Direct biexciton generation in Si nanocrystal by a single photon

Sergey Fomichev,Vladimir Burdov
2023-12-06
Abstract:It has been shown theoretically that strong quantum confinement regime in Si nanocrystals promotes the highly efficient simultaneous excitation of two electron-hole pairs (biexciton) by a single photon. The rate (inverse lifetime) of biexciton generation has been calculated analytically as function of the nanocrystal radius. In contrast to the case of a nanocrystal formed of direct-band-gap semiconductor, the size-dependence of the rate in Si nanocrystal turns out to be sharp enough. At radii approaching a nanometer, the lifetime of biexciton generation falls into the nanosecond range.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in silicon nanocrystals, the mechanism and efficiency of directly generating biexcitons through single photons. Specifically, the author explored how silicon nanocrystals can efficiently excite two electron - hole pairs (i.e., biexcitons) simultaneously under the strong quantum confinement regime, and calculated the relationship between the biexciton generation rate and the nanocrystal radius. ### Problem Background 1. **Indirect Band - Gap Characteristics of Silicon Materials** - The indirect band - gap of silicon makes its optical transitions restricted by the law of conservation of momentum. Usually, an additional auxiliary mechanism (such as phonon - assisted) is required to achieve single - electron optical transitions. - In small - sized silicon nanocrystals, due to the quantum confinement effect, the requirement for strict momentum conservation is weakened, but it is still not enough to significantly increase the transition rate. 2. **Possibility of Biexciton Generation** - If a photon can simultaneously excite two electrons from near the top of the valence band to two relative positions near the bottom of the conduction band, then the total momentum can be maintained at zero, so no additional particles (such as phonons) are required to participate. - This process is called direct biexciton generation, which requires that the photon energy be at least slightly more than twice the band - gap energy. ### Research Objectives The author aims to theoretically study and calculate the rate of direct biexciton generation by a single photon in silicon nanocrystals, and analyze the variation law of this rate with the nanocrystal size. In particular, they hope to reveal whether the biexciton generation rate will increase significantly in extremely small - sized (close to 1 nanometer) silicon nanocrystals, and compare it with the single - exciton generation rate in direct - band - gap semiconductors. ### Key Formulas - The expression for the biexciton generation rate is: \[ \tau^{-1}=\frac{256 C^{2}S^{2}\sqrt{\epsilon_{0}}n(\omega_{g})\kappa(\omega_{g})\epsilon_{g}e^{6}a^{2}}{\pi^{4}m^{2}c^{3}\varepsilon^{2}R^{6}} \] where: - \(\omega_{g}=\frac{2\epsilon_{g}}{\hbar}\) is the transition frequency, - \(n(\omega_{g})\) is the number of photons with frequency \(\omega_{g}\) in the electromagnetic resonant cavity, - \(\kappa(\omega)=\left(\frac{3\epsilon_{0}}{2\epsilon_{0}+\epsilon(\omega)}\right)^{2}\) is the local field factor that describes the attenuation relationship of the electromagnetic field inside and outside the silicon nanocrystal, - \(\epsilon_{g}\) and \(\varepsilon\) are the band - gap energy and the parameter after effective mass correction respectively. Through these studies, the author hopes to provide new insights into the biexciton generation mechanism in silicon nanocrystals and lay the foundation for further exploration of phenomena such as multi - exciton generation and carrier multiplication.