Abstract:Conjugated-polymer field-effect transistors are attractive for flexible electronics. However, relatively high chemical doping (oxidation) concentration of p-type polymer semiconductors is usually not compatible with good transistor performance, due to poor switching-off capability and short-channel performance. Here, we propose a combined simulation and experimental investigation on charge transport in a semiconductor-insulator alternating bulk junction composed of repeating semiconductor and insulator regions, which shows better transistor performance at higher doping levels, as compared with traditional planar transistors. Moreover, the doped semiconductor transport layers in the junction should be less than 2 nm thick to ensure sufficient pinch off capability. Using some semiconductors including poly(3-hexylthiophene), we utilize a fast solvent evaporation approach to obtain semiconductor-insulator alternating bulk junctions with ultrathin (thickness < 2 nm) semiconductor crystallites and with vertical gradients of both morphology and electronic properties. Doping with a concentration of up to 10(19) cm(-3) simultaneously induces the improvement of field-effect mobility, on/off ratio, and subthreshold swing, which leads to long-term (>1 year) stability, without lowering the short-channel performance. Moreover, these heterojunctions are optically transparent, nearly colorless, and flexible, thus could be exploited for wide electronic and photonic applications.

Remote Doping of a Pentacene Transistor: Control of Charge Transfer by Molecular-Level Engineering

Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

"Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors

Correlated electron-hole mechanism for molecular doping in organic semiconductors

Solution doping of organic semiconductors using air-stable n-dopants

Electrochemical Lithium Doping of A Pentacene Molecule Semiconductor

Electric‐Field‐Controlled Dopant Distribution in Organic Semiconductors

Switching charge-transfer characteristics from p-type to n-type through molecular "doping" (co-crystallization)

n-type charge transport in heavily p-doped polymers

Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

Performance Enhancement of Planar Heterojunction Perovskite Solar Cells Through Tuning the Doping Properties of Hole-Transporting Materials.

Doping-induced electronic transport properties in tetracene-based molecular device

Electrical Doping of Metal Halide Perovskites by Co‐evaporation and Application in PN Junctions

Pentacene Doping for the Efficiency Improvement of Polymer Solar Cells

Tuning effective hyperfine fields in PEDOT:PSS thin films by doping

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

Remote modulation doping in van der Waals heterostructure transistors

High Mobility Organic Transistors Fabricated from Single Pentacene Microcrystals Grown on a Polymer Film

Conjugated Polymer Controlled Morphology and Charge Transport of Small-Molecule Organic Semiconductors

Site-specific chemical doping reveals electron atmospheres at the surfaces of organic semiconductor crystals