Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.

Midinfrared Lead Salt Multi-Quantum-Well Diode-Lasers with 282 K Operation

Continuous-wave, Room Temperature, Low Voltage Green–blue Diode Laser

Gain- and Coulomb-correlated Electron–hole Pairs in Blue-Green Quantum-Well Diode Lasers

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

IV–VI QUANTUM WELLS FOR INFRARED LASERS

Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device

Optically Pumped Mid-Infrared Light Emitter on Silicon

Highly Temperature Insensitive, Deep-Well 4.8 Μm Emitting Quantum Cascade Semiconductor Lasers

Gain and Tuning Characteristics of Mid-Infrared InSb Quantum Dot Diode Lasers

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Thermoelectrically cooled THz quantum cascade laser operating up to 210 K

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers

Optical Pumping Of Iv-Vi Semiconductor Multiple Quantum Well Materials Using A Gasb-Based Laser With Emission At Lambda=2.5 Mu M

High-Performance Bound-to-Continuum Quantum Cascade Lasers at Λ ~ 8 Μm

Elevated Temperature Lasing from Injection Microdisk Lasers on Silicon

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers