Structural, Optical and Electrical Properties of Hf-doped ZnO Transparent Conducting Films Prepared by Sol–gel Method

Fenggui Wang,Xiaoru Zhao,Libing Duan,Yajun Wang,Hongru Niu,Amjed Ali
DOI: https://doi.org/10.1016/j.jallcom.2014.10.117
IF: 6.2
2014-01-01
Journal of Alloys and Compounds
Abstract:Hafnium doped zinc oxide (HZO) thin films with various Hf contents ( 0, 1, 3, 5, 7 at.%) at different solution concentrations (0.15-0.75 mol/L) were deposited on the glass substrates using sol-gel method. The structural, optical and electrical properties were investigated by means of XRD, PL and Hall-effect measurement. The results show that Hf ions could substitute Zn ions effectively and improve the crystallinity of ZnO significantly with highly preferred c-axis orientation. Based on photoluminescence and transmittance measurements, the strong ultraviolet emission band exhibits a blue shift and its intensity is found to rise with the increasing of Hf-doping density. Furthermore, the resistivity shows a bell curve and the minimum value is 5.6 x 10(3) Omega cm for the HZO film with 3 at.% Hf, which is lower than that of the typical Al-doped ZnO thin films using sol-gel method. (C) 2014 Elsevier B.V. All rights reserved.
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