Abstract:By thermally cycling single layer graphene in air, we observe irreversible upshifts of the Raman G and 2D bands of 24 and 23 cm(-1), respectively. These upshifts are attributed to an in-plane compression of the graphene induced by the mismatch of thermal expansion coefficients between the graphene and the underlying Si/SiO2 substrate, as well as doping effects from the trapped surface charge in the underlying substrate. Since the G and the 2D band frequencies have different responses to doping, we can separate the effects of compression and doping associated with thermal cycling. By performing thermal cycling in an argon gas environment and by comparing suspended and on-substrate regions of the graphene, we can separate the effects of gas doping and those of doping from the underlying substrate. Variations in the ratio of the 2D-to-G band Raman intensities provide an independent measure of the doping in graphene that occurs during thermal cycling. During subsequent thermal cycles, both the G and the 2D bands downshift linearly with increasing temperature and then upshift reversibly to their original frequencies after cooling. This indicates that no further compression or doping is induced after the first thermal cycle. The observation of ripple formation in suspended graphene after thermal cycling confirms the induction of in-plane compression. The amplitude and wavelength of these ripples remain unchanged after subsequent thermal cycling, corroborating that no further compression is induced after the first thermal cycle.

The split-up of G band and 2D band in temperature-dependent Raman spectra of suspended graphene

The origin of sub-bands in the Raman D-band of graphene

Raman Nanometrology of Graphene: Temperature and Substrate Effects

Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers

Strain-dependent Raman Analysis of the G* Band in Graphene

Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap

Direct Observation of Inner and Outer G' Band Double-resonance Raman Scattering in Free Standing Graphene

Raman Spectra And Corresponding Strain Effects In Graphyne And Graphdiyne

Raman Spectroscopy of Substrate-Induced Compression and Substrate Doping in Thermally Cycled Graphene

Abnormal Raman Characteristics of Graphene Originating from Contact Interface Inhomogeneity

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Variable Temperature Raman Microscopy As A Nanometrology Tool For Graphene Layers And Graphene-Based Devices

Domain-boundary Independency of Raman Spectra for Strained Graphene at Strong Interfaces

Monitoring electrostatically-induced deflection, strain and doping in suspended graphene using Raman spectroscopy

Splitting of the Raman $2D$ band of graphene subjected to strain

Molecular dynamics simulations of thermal conductivity and spectral phonon relaxation time in suspended and supported graphene

Raman Spectroscopy of Ripple Formation in Suspended Graphene

Temperature Dependence of Thermal Conductivity of Giant-Scale Supported Monolayer Graphene

Disentangling Light‐Induced Charge Transfer, Heating, and Strain Effects in WS2/Graphene Heterostructures

Raman Nanometrology Of Graphene On Arbitrary Substrates And At Variable Temperature

Evolution of Raman G and G'(2D) Modes in Folded Graphene Layers