Abstract:This study examines a single wurtzite ZnO/ZnBeO quantum well structure oriented in the polar c-direction. The focus is on investigating the binding energies associated with an impurity donor atom within this system. To achieve this, a self-consistent solution to the Schrödinger and Poisson equations is obtained using the finite difference method. The framework employed involves the effective mass and envelope function approximations. The impurity is represented using a hydrogenic-type wave function, and donor binding energies are determined via a variational approach. The research analyzes the binding energies of the 1s and 2p± states, along with the transition energy between them. These quantities are explored as functions of the well width and Be concentration, considering donor positions at the right and left interfaces as well as at the well's center. Furthermore, the impact of an external magnetic field oriented along the growth direction is assessed, spanning up to 10T , in order to quantify changes in the binding energies. The presence of a built-in electric field induces an asymmetric band profile and a triangular well configuration. This asymmetry results in a loss of symmetry within the binding energy curves. Ultimately, the investigation culminates in the computation of the oscillator strength governing transitions between the donor states. When the donor is situated at the right interface, the energy values remain relatively constant as the well width increases, and the oscillator strength values demonstrate a consistent linear rise.

Binding Energies of Impurity States in Strained Wurtzite Gan/Alxga1-Xn Heterojunctions with Finitely Thick Potential Barriers

Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double quantum wells

Electric fields and valence band offsets at strained [111] heterojunctions

Temperature Effect on Shallow Impurity States in a Wurtzite GaN/Al X Ga 1-X N Core -Shell Nanowire

Impurity Bound Polaron in Wurtzite Gan/Aln Quantum Wells: the Interface Optical-Phonon and the Built-In Electric Field Effects

Surface Polaronic Effect on Donor-Impurity States of a Wurtzite Nitride Nanowire: Two-parameter Variational Approach

Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect

Binding energies of hydrogenic impurities in lateral surface superlattice quantum well wires

Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Binding energies of shallow donors in polar ZnO/ZnBeO quantum well

Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface

Hydrogenic Impurity States in the Quantum-Well Wires with Lateral Surface-Structures

Effects of strain and hydrostatic pressure on exciton properties in asymmetric zinc-blende (In,Ga)N/GaN coupled double quantum wells

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch

Electronic and Optical Properties of Unstrained and Strained Wurtzite Gan

Binding energies of bound polaron in a wurtzite nitride nanowire: Contributions of IO and QC phonon modes

Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Electronic and Optical Properties of Strained Wurtzite Gan