Abstract:Silicon Carbide (SiC) power devices have become commercialized and are being adopted for many applications after 40 years of effort to produce large diameter wafers and high performance device structures. This paper provides a historical perspective of the key breakthroughs that were needed to make progress towards this goal. The JBS rectifier concept was a critical innovation required to make SiC power Schottky rectifiers viable. The Baliga-Pair or Cascode concept was an intermediate step to realize a practical SiC power switch in the 1990s. An essential unique innovation created in the 1990s was the shielded planar SiC power MOSFET structure that is now commonly used for commercial products. Shielded trench-gate SiC power MOSFETs were also proposed in the 1990s which led to commercial products in the last 5 years. Although achieving a low specific on-resistance in SiC power MOSFETs was essential at the inception of the technology, its penetration into power electronics applications is now driven by performance metrics for high frequency circuits. Device structural enhancements to improve the high frequency figures-of-merit are described that have led to major strides in performance. This includes the JBSFET concept where a JBS diode is integrated into the MOSFET structure to suppress current flow through the body diode; the SG and BG MOSFET structures which reduce the gate-drain charge; and the OCTFET structure where the gate-drain overlap area is reduced. Future developments in SiC power devices include increasing the blocking voltage rating to expand the applications spectrum. In addition, a SiC monolithic bi-directional switch has been demonstrated to allow implementation of matrix converters; and a SiC monolithic reverse blocking switch has been demonstrated to allow deployment of current source inverters.

Sic Power Devices for Next Generation Energy Efficiency

Advances in SiC materials and devices: an industrial point of view

SiC based Technology for High Power Electronics and Packaging Applications

Soft-switching SiC Power Electronic Conversion for Distributed Energy Resources and Storage Applications

Recent advances in silicon carbide MOSFET power devices

Silicon Carbide Power Devices: Progress and Future Outlook

Recent progress of SiC power devices and applications

Recent Progress in SiC and GaN Power Devices

SiC Power Devices for Microgrids

Long-term reliability of a hard-switched boost power processing unit utilizing SiC power MOSFETs

An SiC MOSFET & Si Diode Hybrid Three-Phase High-Power Three-level Rectifier

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Commercialization of Highly Rugged 4H-Sic 3300 V Schottky Diodes and Power MOSFETs

Power-Switching Applications Beyond Silicon: Status and Future Prospects of Sic and Gan Devices

SIC power devices in power electronics: An overview

Advances in SiC power MOSFET technology

Membrane High Voltage Devices - A Milestone Concept In Power Ics

Development and Prospect of SiC Power Devices in Power Grid

High efficiency power factor correction power supply based on SiC device

Roadmap for SiC power devices

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations