High temperature creep behavior of in situ synthesized MoSi2-30%SiC composite

Xiaowei Fu,Wangyue Yang,LaiQi Zhang,Zuqing Sun,Jing Zhu
DOI: https://doi.org/10.3321/j.issn:0412-1961.2002.07.013
2002-01-01
Abstract:The compressive creep behaviors of an in situ synthesized MoSi2-30%SiC composite and a traditional PM MoSi2-30%SiC composite were investigated at 1200-1400°C. The creep rates of the in situ synthesized MoSi2-30%SiC composite were about 10-7 s-1 under stress of 60-120 MPa, and significantly lower than that made by PM method above 1300°C. The reason was that the interface between in situ synthesized MoSi2/SiC is of direct atomic bonding without any glassy phase, such as SiO2. Creep deformation occurred primarily by dislocation motion and the dislocations have Burgers vectors of the type of 〈110〉 and 〈100〉.
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