Abstract:This study investigates the shape complexity of hydrogenic impurity states in the Ga 1 − χ Al χ N semiconductor quantum well for the first time. The shape complexity is calculated for a specific hydrogenic impurity state in both position and momentum spaces ( C [ r ] and C [ p ]) through the utilization of Shannon entropy and averaging electron probability density. The results demonstrate that the Shannon entropy and the average electron probability density vary monotonically with the quantum well width. However, the shape complexity exhibits extreme points, and their physical source is discussed in detail. Furthermore, the impact of doping Al element on the shape complexity of the hydrogenic impurity in the Ga 1 − χ Al χ N quantum well is examined. The investigation demonstrates that the changes in C [ r ] or C [ p ] with the quantum well width exhibit similarity for different contents of the doping Al element, indicating a scaled invariance of shape complexity under translation. However, for a fixed width of the quantum well, the shape complexity of hydrogenic impurity state in the Ga 1 − χ Al χ N quantum well is highly sensitively to the Al element content. As the shape complexity plays a crucial role in quantifying the disorder of a quantum system, our findings indicate that we can control the internal disorder of hydrogenic impurity in the semiconductor quantum well by adjusting the well size and doping element content. Our study provides some theoretical guidance for the study of the internal disorder of hydrogenic impurity in semiconductor quantum well and has certain applications in semiconductor material manufacturing and synthesis.

Hydrogenic Impurity States in the Quantum-Well Wires with Lateral Surface-Structures

Binding energies of hydrogenic impurities in lateral surface superlattice quantum well wires

Electronic States in Lateral-Surface-Superlattice Quantum-Well Wires

Energy Minigaps in the Quantum Well Wires with Periodical Lateral Surface Structures

Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch

Energy Minigaps in the Quantum Wires with Lateral Surface Structures

Electronic States in Quantum Wells with Interface Defects

Binding Energies of Impurity States in Strained Wurtzite Gan/Alxga1-Xn Heterojunctions with Finitely Thick Potential Barriers

Effect of A Finite-Width Barrier on Binding-Energy in Modulation-Doped Quantum-Well Structures

Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double quantum wells

Stark Shift Of Hydrogenic Impurity States In A Quantum-Well

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Electronic and hole minibands in quantum wire arrays of different crystallographic structure

Electronic states in GaAs/AlAs lateral-surface superlattices

Donor Impurity States on Structured Semiconductor Interfaces.

Colloidal GaAs quantum wires: solution-liquid-solid synthesis and quantum-confinement studies.

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

[Energy Levels of Hydrogenic Impurities in InAs Quantum Ring].

The shape complexity of hydrogenic impurity state in the Ga1 − χAlχN semiconductor quantum well

GaAs delta-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov de Haas oscillations

Correlating electronic transport to atomic structures in self-assembled quantum wires.