Raman Nanometrology Of Graphene On Arbitrary Substrates And At Variable Temperature

Irene Calizo,Suchismita Ghosh,Desalegne Teweldebrhan,Wenzhong Bao,Feng Miao,Chun Ning Lau,Alexander A. Balandin

DOI: https://doi.org/10.1117/12.795421

2008-01-01

Abstract:The unique properties of graphene have recently attracted major attention leading to proposals in electronic, optoelectronic, and detector applications. Micro-Raman spectroscopy has been utilized as a convenient tool for identifying graphene layers. Most Raman studies were limited to layers on silicon substrates with an oxide layer thickness of 300 nm, rendering graphene visible under an optical microscope. The development of graphene technology requires its integration with different materials and strict control of the number of layers and defects. Thus it is important to extend the nanometrology capabilities of Raman spectroscopy to arbitrary substrates and temperatures. Here we report that the deconvolution of the 2D band allows one to count graphene layers even when placed on "inconvenient" substrates such as glass or sapphire. We also show that even small excitation laser power typically used for Raman spectroscopy may lead to strong heating in graphene. The determined temperature coefficients for graphene allowed us to evaluate the temperature rise and decouple the temperature effects from those due to variations in the graphene edges or substrates.