Abstract:The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (Eg) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose–Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of Eg with temperature.

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17,000 %/W Second Harmonic Conversion Efficiency in Single Crystalline Aluminum Nitride Microresonators

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Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

Integrated high frequency aluminum nitride optomechanical resonators

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Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Broadband Tunable Microwave Photonic Phase Shifter with Low RF Power Variation in a High-Q AlN Microring

Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

High-Q aluminum nitride photonic crystal nanobeam cavities

A theoretical study of thermal management of FBAR considering thickness- and temperature-dependent thermal conductivity of AlN

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Simulation and Optimization of Piezoelectric Micromachined Ultrasonic Transducer Unit Based on AlN

Structure, defects, and microwave dielectric properties of Al-doped and Al/Nd co-doped Ba4Nd9.33Ti18O54 ceramics

Low-Threshold Chip-Scale Aluminum Nitride Raman Laser

Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices