Abstract:Semiconductor quantum dots (QDs) have unique discrete energy levels determined by the particle size and material. Therefore, they have potential applications as novel optical and electronic devices. Among those, colloidal group II-VI semiconductor quantum dots stand out for their facile synthesis and band gaps aligned with the visible light spectrum. However, the electrical characterization studies of an individual quantum dot necessitate the size of nanogap electrodes being equal to the size of the quantum dot, which has conventionally been evaluated using techniques such as scanning tunneling microscopy (STM) and nanogaps fabricated by electromigration. The complexity of device fabrication has restricted research in this area. Here, we present a pioneering approach for the electrical characterization of single-QD: heteroepitaxial-spherical (HS) Au/Pt nanogap electrodes. We fabricated transistors through chemisorption, an anchoring colloidal CdS QD (3.8 nm) between the HS-Au/Pt nanogap electrodes (gap separation: 4.5 nm). The resulting device functions as a quantum-dot single-electron transistor (QD-SET), showing resonant tunneling-an inherent characteristic of the QD. A steep current increase was observed at a negative voltage, apart from the theoretical single-electron tunneling current by Coulomb blockade phenomena, which agreed with the theoretical resonant tunneling current through a discrete energy level of the QD. This underscores the promise of HS-Au/Pt nanogap electrodes in realizing single-QD devices, offering a pathway toward unlocking their full potential.

Quantized Tunneling Current in the Metallic Nanogaps Formed by Electrodeposition and Etching

Electrochemical Etching-Assisted Fabrication of Quantum Tunneling Sensing Probes with Controlled Nanogap Width

Quantum Transport In Metallic Nanowires Fabricated By Electrochemical Deposition/Dissolution

Electrochemical Fabrication of Atomically Thin Metallic Wires and Electrodes Separated with Molecular-Scale Gaps

Fabrication of Stable Metallic Nanowires with Quantized Conductance

Electrochemical Approach for Fabricating Nanogap Electrodes with Well Controllable Separation

Discrete Tunneling Current Fluctuations In Metal-Water-Metal Tunnel Junctions

Real Time and in Situ Control of the Gap Size of Nanoelectrodes for Molecular Devices

Mechanical modulation of single-electron tunneling through molecular-assembled metallic nanoparticles

Formation of Nanogaps by Nanoscale Cu Electrodeposition and Dissolution

Controlling Electron Transfer through Single Molecules

Finely Tuning Metallic Nanogap Size with Electrodeposition by Utilizing High‐Frequency Impedance in Feedback

Force Modulation of Tunnel Gaps in Metal Oxide Memristive Nanoswitches

Quantized thermal conductance in metallic heterojunctions

Fabricating Atom-Sized Gaps by Field-Aided Atom Migration in Nanoscale Junctions

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

Single-Atom Switches and Single-Atom Gaps Using Stretched Metal Nanowires.

Fractional Conductance Quantization in Metallic Nanoconstrictions under Electrochemical Potential Control

Chemical fabrication of heterometallic nanogaps for molecular transport junctions.

Precise Fabrication of Uniform Molecular Gaps for Active Nanoscale Devices

Single-electron Tunneling Effects in a Metallic Double Dot Device