GeSn Near Infrared Photodetectors

Buwen Cheng,Dongliang Zhang,Shaojian Su,Xu Zhang,Chunlai Xue,Chuanbo Li,Guangze Zhang,Qiming Wang

DOI: https://doi.org/10.1364/acp.2013.af3b.3

2013-01-01

Abstract:GeSn p-i-n photodetectors grown on Si and Ge substrates by molecular beam epitaxy were fabricated. The photodetector on Ge has a low dark current density of 6.1mA/cm2 and extends the operating wavelength to about 2μm.

What problem does this paper attempt to address?

Si-based GeSn photodetectors towards mid-infrared imaging applications

Huong Tran,Thach Pham,Joe Margetis,Yiyin Zhou,Wei Dou,Perry C. Grant,Joshua M. Grant,Sattar Alkabi,Greg Sun,Richard A. Soref,John Tolle,Yong-Hang Zhang,Wei Du,Baohua Li,Mansour Mortazavi,Shui-Qing Yu

DOI: https://doi.org/10.48550/arXiv.1906.02848

2019-06-07

Applied Physics

Abstract:This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors.
Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Hao Zhou,Shengqiang Xu,Shaoteng Wu,Yi-Chiau Huang,Peng Zhao,Jinchao Tong,Bongkown Son,Xin Guo,Daohua Zhang,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.409944

IF: 3.8

2020-01-01

Optics Express

Abstract:A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×1010 cm·Hz1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.
Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Shuyu Wen,Mohd Saif Shaikh,Oliver Steuer,Slawomir Prucnal,Jörg Grenzer,René Hübner,Marcin Turek,Krzysztof Pyszniak,Sebastian Reiter,Inga Anita Fischer,Yordan M. Georgiev,Manfred Helm,Shaoteng Wu,Jun-Wei Luo,Shengqiang Zhou,Yonder Berencén

DOI: https://doi.org/10.1063/5.0166799

IF: 4

2023-08-21

Applied Physics Letters

Abstract:GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.

physics, applied
Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Yiding Lin,Danhao Ma,Kwang Hong Lee,Jin Zhou,Xin Guo,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2018.8478713

2018-01-01

Abstract:A germanium (Ge) MSM photodetector is demonstrated with significantly-enhanced photo-response at the L-band and beyond, using SiNx stressor at the waveguide sidewalls created by a self-aligned dry etching method. This provides a CMOS-compatible solution for Ge detectors for broadband high-speed integrated photonic applications.
High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Hao Zhou,Shengqiang Xu,Yiding Lin,Yi-Chiau Huang,Bongkwon Son,Qimiao Chen,Xin Guo,Kwang Hong Lee,Simon Chun-Kiat Goh,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.389378

IF: 3.8

2020-01-01

Optics Express

Abstract:We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm2 at −1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at −5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm.
Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Linlin Fan,Lei Wang,Haiyan He,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1364/ol.524572

2024-01-01

Abstract:Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2 µm, and it is sensitive to 375-1550 nm light at 0 V, which has optimality at 1342 nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154 A/W, and a response time of 0.93 ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

Huong Tran,Thach Pham,Joe Margetis,Yiyin Zhou,Wei Dou,Perry C. Grant,Joshua M. Grant,Sattar Alkabi,Wei Du,Greg Sun,Richard A. Soref,John Tolle,Baohua Li,Mansour Mortazavi,Shui-Qing Yu

DOI: https://doi.org/10.1364/cleo_si.2019.sth4o.6

2019-01-01

Abstract:The GeSn photodetectors with Sn compositions up to 22.3% were systematically investigated. The maximum cutoff wavelength of 3.7 μm at 300 K and the peak specific detectivity of 9.5×109 cm.Hz1/2W−1 at 77 K were achieved with 22.3% and 11.4% Sn devices, respectively. Moreover, the infrared images were captured using Ge0.89Sn0.11 photoconductor at 77 K. © 2019 The Author(s)
Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

Shengqiang Xu,Yi-Chiau Huang,Wei Wang,Yuan Dong,Saeid Masudy-Panah,Xin Guo,Hong Wang,Xiao Gong,Yee-Chia Yeo

DOI: https://doi.org/10.1109/group4.2018.8478758

2018-01-01

Abstract:We demonstrate a Ge0.9Sn0.1 photodiode on Si substrate with record-high responsivity R-op of 0.17 A/W at wavelength lambda of 2 mu m. Fourier-transform infrared spectroscopy (FTIR) reveals that the detector has a cutoff wavelength lambda(c) at similar to 2.6 mu m.
High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Hao Zhou,Shengqiang Xu,Yiding Lin,Yi-Chiau Huang,Bongkwon Son,Wei Li,Xin Guo,Lin Liu,Kwang Hong Lee,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/cleo_si.2020.sth4l.1

2020-01-01

Abstract:Photon-trapping microstructure was designed and incorporated into GeSn/Ge multiple-quantum-well photodetectors to enhance the optical absorption. A four times higher responsivity of 0.11 A/W was achieved at a wavelength of 2 μm.
Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Hao Zhou,Qimiao Chen,Shaoteng Wu,Lin Zhang,Xin Guo,Bongkwon Son,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.449326

IF: 3.8

2022-01-01

Optics Express

Abstract:Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 µA was achieved at -1 V. The grating structure enhances the optical absorption by guiding the lateral propagation of normal incident light, contributing to a 3× improved responsivity at 1,550 nm. Compared with the grating structure, the hole-array structure not only guides the lateral modes but also benefits the vertical resonance modes. A 4.5× higher responsivity of 0.188 A/W at 1,550 nm was achieved on the 260 nm Ge absorptive layer. In addition, both the grating and the hole-array structure attribute to a 2× and a 1.6× enhanced 3dB bandwidth at -5 V due to significantly reduced capacitance. The planar configuration of p-i-n photodiodes is favorable for large-scale monolithic integration. The incorporated surface structures offer promising approaches to reinforce the responsivity and bandwidth simultaneously, paving the way for the development of high-performance Ge photodetectors on silicon substrate.
Planar GeSn photodiode for high-detectivity photodetection at 1550 nm

Kuo-Chih Lee,Min-Xiang Lin,Hui Li,Hung-Hsiang Cheng,Greg Sun,Richard Soref,Joshua R. Hendrickson,Kuan-Ming Hung,Patrik Scajev,Arthur Medvids

DOI: https://doi.org/10.1063/5.0006711

IF: 4

2020-07-06

Applied Physics Letters

Abstract:We report an investigation of a planar GeSn p–i–n diode for a high-detectivity photodetector based on an undoped GeSn film. By fabricating n- and p-type regions on the plane of the GeSn film using the complementary metal–oxide–semiconductor technology of ion implantation, a low dark current density is revealed and attributed to the low defect density of the film and current flow suppression around the diode periphery. This yields a specific 1550-nm detectivity of ∼1010 cm Hz1/2 W−1, an order of magnitude higher than that of conventional vertical GeSn-based diodes and comparable to that of commercially available Ge-based diodes. This work provides an alternative approach for achieving a high-detectivity GeSn photodetector that may facilitate its potential applications.

physics, applied
High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Yiding Lin,Kwang Hong Lee,Shuyu Bao,Xin Guo,Hong Wang,Jurgen Michel,Chuan Seng Tan

DOI: https://doi.org/10.1364/prj.5.000702

IF: 7.6

2017-01-01

Photonics Research

Abstract:In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of similar to 47 mA/cm(2) at -1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of similar to 97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 alpha m exhibit a 3 dB bandwidth of similar to 1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to similar to 32 GHz with mesa diameter of 10 ae m. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics. (C) 2017 Chinese Laser Press
Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Yuekun Yang,Xudong Wang,Chen Wang,Yuxin Song,Miao Zhang,Zhongying Xue,Shumin Wang,Zhongyunshen Zhu,Guanyu Liu,Panlin Li,Linxi Dong,Yongfeng Mei,Paul K. Chu,Weida Hu,Jianlu Wang,Zengfeng Di

DOI: https://doi.org/10.1021/acs.nanolett.0c01039

IF: 10.8

2020-01-01

Nano Letters

Abstract:GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge heterostructure usually consists of defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of a photodetector fabricated on bulk GeSn/Ge heterostructures induce a considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects, and the feature dimension is naturally at the nanoscale. A photodetector with a low dark current can be built on a GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and enhanced responsivity compared to the Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from the ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.
Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Soumava Ghosh,Kuan-Chih Lin,Cheng-Hsun Tsai,Harshvardhan Kumar,Qimiao Chen,Lin Zhang,Bongkwon Son,Chuan Seng Tan,Munho Kim,Bratati Mukhopadhyay,Guo-En Chang

DOI: https://doi.org/10.3390/mi11090795

IF: 3.4

2020-08-21

Micromachines

Abstract:Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
P-i-n photodetector with active GePb layer grown by sputtering epitaxy

Jiulong Yu,Guangyang Lin,Shilong Xia,Wei Huang,Tianwei Yang,Jinlong Jiao,Xiangquan Liu,Songyan Chen,Cheng Li,Jun Zheng,Jun Li

DOI: https://doi.org/10.35848/1882-0786/ad3dc1

IF: 2.819

2024-04-12

Applied Physics Express

Abstract:In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surfaces. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb-based p-i-n photodetector was successfully prepared. The device showed a room-temperature dark current density of 5.83 mA/cm2 at -1.0 V and a cutoff wavelength of 1990 nm, which covers all communication windows. At the wavelength of 1625 nm, responsivity of the photodetector reached 0.132 A/W at -1.0 V. The device demonstrates potential application in optical communications.

physics, applied
Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application

Jinlai Cui,Rui Fang,Xiangquan Liu,Yiyang Wu,Qinxing Huang,Zhipeng Liu,Fei Yi,Zhi Liu,Yuhua Zuo,Buwen Cheng,Jun Zheng

DOI: https://doi.org/10.1021/acsphotonics.4c00996

IF: 7

2024-01-01

ACS Photonics

Abstract:The metasurface structure can effectively manipulate the direction of light propagation, making it highly promising for the development of high-performance photonic devices. GeSn alloy, which is compatible with CMOS processes, is a highly attractive infrared semiconductor. In this study, GeSn metasurface photodetectors (PDs) were fabricated and comprehensively investigated. Optical field distribution simulations at a 2 mu m wavelength revealed that the optimized metasurface structure significantly enhances the quantum efficiency (QE) of GeSn PDs by converting light propagation from the longitudinal to the transverse direction. The dark current of the fabricated GeSn metasurface PDs remained nearly unchanged, while the responsivity increased significantly. At a wavelength of 2000 nm, the room-temperature responsivity was improved from 0.10 to 0.34 A/W, and both temperature-dependent and incident light power-dependent responsivities were studied. The cutoff wavelength of the PD was extended from 2750 to 2950 nm due to the enhanced interaction between the light and the GeSn layer. In the tested photocurrent spectrum between 1600 and 2400 nm, the maximum response enhancement factor reached approximately 2 to 4. The significantly enhanced optoelectronic performance indicates that the proposed metasurface structure has great potential for fabricating GeSn PDs operating in the short-wave infrared (SWIR) region.
Visible to Near-Infrared Light Detectors Based on Au/SnS/Ag Schottky Structure with Ultrahigh Responsivity and Fast Response

Biao He,Yongkai Jing,Xinfa Zhu,Chao Fan,Chun Sun,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li

DOI: https://doi.org/10.1109/ted.2023.3282189

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, light detectors utilizing p-type tin monosulfide (p-SnS) few layers with an Au/SnS/Ag Schottky structure are demonstrated. These detectors exhibit broad-spectrum light detection capabilities spanning the visible to near-infrared (NIR) wavelength range. Notably, under NIR 850 nm illumination, the detectors exhibit exceptional photodetection performance with an ultrahigh responsivity of up to 1652.87 A .W-1, an extremely specific detectivity of 8.05 x 10(12) cm.Hz.W-1, and a rapid response time of approximately 6.5 ms. These characteristics surpass those of most 2-D materials-based detectors and even outperform commercial InGaAs (Hamamatsu, InGaAs G8370-85) and Silicon (Hamamatsu, Si S9119-01) detectors. The remarkable photoresponse is attributed to the SnS/Ag Schottky structure, which facilitates the separation of excited electron-hole pairs. Our findings suggest a promising route for developing high-performance optoelectronics based on p-SnS.
Ge0.975Sn0.025 320 × 256 imager chip for 1.6-1.9 μm infrared vision

Chiao Chang,Hui Li,Chien-Te Ku,Shih-Guo Yang,Hung Hsiang Cheng,Joshua Hendrickson,Richard A Soref,Greg Sun

DOI: https://doi.org/10.1364/AO.55.010170

2016-12-20

Abstract:We report the experimental fabrication and testing of a GeSn-based 320×256 image sensor focal plane array operating at -15°C in the 1.6-1.9 μm spectral range. For image readout, the 2D pixel array of Ge/GeSn/Ge p-i-n heterophotodiodes was flip-chip bonded to a customized silicon CMOS readout integrated circuit. The resulting camera chip was operated using back-side illumination. Successful imaging of a tungsten-filament light bulb was attained with observation of gray-scale "hot spot" infrared features not seen using a visible-light camera. The Ge wafer used in the present imaging array will be replaced in future tests by a germanium-on-silicon wafer offering thin-film Ge upon Si or on SiO2/Si. This is expected to increase the infrared responsivity obtained in back-side illumination, and it will allow an imager in a Si-based foundry to be manufactured. Our experiments are a significant step toward the realization of group IV near-mid-infrared imaging systems, such as those for night vision.
Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

Sudarshan Singh,Subhrajit Mukherjee,Samik Mukherjee,Simone Assali,Lu Luo,Samaresh Das,Oussama Moutanabbir,Samit K Ray

DOI: https://doi.org/10.1063/5.0087379

2022-02-05

Abstract:Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour deposition-grown high Sn-content Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell based single nanowire photodetector operating at the optical communication wavelength of 1.55 $\mu$m. The atomic concentration of Sn in nanowires has been studied using X-ray photoelectron and Raman spectroscopy data. A metal-semiconductor-metal based single nanowire photodetector, fabricated via electron beam lithography process, exhibits significant room-temperature photoresponse even at zero bias. In addition to the high-crystalline quality and identical shell composition of the nanowire, the efficient collection of photogenerated carriers under an external electric field result in the superior responsivity and photoconductive gain as high as ~70.8 A/W and ~57, respectively at an applied bias of -1.0 V. The extra-ordinary performance of the fabricated photodetector demonstrates the potential of GeSn nanowires for future Si CMOS compatible on-chip optical communication device applications.

Materials Science,Applied Physics
Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

Zhijian Shen,Zhuo Deng,Xuyi Zhao,Jian Huang,Chunfang Cao,Xinbo Zou,Fengyu Liu,Qian Gong,Baile Chen

DOI: https://doi.org/10.1063/5.0038844

IF: 4

2021-02-22

Applied Physics Letters

Abstract:A germanium (Ge) or germanium-on-silicon (Ge-on-Si) substrate is an attractive yet not well-studied platform for developing long-wave infrared photonics devices such as lasers and photodetectors. In this paper, we report a long-wave infrared quantum cascade photodetector grown on the Ge substrate with a submonolayer InAs/GaAs quantum dot as the infrared absorber. At 77 K under zero bias, the detector shows a differential-resistance area (<math> R 0 A</math>) product of 298.7 Ω·cm2. The normal-incident peak responsivity is 0.56 mA/W observed at 8.3 μm, corresponding to a Johnson noise limited detectivity of 1.5 × 108 cm·Hz1/2/W. In addition, the effect of the periodic stage number of active regions on device's performance is discussed in detail. The device characteristics presented in this work demonstrate the potential for monolithic integration of this quantum cascade detector with the Ge or Ge-on-Si substrate for large-scale, cost-effective sensing and imaging applications.

physics, applied

GeSn Near Infrared Photodetectors

Si-based GeSn photodetectors towards mid-infrared imaging applications

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Planar GeSn photodiode for high-detectivity photodetection at 1550 nm

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

P-i-n photodetector with active GePb layer grown by sputtering epitaxy

Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application

Visible to Near-Infrared Light Detectors Based on Au/SnS/Ag Schottky Structure with Ultrahigh Responsivity and Fast Response

Ge0.975Sn0.025 320 × 256 imager chip for 1.6-1.9 μm infrared vision

Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate