Abstract:The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers.

Direct Experimental Evidence for the Reversal of Carrier Type Upon Hydrogen Intercalation in Epitaxial Graphene/sic(0001)

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Intercalation of hydrogen in the SiC/epitaxial graphene interface

Er intercalation and its impact on transport properties of epitaxial graphene

The Investigation of Cobalt Intercalation Underneath Epitaxial Graphene on 6H-Sic(0 0 0 1)

Calcium Intercalation Underneath N-layer Graphene on 6H-Sic(0001)

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Surface and interface structure of quasi-free standing graphene on SiC

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Interface Engineering of Epitaxial Graphene on SiC(0001¯) Via Fluorine Intercalation: A First Principles Study

Epitaxial graphene on SiC(0001): More than just honeycombs

Interface Engineering Of Epitaxial Graphene On Sic(000(1)Over-Bar) Via Fluorine Intercalation: A First Principles Study

Contrasting Transport Performance of Electron- and Hole-Doped Epitaxial Graphene for Quantum Resistance Metrology

Interface engineering of epitaxial graphene on SiC() via fluorine intercalation: A first principles study

Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

High-$T_c$ $d^{0}$ ferromagnetism in a doped Mott insulator: the case of hydrogenated epitaxial graphene on SiC(0001)

Bipolar gating of epitaxial graphene by intercalation of Ge

Low Carrier Density Epitaxial Graphene Devices On SiC

Regulating the Electronic Structure of Freestanding Graphene on SiC by Ge/Sn Intercalation: A Theoretical Study