Abstract:ZnO has excellent electrical properties such as high conductivity (σ) and Seebeck coefficient (S) that are important for its thermoelectric properties and have provided the basis for obtaining improved ZnO-based thermoelectric materials by doping. In particular, the most representative Al-doped ZnO (AZO) has excellent thermoelectric performance. Although the Al doping is beneficial for reducing the lattice thermal conductivity of ZnO, the solubility of Al2O3 in ZnO is limited and excessive doping of Al gives rise to the generation of a large amount of the ZnAl2O4 secondary phase that limits the further improvement of the electrical properties. Thus, it is crucial to develop approaches to reduce thermal conductivity while still maintaining high electrical properties. In this work, high pressure and high temperature (HPHT) synthesis was used to adjust the ZnO optical band gap by modifying the lattice parameters of ZnO, and thereby improving the electrical properties of the sample. It was found that the optimal doping content for the samples synthesized at high pressure is different from that of the samples synthesized at normal pressure, providing a new approach for the further improvement of the thermoelectric properties of ZnO. Additionally, high pressure can promote grain refinement that is conducive to the generation of the multi-scale hierarchical structure of the sample that introduces a variety of phonon scattering mechanisms to reduce the thermal conductivity while maintaining a high power factor. The Zn0.96Al0.04O material obtained by sintering at a pressure of 3 GPa and a temperature of 1053 K for 30 min reached the highest power factor (7.8 µW cm−1 K−2) and the highest zT (0.16) at 973 K.

High Dielectric Constant in Al-doped ZnO Ceramics Using High-Pressure Treated Powders

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

High Pressure Treated Zno Ceramics Towards Giant Dielectric Constants

Effect of Powder Size on the Microstructure and Dielectric Properties of Zno Ceramics

Influence of Al2O3 Doping on the Microstructure and Current–Voltage Characteristics of ZnO-Based Linear Resistance Ceramics

Effects of Al doping on the optical and electrical properties of pre-synthesized ZnO powders by solid state method

Preparation and thermoelectric properties of Al2O 3-doped ZnO ceramics

High Permittivity in Zr Doped NiO Ceramics

Microstructure and thermoelectric properties of Al-doped ZnO ceramic prepared by spark plasma sintering

Effect of ZnO on structural and dielectric properties of AlN ceramics

Preparation and Thermoelectric Properties of Al<sub>2</sub>O<sub>3</sub>-Doped ZnO Ceramics

Microstructure and thermoelectric properties of α-and γ-Al2O3 doped ZnO under high pressure

Optimization of thermoelectric properties of Al-doped Zn1−xAlxO under high pressure and high temperature

Preparation and Characterization of Aluminum Doped ZnO

Preparation And Properties For Aluminum-Doped Zinc Oxide Powders With The Coprecipitation Method

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

Microstructure and thermoelectric properties of Zn1−xAlxO ceramics fabricated by spark plasma sintering

Impedance Spectroscopy and Dielectric Properties of BaAl(2−2)(Zn0.5Ti0.5)2O4 Ceramics

Highly Conductive Al-doped Tetra-Needle-like ZnO Whiskers Prepared by a Solid State Method

Modification of MgAl<sub>2</sub>O<sub>4</sub> Microwave Dielectric Ceramics by Zn Substitution

Al-Doping Effects on Structure, Electrical and Optical Properties of C-Axis-Orientated Zno : Al Thin Films