Abstract:The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD. Properties of these wafers were investigated by ECV and photoluminescence measurements. The influences of thermal annealing on the characteristics of AlGaInP/GaInP multiple quantum wells LED wafers were studied. The AlGaInP/GaInP multiple quantum wells LED wafer for thermal annealing experiments consisted of a 0.5 μm n-GaAs buffer layer with carrier concentration of about 5×10~(17) cm~(-3), a 0.5 μm n-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer with carrier concentration of about 3×10~(17) cm~(-3), a (Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P/Ga_(0.5)In_(0.5)P MQW active region, a 0.5 μm p-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer with carrier concentration of about 6×10~(17) cm~(-3), and a 4.8 μm p-GaP current spreading layer with carrier concentration of about 5×10~(18) cm~(-3). The wafer was split into six pieces. These six pieces were annealed under different temperatures within 460～780 ℃ respectively for 15 min in nitrogen.Compared with as grown samples, the hole carrier concentration of GaP layer in LED wafer increased from 5.6×10~(18) cm~(-3) to 6.5×10~(18) cm~(-3), and the hole carrier concentration of AlGaInP layer increased from 6.0×10~(17) cm~(-3) to 1.1×10~(18) cm~(-3), when wafer was annealed under 460 ℃ for 15 min in nitrogen. The hole carrier concentration of GaP and AlGaInP layers did not obviously change when the annealed temperature was increased to 700 ℃. However, the hole carrier concentration of GaP layer and AlGaInP layer decreased to 8×10~(17) cm~(-3) and 1.7×10~(17) cm~(-3) when wafer was annealed under 780 ℃ for 15 min. And the diffusibility of Mg atoms was enhanced and the undoped AlGaInP/GaInP MQW was p type conductance when the annealing temperature increased to 780 ℃. The peak wavelength and FWHM did not obviously change when the annealing temperature was lower than 780 ℃. However, the PL peak intensity from MQW was about 2 times stronger than that of as grown sample when wafer was annealed under 780 ℃ for 15 min.

Postgrowth Annealing of GaInAs∕GaAs and GaInAsN∕GaAs Quantum Well Samples Placed in a Proximity GaAs Box: A Simple Method to Improve the Crystalline Quality

Annealing Effects on Optical and Structural Properties of 1.3-Μm GaInNAs/GaAs Quantum-Well Samples Capped with Dielectric Layers

Thermal annealing effect on 1.3-μm GaInNAs/GaAs quantum well structures capped with dielectric films

Influence Of Nitride And Oxide Cap Layers Upon The Annealing Of 1.3 Mu M Gainnas/Gaas Quantum Wells

In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Annealing of Self-Assembled InAs/GaAs Quantum Dots: A Stabilizing Effect of Beryllium Doping

Blueshift of In0.2ga0.8n/Gan Single Quantum Well Band Gap Energy by Rapid Thermal Annealing

Suppression of Annealing-Induced in Diffusion in Be-Doped Gainasn/Gaas Quantum Well

Effects of Rapid Thermal Annealing on Self-Assembled InGaAs/GaAs Quantum Dots Superlattice

Rapid Thermal Annealing Effect on Gaasbi/Gaas Single Quantum Wells Grown by Molecular Beam Epitaxy

Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Effects of Growth Temperature on the Structural and Optical Properties of 1.6μm GaInNAs∕GaAs Multiple Quantum Wells

Enhancement AlGaAs/InGaAs Quantum Well Intermixing by the Technology of Cycles Annealing

Influence of Thermal Annealing to the Characteristics of A1GaInP/GaInP Multiple Quantum Wells LED Wafers

Evolution of Inas Quantum Dots During Annealing Process

Spatially Resolved Luminescence Investigation of Algaas/Gaas Single Quantum Wires Modified by Selective Implantation and Annealing

Suppression Of Interfacial Atomic Diffusion In Inganas/Gaas Heterostructures Grown By Molecular-Beam Epitaxy

The Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells Light-Emitting Diode Wafers