Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Anisotropic Structural Characteristics Of (11(2)Over-Bar0) Gan Templates And Coalesced Epitaxial Lateral Overgrown Films Deposited On (10(1)Over-Bar2) Sapphire

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

Anisotropic Characteristics of A-Plane GaN Films Grown on Γ-Lialo2 (302) Substrates by MOCVD

In situ asymmetric island sidewall growth of high-quality semipolar (11(2)over-bar2) GaN on m-plane sapphire

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Optical Properties Evolution of GaN Film Grown Via Lateral Epitaxial Overgrowth

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

((3)over-bar10)-Oriented -Ga<sub>2</sub>O<sub>3</sub> grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

A Comparative Study on the Properties of C-Plane and A-Plane GaN Epitaxial Films Grown on Sapphire Substrates by Pulsed Laser Deposition

Microstructures Of Gan Films Laterally Overgrown On Si(111) By Hydride Vapour Phase Epitaxy

Gan Grown on Ain/Sapphire Templates

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Anisotropic Defect Structure of GaN Film Grown by MOCVD