Abstract:An In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) light emitting diode (LED) atop high‐quality n+‐InAsyP1‐y metamorphic buffers is developed to achieve short‐wave infrared emission surpassing 2 μm. The resulting InGaAs/InAsPSb MQW LED has superior emission properties, including a nearly constant emission wavelength with increased current injection, high external quantum efficiency, and low efficiency droop. Solid‐state infrared sources designed to emit wavelengths above 2 μm often face challenges in achieving high emission efficiency, minimizing power consumption, and reducing fabrication costs. In response, a 2.4 μm wavelength light emitting diode (LED) is developed using metamorphic In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) heterostructures. The substantial conduction (94 meV) and valence band offsets (300 meV) within this type‐I MQW LED architecture result in strong carrier confinement, improving electron and hole wavefunction overlap. Despite a notable lattice mismatch of 2.0% between the MQWs and InP substrate, the resulting LED wafer exhibits exceptionally low surface roughness (1.1 nm) and well‐defined, sharp interfaces within the heterostructures. Furthermore, this MQW LED exhibits favorable emission properties, including a low turn‐on field, minimal efficiency droop, and stable emission wavelength across varying injection currents. These advancements underscore the potential of such short‐wave infrared emitters for scalable applications in fields such as inspection, optical on‐chip communication, and biomedical diagnostics.

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