Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Current Density Enhancement Nano-Contact Phase-Change Memory for Low Writing Current

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Phase-change memory via a phase-changeable self-confined nano-filament

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

Asymmetric Structure with High Electric–thermal Conversion Efficiency for Nanoscale Phase Change Memory Based on Three‐dimensional Simulation

Asymmetric structure with high electric–thermal conversion efficiency for nanoscale phase change memory based on three-dimensional simulation

Some Solutions for Writing Current Reduction and High Density Application of Phase Change Memory

Programming Current Density Reduction for Elevated-Confined Phase Change Memory with a Self-Aligned Oxidation TiWOx Heater

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

RESET Current Reduction for Phase Change Memory Based on Standard 0.13-Μm CMOS Technology

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Ultra-Low Program Current and Multilevel Phase Change Memory for High-Density Storage Achieved by a Low-Current SET Pre-Operation

Scaling Analysis of Nanowire Phase-Change Memory

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Fabrication and Performance Analysis of TiN/W Superlattice Electrodes for Low-Power Phase Change Memory