Abstract:The integration of oxides with semiconductors is important for the technological advancement of the next generation electronics. Concomitant ferroelectric and antiferromagnetic (AF) behavior is demonstrated in single crystal BiFeO3 (BFO) films grown on 20 nm SrTiO3 (STO) virtual substrates on Si(100) using molecular beam epitaxy (MBE). STO thin films are grown in an oxide MBE chamber by co-deposition of Sr, Ti, and molecular O2. Careful control of the O2 during nucleation produced commensurate growth of STO on Si. The sequence of the steps allows for the suppression of an amorphous SiO2 layer. This STO(20 nm)/Si structure was used as a virtual substrate for MBE deposition of BFO on Si without breaking vacuum. BFO was deposited using Fe and O2 plasma with an overpressure of Bi flux, the growth rate was controlled by the incoming Fe flux. The reflection high energy electron diffraction image shows a 2-D growth front with a 6-fold surface reconstruction under optimized O2 pressure of 5 × 10−8 mbar. Cross-sectional transmission electron microscopy (TEM) confirms the high crystallinity of the films and shows sharp, atomically flat interfaces. The selected area diffraction pattern (SADP) reveals that BFO grows in a distorted rhombohedral crystal structure. X-ray diffraction does not show formation of second phases and is consistent with the TEM and SADP results. The BFO films show AF behavior with a Neel temperature that exceeds 350 K, as expected (TN = 673 K) and with a residual ferromagnetic behavior that decreases with film thickness and is consistent with the G-type AF due to the canted spins. The saturation magnetization per unit volume for a 40 nm thick film was 180 emu/cm3 at an in-plane magnetic field of 8 kOe. The ferroelectric behavior of the films was verified using piezoresponse force microscopy.

Adsorption-Controlled Molecular-Beam Epitaxial Growth Of Bifeo3

Growth and Properties of BiFeO3 Thin Films by Molecular-Beam Epitaxy

Room Temperature Ferroelectric, Ferromagnetic and Magnetoelectric Properties of Ba-Doped Bifeo3 Thin Films

Microstructural and Electrical Characteristics of Epitaxial Bifeo3 Thick Films Sputtered at Different Ar/O-2 Flow Ratios

Magnetic and Structural Properties of BiFeO$_{3}$ Thin Films Grown Epitaxially on SrTiO$_{3}$/Si Substrates

Epitaxial Growth of Perovskite SrBiO$_3$ Film on SrTiO$_3$ by Oxide Molecular Beam Epitaxy

Polar Order Evolutions Near the Rhombohedral to Pseudocubic and Tetragonal to Pseudocubic Phase Boundaries of the Bifeo3-Batio3 System

Multiferroic Orders in 0.5Bifeo3–0.5bi0·5k0·5tio3

Polarization screening-induced epitaxial growth and interfacial magnetism of BiFeO<sub>3</sub>/PbTiO<sub>3</sub>nanoplates

Structural, magnetic, and nanoscale switching properties of BiFeO3 thin films grown by pulsed electron deposition

On the Structure of Α-Bifeo3

Photocatalytic And Magnetic Behaviors Of Bifeo3 Thin Films Deposited On Different Substrates

Growth and Physical Properties of BiFeO3 Thin Films Directly on Si Substrate

Strain-Driven Phase Boundaries in Bifeo3 Thin Films Studied by Atomic Force Microscopy and X-Ray Diffraction

Manipulating the Ferroelectric Domain States and Structural Distortion in Epitaxial BiFeO 3 Ultrathin Films via Bi Nonstoichiometry.

ChemInform Abstract: on the Structure of Α‐bifeo3.

Computer Simulation Of Ferroelectric Domain Structures In Epitaxial Bifeo3 Thin Films

Large bi-axial tensile strain effect in epitaxial BiFeO3 film grown on single crystal PrScO3

Structural study in Highly Compressed BiFeO3 Epitaxial Thin Films on YAlO3

Ferroelectric Size Effects In Multiferroic Bifeo3 Thin Films

BiFeO3 films under tensile epitaxial strain from first principles.