Abstract:Aluminum nitride (AlN) is a promising ultrawide bandgap material with significant advantages for power electronics and optoelectronic applications due to its high breakdown voltage, mobility, and thermal conductivity. AlN Schottky barrier diodes (SBDs) and metal semiconductor field effect transistors (MESFETs) have shown potential but are limited by issues such as high off-state leakage current and complex structures to achieve ohmic contacts. To address these challenges, we report on the fabrication and characterization of an AlN metal oxide semiconductor field effect transistor (MOSFET) with a recessed gate structure. The source and drain contacts were fabricated on n-doped AlN epitaxy using Ti-based contacts with a Ti/Al/Ti/Au metal stack. To evaluate the performance of these contacts, a circular transmission line model (CTLM) was employed, and contacts were annealed at various temperatures ranging from 750 to 950 °C in a nitrogen ambient. Our results reveal that unannealed Ti-based contacts on AlN showed no current conduction. However, annealing these contacts at 950 °C for 30 s significantly reduced the specific contact resistance to 0.148 Ω·cm 2 , achieving an ~80% reduction compared to samples annealed at 750 °C. Utilizing these optimized contact conditions, we fabricated, to the best of our knowledge, the first AlN MOSFET. The fabricated AlN MOSFET exhibits a threshold voltage of −10.91 V, an effective mobility of 2.95 cm 2 /Vs, an on-off current ratio spanning two orders of magnitude, and a reverse breakdown voltage of approximately ~250 V in air without a field plate.

Demonstration of Undoped Quaternary AlInGaN∕GaN Heterostructure Field-Effect Transistor on Sapphire Substrate

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

High Electron Mobility in Nearly Lattice-Matched AlInN∕AlN∕GaN Heterostructure Field Effect Transistors

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Demonstration of AlGaN/GaN HEMTs on Vicinal Sapphire Substrates with Large Misoriented Angles

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

First Demonstration of an N-Polar InAlGaN/GaN HEMT

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Iii-Nitride Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using Sputtered Alon Thin Films

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

AlGaN/GaN Heterostructure Field Effect Transistor Materials Grown by Molecular Beam Epitaxy

Al X in 1-X N/GaN Heterostructure Field Effect Transistors

Electron Mobility in InGaN Channel Heterostructure Field Effect Transistor Structures with Different Barriers

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Enhancement-mode AlGaN/GaN HEMTs on Silicon Substrate

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts