Efficient Charge Injection from A High Work Function Metal in High Mobility N-Type Polymer Field-Effect Transistors

M. Caironi,C. Newman,J. R. Moore,D. Natali,H. Yan,A. Facchetti,H. Sirringhaus
DOI: https://doi.org/10.1063/1.3424792
IF: 4
2010-01-01
Applied Physics Letters
Abstract:We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2/V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.
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