Volatile resistive switching characteristics of molecular beam epitaxy grown HfO 2 thin films
Taranga Dehury,Sandeep Kumar,Sabine Pütter,Suman Roy,Satyaprakash Sahoo,Chandana Rath
DOI: https://doi.org/10.1016/j.apsusc.2024.162060
IF: 6.7
2024-12-15
Applied Surface Science
Abstract:In this work, we have explored the structure, morphology and resistive switching aspects of molecular beam epitaxy grown HfO 2 thin films fabricated on highly doped p-type Si substrate at substrate temperatures of 300 and 500 °C. Both films correspond to the monoclinic phase ( P2 1 /c ) of HfO 2 and exhibit single crystalline structure with a preferred orientation along ( 1 ̄11 ). The density of the HfO 2 layer is found to be 9.1 and 9.2 g/cm 3 , whereas the root mean square roughness is 1.3 and 2.4 nm in the films grown at 300 and 500 °C, respectively. Both films have an average grain size of ∼ 140 nm. These HfO 2 films demonstrate forming free volatile resistive switching behavior with SET voltage of −3.1 and −3.6 V, along with the ON/OFF ratio of ∼ 2 and ∼ 4 for the films deposited at substrate temperatures of 300 and 500 °C, respectively. For the films grown at 300 °C and 500 °C, the retention time is found to be 20 and 30 s, respectively. Memory device based on HfO 2 film with higher substrate temperature exhibits a better ON/OFF ratio due to higher crystallinity and the availability of more oxygen vacancies. A comprehensive mechanism of resistive switching is also discussed in this article, considering the transport of oxygen vacancies and the electromigration of Ag ions.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films