Interface-state Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory.
Hanlu Ma,Wei Wang,Haiyang Xu,Zhongqiang Wang,Ye Tao,Peng Chen,Weizhen Liu,Xintong Zhang,Jiangang Ma,Yichun Liu
DOI: https://doi.org/10.1021/acsami.8b07850
IF: 9.5
2018-01-01
ACS Applied Materials & Interfaces
Abstract:Hybrid organic-inorganic perovskite, well known as light-absorbing materials in solar cells, have recently attracted considerable interest for applications in resistive switching (RS) memory. A better understanding of the role of interface-state in hybrid perovskite materials on RS behavior is essential for the development of practical devices. Here, we study the influence of interface-state on the RS behavior of an Au/CHNHPbI/FTO memory device using a simple air-exposure method. We observe a transition of RS hysteresis behavior with exposure time. Initially no hysteresis is apparent but air exposure induces bipolar RS and a negative differential resistance (NDR) phenomenon. Notably, this is the first demonstration of a NDR effect in hybrid perovskite based memory. The reductions of I/Pb atomic ratio and work function on film surface are examined using XPS spectra and Kelvin Probe technique, verifying the produce of donor-type interface-states (e.g. iodine vacancies) during CHNHPbI film degradation. Studies on complex impedance spectroscopy confirm the responsibility of interface-states in NDR behavior. Eventually, the trapping/de-trapping of electrons in bulk defects and at interface-states accounts for the bipolar RS behavior accompanied with NDR effect.