Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

Ge/Si Quantum Dots Thin Film Solar Cells

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Ge Quantum-Dot Enhanced C-Si Solar Cell for Improved Light Trapping Efficiency

Improved Photovoltaic Properties of Si Quantum Dots/Sic Multilayers-Based Heterojunction Solar Cells by Reducing Tunneling Barrier Thickness

Enhanced Photovoltaic Property by Forming P-I-n Structures Containing Si Quantum Dots/sic Multilayers.

Study on silicon quantum dots sensitized solar cells

Silicon quantum dot/crystalline silicon solar cells

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter‐Dot Coupling and Efficient Passivation

Optical properties of Ge/Si quantum dot superlattices

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications

Si-based Ge Quantum Dot Infrared Photodetectors

Si-Based Ge Quantum Dot Infrared Photodetectors with Si_3N_4 as Anti-Reflection Coating

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors

Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells