Abstract:Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its wide-band gap is a challenge. Hydrogenation is a potential method of altering the electrical properties, although is seldom experimentally measured. Here, the complex permittivity of h-BN after various hydrogen treatments have been investigated. For untreated h-BN, a frequency independent dielectric constant was measured ($\sim4.2 \pm0.2$) and an immeasurably low dielectric loss, demonstrating the ideal dielectric nature of h-BN across the $10^3$ to $10^{10}$ Hz range. However, after atomic H-plasma treatment in a microwave chemical vapour deposition (CVD) reactor, the complex permittivity amplifies dramatically, introducing dielectric dispersion through Debye-type dielectric relaxations ($\varepsilon_{\textrm{s}}\approx20\pm2$, $\varepsilon_{\infty}\approx4.2\pm0.2$) and a percolating long range conductivity ($\sim0.32$ mS/m). Annealing in molecular hydrogen at similar CVD temperatures showed minimal effect. Raman spectroscopy also detected minimal change in all samples, implying the increase is not due to other phases. This leads to the experimental conclusion that hydrogenation, through atomic H-plasma treatment, results in a moderate increase in room temperature electrical conductivity, an associated finite dielectric loss factor. The potential as a tunable wide-band gap semiconductor is highlighted however for insulating dielectric substrate applications, microwave CVD may destroy these desirable properties.

Microhardness Study Of Amorphous Hydrogenated Boron Carbide Deposited On A Cathode Substrate By Plasma Deposition

BN Films Deposited by HFPECVD and the Mechanism of the Process

Superhard Boron-Rich Boron Carbide with Controlled Degree of Crystallinity

Chemical Structure and Micro-Mechanical Properties of Ultra-Thin Films of Boron Carbide Prepared by Pulsed-Laser Deposition

Plasma CVD of hydrogenated boron-carbon thin films from triethylboron

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Raman characterization of boron doped tetrahedral amorphous carbon films

High Entropy Borides Synthesized by the Thermal Reduction of Metal Oxides in a Microwave Plasma

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Impact of Hydrogenation on the Stability and Mechanical Properties of Amorphous Boron Nitride

Boronated Tetrahedral Amorphous Carbon (Ta-C:B)

Highly Tetrahedral Amorphous Carbon Films with Low Stress

Dielectric Barrier Discharge Assisted Chemical Vapor Deposition of Boron Nitride Phosphide Films on A Quartz Substrate

Micro-Hardness and Adhesion of Boron Carbon Nitride Coatings

Synthesis of boron carbide films by ion beam sputtering

Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering

Dielectric spectroscopy of hydrogenated hexagonal boron nitride ceramics

Morphological Transition in Diamond Thin-Films Induced by Boron in a Microwave Plasma Deposition Process

Effect of Boron Coating on Rockwell-C Adhesion and Corrosion Resistance of High Entropy Alloys

Effect of Boron Doping on the Electrical Conduction of Tetrahedral Amorphous Carbon Films

Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study