in our previous study that was made solely on the basis of comparing the normalized MEG thresholds. In multiple exciton generation (MEG), absorption of a photon in a given condition can lead to the production of more than one exciton. Simulations show that by increasing the percentage of silicon in the SiGe nanocluster, a blue shift is seen in the absorption spectrum and the normalized MEG threshold to the optical energy as well as optical absorption increases.
physics, condensed matter, applied,materials science, multidisciplinary
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