Abstract:Sb thin films have attracted wide interests due to their tunable band structure, topological phases, and remarkable electronic properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence of their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb$_2$ flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (104) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1-10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection high-energy electron diffraction patterns, surface morphology, and transport properties. Our DFT calculations show that the anisotropic features originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm that the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi$_{1-x}$Sb$_x$ thin films with similar lattice parameters and an identical crystal structure as well as functional heterostructures of them with III-V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.

Nucleation of Gasb on Gaas (001) by Low Pressure Metal-Organic Chemical Vapor Deposition

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Alternative Microstructure of GaN Nucleation Layers Grown by Low Pressure Metal-Organic Vapor Phase Epitaxy on Sapphire Substrate

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

Research On Lt Gasb Buffer Layerduring Gasb Growth On Gaas Sustrate By Mbe

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Structural Anisotropy in Sb Thin Films

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Sn-doped β-Ga2O3 thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source

Growth and nitridation of β-Ga 2 O 3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process