Strain-dependent Raman Analysis of the G* Band in Graphene

Yunlu Wang,Xiaocheng Zhou,Yanhan Jin,Xuewei Zhang,Zilong Zhang,Yang Wang,Jinglan Liu,Miao Wang,Yang Xia,Pei Zhao,Zhuhua Zhang,Hongtao Wang

DOI: https://doi.org/10.1103/physrevb.100.241407

2019-01-01

Abstract:Compared with the well-established theory for other graphene Raman bands, the origin of the G* band at similar to 2450 cm(-1) remains unclear. A major debate lies at whether it should be assigned solely to the combined q not equal 0 in-plane (i) transverse-optical (TO) and longitudinal-acoustic (LA) phonon modes, or to such a combination with additional q = 0 iTO phonon overtones. A strain-dependent Raman analysis shows that during uniaxial strain this band exhibits only frequency redshift but no line shape changes. It is well interpreted by first-principles calculations, and thereby unambiguously identifies the origin of the G* band as the q not equal 0 iTO and LA phonon combination.