High-power single-mode laser diodes with tapered amplifiers

r m lammert,m l osowski,v c elarde,s w oh,p t rudy,weisheng hu,t stakelon,laurent vaissie,j ungar

DOI: https://doi.org/10.1109/LEOS.2008.4688888

2008-01-01

Abstract:Both InP-based and GaAs-based high-power single-mode lasers are described. Single-mode powers of 9 W at 1064 nm and 1.2 W at 1550 nm have been achieved.

What problem does this paper attempt to address?

High-Brightness 850 Nm Tapered Laser Diodes

Ye Yang,Yun Liu,Li Qin,Jinlong Zhang,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1364/sumsession.2011.th16

2011-01-01

Abstract:High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the nearly diffraction-limited beam quality has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm−2·sr−1 when the output power is 200 mW. The electro-optical properties of tapered lasers are also discussed. The results reported in this paper may become a step forward to new applications of tapered diode lasers.
High-Power, Spectrally Stabilized, Near-Diffraction-Limited 970 Nm Laser Light Source Based on Truncated-Tapered Semiconductor Optical Amplifiers with Low Confinement Factors

X. Wang,G. Erbert,H. Wenzel,B. Eppich,P. Crump,A. Ginolas,J. Fricke,F. Bugge,M. Spreemann,G. Traenkle

DOI: https://doi.org/10.1088/0268-1242/27/1/015010

IF: 2.048

2011-01-01

Semiconductor Science and Technology

Abstract:High-power spectrally single-moded coherent emission with high beam quality is demonstrated using a master-oscillator (MO) power-amplifier (PA) system. The MO is a single-moded distributed Bragg reflector ridge-waveguide (DBR-RW) laser and the PA is a semiconductor amplifier with a truncated-tapered gain region. The spectrum of the DBR-RW is found to be preserved, with >40 dB of noise suppression. Peak output powers from the PA of >50 W (250 mu s, 100 Hz) are demonstrated for laser designs with conventional confinement factors in the active region, Gamma = 1%, but only with substantial degradation in the beam quality (M-2 at 1/e(2) level of > 30). The use of alternative designs with low confinement (Gamma = 0.4%) reduces the gain and hence peak power, but dramatically improves the beam quality (M-2 at 1/e(2) level of similar to 3), enabling similar to 11 W emission into a diffraction-limited central lobe, with temperature and current invariant central wavelength and a spectral width of similar to 40 pm.
996 Nm High-Power Single-Longitudinal-mode Tapered Gain-Coupled Distributed Feedback Laser Diodes.

Yuxin Lei,Yongyi Chen,Feng Gao,Dezheng Ma,Peng Jia,Hao Wu,Chunkao Ruan,Lei Liang,Chao Chen,Jun Zhang,Li Qin,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1364/ao.58.006426

IF: 1.9

2019-01-01

Applied Optics

Abstract:A high-power single-longitudinal-mode regrowth-free tapered gain-coupled distributed feedback laser diode based on periodic current injection is achieved at 996 nm. It enhances the output power without beam quality degrading. A continuous-wave output power of over 1.12 W is achieved at 3 A. The maximum output power in single-longitudinal-mode operation is up to 0.56 W at 1.4 A. The power conversion efficiency is over 24%, and the slope efficiency is 0.58 W/A. The side mode suppression ratio is over 38 dB; the 3 dB spectral linewidth is less than 2.4 pm. The lateral far-field divergence angle is only 14.98°, and the beam quality factor M2 is 1.64, achieving a near-diffraction-limit emission. Our device has great potential in commercial applications and the experimental study of high-power near-diffraction-limit laser diodes for its low-cost fabrication technique and narrowband single-longitudinal-mode emission at high power.
Characterization of a high-power tapered semiconductor amplifier system

D. Voigt,E.C. Schilder,R.J.C. Spreeuw,H.B. van Linden van den Heuvell

DOI: https://doi.org/10.48550/arXiv.physics/0004043

2000-04-19

Abstract:We have characterized a semiconductor amplifier laser system which provides up to 200mW output after a single-mode optical fiber at 780nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral background with a width of 4nm FWHM. The ASE background was suppressed to below our detection limit by a proper choice of operating current and temperature, and by sending the light through a single-mode optical fiber. The final ASE spectral density was less than 0.1nW/MHz, i.e. less than 0.2 % of the optical power. Related to an optical transition linewidth of $\Gamma/2\pi=6$ MHz for rubidium, this gives a background suppression of better than -82dB. An indication of the beam quality is provided by the fiber coupling efficiency up to 59 %. The application of the amplifier system as a laser source for atom optical experiments is discussed.

Atomic Physics,Optics
880 Nm Semiconductor Laser Diode Arrays and Fiber Coupling Module

Xiang-peng WANG,Xue-mei LIANG,Zai-jin LI,Bing-bing WANG,Li-jun WANG

DOI: https://doi.org/10.3788/ope.20101805.1021

2010-01-01

Optics and Precision Engineering

Abstract:An InGaAs/GaAs strained quantum well structure semiconductor laser diode with an emission wavelength of 880 nm was grown to achieve linear polarized laser outputs with high powers and better beam quality.Based on the PICS 3D software,Laser Diode Arrays(LDA) with a stripe width of 100 μm and filling factor of 50% was fabricated.The output power of 1 cm bars on conductively cooled package with continuous wave(CW) reaches to 60.8 W at a current of 70 A,the threshold current is 11.1 A and the peak wavelength is 878 nm with a Full Width Half Maximum(FWHM)of 2.4 nm.To improve the beam quality and increase the end pumping power of the DLA,a pair of micro step-mirrors were developed to shape the laser beams come from the high power DLA,and then a high power optical fiber couple module was developed.Results show that the couple module with a core diameter of 400 μm and a Number Aperture(NA) of 0.22 can offer the output power of 44.9 W and couple efficiency of 73.8%.
High Power Semiconductor Laser Array with Single-Mode Emission

Peng Jia,Zhi-Jun Zhang,Yong-Yi Chen,Zai-Jin Li,Li Qin,Lei Liang,Yu-Xin Lei,Cheng Qiu,Yue Song,Xiao-Nan Shan,Yong-Qiang Ning,Yi Qu,Li-Jun Wang

DOI: https://doi.org/10.1088/1674-1056/ac373d

2021-01-01

Chinese Physics B

Abstract:The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtained by the RWGs.And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A,after that,a kink will appear.The slow axis(SA)far-field divergence angle of the unit is 13.65°.The beam quality factor M2 of the units determined by the second-order moment(SOM)method,is 1.2.This single-mode emission laser array can be used for laser processing.
High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

FANG Gaozhan,XIAO Jianwei,Ma Xiaoyu,FENG Xiaoming,Wang Xiaowei,LIU Yuanyuan,Liu Bin,Tan Manqing,Lan Yongsheng

DOI: https://doi.org/10.3969/j.issn.1674-4926.2002.08.005

2002-01-01

Chinese Journal of Semiconductors

Abstract:The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al0.35-Ga0.65As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al0.55Ga0.45As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm-1.The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.
980Nm InGaAs/AlGaAs Quantum Well High Power Semiconductor Laser with Narrow Vertical Divergence Angle

Zhongliang Qiao,XiangLi,Chongyang Liu,ZecenZhang,Qianqian Meng,Te Li,Jing Zhang,Zhanguo Li,Lin Li,Xiaohui Ma,Yi Qu,Xin Gao,BaoxueBo,Hong Wang

DOI: https://doi.org/10.1109/icoom.2015.7398846

2015-01-01

Abstract:High-power and narrow vertical divergence angle 980nm InGaAs/AlGaAs quantum well semiconductor lasers have important applications in optical fiber communications, medical and military fields and so on. Traditional semiconductor laser is difficult for obtaining satisfactory power output and beam quality simultaneously. Large optical cavity 980nm high power semiconductor laser (PBCHPLDs) with one-dimensional photonic crystal structure can achieve these excellent output characteristics. Its good beam quality, high output power, and high efficiency coupling with fiber, making such devices have an important value for application. Epitaxial structure of one-dimensional photonic crystal structure large cavity 980nm InGaAs/AlGaAs quantum well semiconductor laser, parameters of whose were optimized using crosslight PICS3D, including ohm value and output characteristics. The epitaxial structure and process parameters for fabrication of other wavelength high brightness semiconductor lasers have important reference value.
Advances in High-Brightness Semiconductor Lasers

M. L. Osowski,W. Hu,R. M. Lammert,S. W. Oh,P. T. Rudy,T. Stakelon,J. E. Ungar

DOI: https://doi.org/10.1117/12.777065

2006-01-01

Abstract:We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
Investigation of the gain match in high brightness 980 nm tapered diode laser

Lin'an He,Weichuan Du,Yi Li,Yuwen He,Pengfei Xie,Kun Zhou,Liang Zhang,Yao Hu,Xin Yang,Shengzhe Liu,Pingkuan Gao,Songxin Gao,Chun Tang

DOI: https://doi.org/10.1016/j.jlumin.2022.119644

IF: 3.6

2022-12-28

Journal of Luminescence

Abstract:High brightness, high power tapered diode-laser regularly consists of an index-guided ridge-waveguide section and a gain-guide tapered section. The gain match between the ridge and tapered sections were studied in this paper. The gain peak wavelength of the ridge section is expected to be larger than that in the tapered section because of the higher optical power density by numerical simulation. It is found that the gain peak mismatch between the ridge and tapered sections results in broadened optical spectra and low output powers according to the experimental results. The mismatch is suppressed by lowering the junction temperature of the ridge section which shifts the gain peak of the ridge section to a shorter wavelength. Alternatively, the shift of the gain spectra was also realized by increasing the transparency carrier density with an additional optical loss in the ridge waveguide introduced by He + ion implantation. Tapered diode lasers with such designs have a beam quality factor M 2 (1/e 2 ) = 1.1 with an output power of 8 W and a narrow spectra width of 2 nm.

optics
High-Efficiency Diode Lasers at High Output Power

J Wang,B Smith,XM Xie,X Wang,GT Burnham

DOI: https://doi.org/10.1063/1.123604

IF: 4

1999-01-01

Applied Physics Letters

Abstract:808 nm lasers grown by molecular beam epitaxy show extremely high internal quantum efficiency and low internal loss, which results in very high slope efficiency at a long cavity length, and consequently, extremely high total power conversion efficiency at high continuous-wave power output.
High Power and High Efficiency On-Chip Integrated Laser

Yair Antman,Andres Gil-Molina,Ohad Westreich,Xingchen Ji,Alexander L. Gaeta,Michal Lipson

DOI: https://doi.org/10.1364/cleo_si.2022.sm2p.2

2022-01-01

Abstract:We demonstrate a highly efficient integrated laser, with more than 200 mW single mode output, overcoming the tradeoff between high power, efficiency and coherence in traditional lasers. The laser is based on the collapsing of a multimode gain into a single mode via self-injection locking.
High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

Yuxin Lei,Yongyi Chen,Feng Gao,Dezheng Ma,Peng Jia,Hao Wu,Chao Chen,Lei Liang,Jun Zhang,Jingyu Tian,Li Qin,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1016/j.optcom.2019.02.073

IF: 2.4

2019-01-01

Optics Communications

Abstract:In this paper, we demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser. It is designed based on periodic surface current injection to reach a high-power and single-longitudinal mode. A continuous-wave output power of over 1.2 W/facet is achieved at 4 A. High single-longitudinal-mode output power reaches up to 0.9 W/facet at 3 A at each uncoated facet. The side mode suppression ratio is nearly 30 dB at 980 nm. The 3 dB spectral width is less than 2.7 pm. The lateral far field divergence angle is only 14.5 degrees, the beam quality factor M-2 is 1.7, achieving a near-diffraction-limit emission. Our device, produced by standard i-line lithography, enhances the output power while obtaining the pleasurable spectral and spatial properties. It has great potential in widespread commercial applications such as high efficiency pumping sources for its low-cost, easy fabrication technique and excellent performance.
High performance high beam quality 808 nm tapered semiconductor lasers

Hui Li,Guojun Liu,Yi Qu,Yuxia Wang,Mei Li,Peng Lü,Zhongliang Qiao

DOI: https://doi.org/10.3788/CJL200936s2.0011

2009-01-01

Abstract:The free space laser communication has advantages of large data transmission amount, high direction of transmission and high transmission security. It has become one of the developing directions of next generation optical communication technologies. The tapered semiconductor lasers are the most important optical sources in the free space laser communication. In this paper, it has introduced the structure design, output characteristics and beam quality of 808 nm tapered semiconductor lasers. The total laser cavity length is 3.5 mm (tapered single emitters consist of a ridge section with a length of 800 μm and a tapered section with a length of 2.7 mm, the tapered angle is 6°). Si and SiO2 (95% reflectivity) are deposited at the rear facet with the help of electronic beam evaporator. The front facet is coated with a single layer of SiON (<1% reflectivity). The threshold current of the device is 0.75 A. The maximum slope efficiency is 0.615 W/A. The output power of the device reaches 2 W, horizontal divergence is 3.9°, vertical divergence is 40° and M2 factor is less than 1.8. It shows the device has good beam quality.
High Power Linear GRIN-SCH-SQW GaAs/AlGaAs Lasers

李忠辉,王玉霞,高欣,李梅,王玲,张兴德

DOI: https://doi.org/10.3321/j.issn:1000-7032.2002.01.021

2002-01-01

Abstract:The high power linear graded-index separate-confine-heterostructure signle-quantum-well GaAs/AlGaAs lasers have been grown and fabricated by MOVPE method.The maximum continue wave output optical power is up to 500mW for the lasers with 300μm wide stripe and 600μm cavity length.Threshold current is 137mA and emitting wavelength is 820.3nm at room temperature for continue wave operation.The measured vertical and parallel divergance angle are 4.5° and 38.2°,respectively.That is the advantages of graded-index separate-confine-heterostructure,thus it can get a higher efficiency in the application of pump solid lasers and fiber output.
Optimization of high power AlGaInP laser diodes at 626 nm

F. Mauerhoff,H. Wenzel,A. Maaßdorf,D. Martin,K. Paschke,G. Tränkle

DOI: https://doi.org/10.1007/s11082-023-06028-5

IF: 3

2024-01-27

Optical and Quantum Electronics

Abstract:Abstract The rapid advancement of $$^{9}\hbox {Be}^{+}$$ 9 Be + ion-based quantum computing is creating a high demand for scalable and specialized laser sources. For this purpose, laser radiation at 313 nm is necessary which is generated by frequency doubling of 626 nm laser emission. Laser sources in this spectral region lack simplicity and need to be miniaturized. We carry out a systematic improvement of room temperature semiconductor laser structures emitting at 626 nm. They are based on a GaInP single quantum well embedded in AlGaInP grown on GaAs. We first investigate the structure theoretically and determine its limits and optima. We select the three most promising quantum well combinations, which are grown by metal-organic vapor-phase epitaxy. Furthermore, we fabricate broad-area lasers with dimensions of 1600 $$\upmu$$ μ m $$\times$$ × 100 $$\upmu$$ μ m. All structures show laser operation around 626 nm. We are able to achieve a threshold current density of 721 A/cm 2 , a slope of 0.384 mW/mA and total maximum output power of 708 mW under pulsed excitation. Based on these results, we believe that quantum computing focusing on beryllium ions will highly benefit from these results.

engineering, electrical & electronic,optics,quantum science & technology
High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Yuxian Liu,Guowen Yang,Zhenfu Wang,Te Li,Song Tang,Yuliang Zhao,Yu Lan,Abdullah Demir

DOI: https://doi.org/10.1016/j.optlastec.2021.107145

2021-09-01

Abstract:Broad-area diode lasers with high output power and low lateral divergence angle are highly desired for extensive scientific and industrial applications. Here, we report on the epitaxial design for higher output power and a flared waveguide design for reduced divergence, which leads to high power operation with a low lateral divergence angle. A vertically asymmetric epitaxial structure was employed and optimized for low internal optical loss and high efficiency to realize high output power operation. Using a flared waveguide design, the lateral divergence angle was efficiently reduced by decreasing the number of high-order lateral optical modes significantly. The flared waveguide design introduces a smooth modification of the ridge width along the cavity without deteriorating laser performance. Based on the optimized epitaxial and waveguide design, we scaled the waveguide width to realize high continuous-wave power of 34.5 W at 25 °C. A low lateral divergence angle of 8° and high power conversion efficiency of 60% were achieved at the operating power level of 25 W. The life test data (30 A at 45 °C for 39 units, 0 failures in 1000 h) demonstrated reliable operation illustrating the efficient design for reduced lateral divergence angle and high operating power.

optics,physics, applied
Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

Markus Scherrer,Chang-Won Lee,Heinz Schmid,Kirsten E. Moselund

DOI: https://doi.org/10.1021/acsphotonics.3c01372

IF: 7

2024-02-12

ACS Photonics

Abstract:Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties, such as the desired single-mode emission. Here, we introduce a novel cavity design that allows amplification of the topological interface mode by deterministic placement of gain material within a topological lattice. The proposed design is experimentally implemented by a selective epitaxy process to achieve closely spaced Si and InGaAs nanorods embedded within the same layer. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes without introducing artificial losses.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

Yu-Xin Lei,Yong-Yi Chen,Feng Gao,De-Zheng Ma,Peng Jia,Qiu Cheng,Hao Wu,Chun-Kao Ruan,Lei Liang,Chao Chen,Jun Zhang,Jing-Yu Tian,Li Qin,Yong-Qiang Ning,Li-Jun Wang

DOI: https://doi.org/10.1109/jphot.2019.2893961

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. A continuous-wave power of over 0.681 W is achieved at 3 A. The maximum continuous-wave power at single-longitudinal-mode operation is up to 0.303 W at 1.4 A. Narrow linewidth emission has been reached with a 3 dB spectrum width less than 1.41 pm. The high side mode suppression ratio is over 35 dB. The lateral far field divergence angle is only 15.05°, the beam quality factor M2 is 1.245, achieving a laterally near-diffraction-limit emission. It is more beneficial for single-mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique.
Comparative theoretical and experimental studies of two designs of high-power diode lasers

K H Hasler,H Wenzel,P Crump,S Knigge,A Maasdorf,R Platz,R Staske,G Erbert

DOI: https://doi.org/10.1088/0268-1242/29/4/045010

IF: 2.048

2014-02-20

Semiconductor Science and Technology

Abstract:Design and technology developments targeted at increasing both power conversion efficiency and optical output power of GaAs-based diode lasers are under intense study worldwide, driven by the demands of commercial laser systems. The conversion efficiency at the operation point is known to be limited by electrical and optical losses in the p-side waveguide. In this paper an ‘extreme, double asymmetric’ design to mitigate the impact of the p-side waveguide is studied and compared with a more conventional design. An increase of the efficiency at the highest power is demonstrated, but it is less than expected from simulations.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter

High-power single-mode laser diodes with tapered amplifiers

High-Brightness 850 Nm Tapered Laser Diodes

High-Power, Spectrally Stabilized, Near-Diffraction-Limited 970 Nm Laser Light Source Based on Truncated-Tapered Semiconductor Optical Amplifiers with Low Confinement Factors

996 Nm High-Power Single-Longitudinal-mode Tapered Gain-Coupled Distributed Feedback Laser Diodes.

Characterization of a high-power tapered semiconductor amplifier system

880 Nm Semiconductor Laser Diode Arrays and Fiber Coupling Module

High Power Semiconductor Laser Array with Single-Mode Emission

High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

980Nm InGaAs/AlGaAs Quantum Well High Power Semiconductor Laser with Narrow Vertical Divergence Angle

Advances in High-Brightness Semiconductor Lasers

Investigation of the gain match in high brightness 980 nm tapered diode laser

High-Efficiency Diode Lasers at High Output Power

High Power and High Efficiency On-Chip Integrated Laser

High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

High performance high beam quality 808 nm tapered semiconductor lasers

High Power Linear GRIN-SCH-SQW GaAs/AlGaAs Lasers

Optimization of high power AlGaInP laser diodes at 626 nm

High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

Comparative theoretical and experimental studies of two designs of high-power diode lasers