High-Power, Spectrally Stabilized, Near-Diffraction-Limited 970 Nm Laser Light Source Based on Truncated-Tapered Semiconductor Optical Amplifiers with Low Confinement Factors

X. Wang,G. Erbert,H. Wenzel,B. Eppich,P. Crump,A. Ginolas,J. Fricke,F. Bugge,M. Spreemann,G. Traenkle
DOI: https://doi.org/10.1088/0268-1242/27/1/015010
IF: 2.048
2011-01-01
Semiconductor Science and Technology
Abstract:High-power spectrally single-moded coherent emission with high beam quality is demonstrated using a master-oscillator (MO) power-amplifier (PA) system. The MO is a single-moded distributed Bragg reflector ridge-waveguide (DBR-RW) laser and the PA is a semiconductor amplifier with a truncated-tapered gain region. The spectrum of the DBR-RW is found to be preserved, with >40 dB of noise suppression. Peak output powers from the PA of >50 W (250 mu s, 100 Hz) are demonstrated for laser designs with conventional confinement factors in the active region, Gamma = 1%, but only with substantial degradation in the beam quality (M-2 at 1/e(2) level of > 30). The use of alternative designs with low confinement (Gamma = 0.4%) reduces the gain and hence peak power, but dramatically improves the beam quality (M-2 at 1/e(2) level of similar to 3), enabling similar to 11 W emission into a diffraction-limited central lobe, with temperature and current invariant central wavelength and a spectral width of similar to 40 pm.
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