Abstract:Limited internal phonon coupling and transfer within graphene in the out-of-plane direction significantly affects graphene-substrate interfacial phonon coupling and scattering, and leads to unique interfacial thermal transport phenomena. Through the simultaneous characterization of graphene and SiC Raman peaks, it is possible, for the first time, to distinguish the temperature of a graphene layer and its adjacent 4H-SiC substrate. The thermal probing resolution reaches the nanometer scale with the graphene (≈1.12 nm) and is on the micrometer scale (≈12 μm) within SiC next to the interface. A very high thermal resistance at the interface of 5.30 (-0.46) (+0.46) x 10(-5) Km2 W(-1) is observed by using a Raman frequency method under surface Joule heating. This value is much higher than those from molecular dynamics predictions of 7.01(-1.05) (+1.05) x 10(-1) and 8.47(-0.75) (+0.75) x 10(-10) Km2 w(-1) for surface heat fluxes of 3 × 10(9) and 1 × 10(9) and 1 x 10(10) W m(-2) , respectively. This analysis shows that the measured anomalous thermal contact resistance stems from the thermal expansion mismatch between graphene and SiC under Joule heating. This mismatch leads to interface delamination/separation and significantly enhances local phonon scattering. An independent laser-heating experiment conducted under the same conditions yielded a higher interfacial thermal resistance of 1.01(-0.59) (+1.23) x 10(-4) Km2 W(-1). Furthermore, the peak width method of Raman thermometry is also employed to evaluate the interfacial thermal resistance. The results are 3.52 × 10(-5) and 8.57 × 10(-5) K m2 W(-1) for Joule-heating and laser-heating experiments, respectively, confirming the anomalous thermal resistance between graphene and SiC. The difference in the results from the frequency and peak-width methods is caused by the thermal stress generated in the heating processes.

Variable Temperature Raman Microscopy As A Nanometrology Tool For Graphene Layers And Graphene-Based Devices

Raman Nanometrology Of Graphene On Arbitrary Substrates And At Variable Temperature

Raman Nanometrology of Graphene: Temperature and Substrate Effects

Temperature Coefficients of the Raman Peaks for the Single-Layer and Bi-Layer Graphene

Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers

Spectroscopic Raman Nanometrology of Graphene and Graphene Multilayers on Arbitrary Substrates

The split-up of G band and 2D band in temperature-dependent Raman spectra of suspended graphene

Temperature-activated layer-breathing vibrations in few-layer graphene

Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC

Probing Carbon Nanoparticles in Cnx Thin Films Using Raman Spectroscopy

Graphene Quantum Dots as Intracellular Imaging-Based Temperature Sensors

Temperature Dependence of the Raman Spectra of Single-Wall Carbon Nanotubes

Visual Measurement of the Microscopic Temperature of Porous Graphene Based on Cholesteric Liquid Crystal Microcapsules

Raman Optothermal Technique for Measuring Thermal Conductivity of Graphene and Related Materials

Low-temperature Raman studies of graphene oxide: Analysis of structural properties

Ultraviolet Raman Spectroscopy of Single and Multi-layer Graphene

Low-temperature Raman G-mode of plasmonic-graphene hybrid platform

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Temperature Dependence Of The Raman Spectra Of Carbon Nanotubes

Measurement of specific heat and thermal conductivity of supported and suspended graphene by a comprehensive Raman optothermal method.

Measurement of the Electronic Thermal Conductance Channels and Heat Capacity of Graphene at Low Temperature